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FJE5304D
NPN Triple Diffused Planar Silicon Transistor
High Voltage High Speed Power Switch Application
• Wide Safe Operating Area
• Built-in Free Wheeling diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
Equivalent Circuit
C
B
FJE5304D NPN Triple Diffused Planar Silicon Transistor
1
1.Emitter 2.Collector 3.Base
Absolute Maximum Ratings
TO-126
E
TC = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
I
BP
P
C
T
STG
* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%
Electrical Characteristics
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 12 V
Collector Current (DC) 4 A
* Collector Current (Pulse) 8 A
Base Current (DC) 2 A
* Base Current (Pulse) 4 A
Collector Dissipation (TC=25°C) 30 W
Storage Temperature - 65 ~ 150 °C
TC = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
BV
BV
I
CES
I
CEO
I
EBO
h
CBO
CEO
EBO
FE
Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V
Collector Cut-off Current VCE = 700V, VEB = 0 100 µA
Collector Cut-off Current VCE = 400V, IB = 0 250 µA
Emitter Cut-off Current VEB = 12V, IC = 0 100 µA
DC Current Gain VCE = 5V, IC = 10mA
= 5V, IC = 2A
V
CE
10
840
©2005 Fairchild Semiconductor Corporation
FJE5304D Rev. B1
1
www.fairchildsemi.com
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FJE5304D NPN Triple Diffused Planar Silicon Transistor
Electrical Characteristics
(Continued) TC = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A
I
= 1A, IB = 0.2A
C
I
= 2.5A, IB = 0.5A
C
V
(sat) Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A
BE
V
f
Inductive Load Switching (V
t
stg
Internal Diode Forward Voltage Drop IF = 2A 2.5 V
= 200V)
CC
Storage Time IC = 2A, IB1 = 0.4A
tf Fall Time 0.1
Resistive Load Switching (V
t
stg
Storage Time IC = 2A, IB1 = IB2 = 0.4A
= 250V)
CC
tf Fall Time 0.2
* Pulse test : PW ≤ 300µs, Duty cycle ≤ 2%
Thermal Characteristics
TC = 25°C unless otherwise noted
I
= 1A, IB = 0.2A
C
= 2.5A, IB = 0.5A
I
C
(off) = -5V,
V
BE
L = 200µH
= 30µs
T
P
0.6 µs
0.7
1.0
1.5
1.1
1.2
1.3
2.9 µs
Symbol Parameter Max. Units
R
θJC
R
θJA
Thermal Resistance, Junction to Case 4.17 °C/W
Thermal Resistance, Junction to Ambient 83.3 °C/W
V
V
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FJE5304D FJE5304D TO-126 -- -- --
FJE5304D Rev. B1
2
www.fairchildsemi.com
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Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
5
4
3
2
100
IB = 500mA
IB = 450mA
IB = 400mA
IB = 350mA
IB = 300mA
IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA
Ta=125oC
o
C
25
o
C
-25
10
IB = 50mA
[A], COLLECTOR CURRENT
1
C
I
0
012345678910
VCE[V], COLLECTOR-EMITTER VOLTAGE
IB = 0
,DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC[A] , COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage
10
Ic=5I
B
O
C
25
10
Vce=5V
Ic=5I
FJE5304D NPN Triple Diffused Planar Silicon Transistor
B
1
Ta=125OC
O
-25
0.1
(sat)[V],SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 1 0
C
IC[A] , COLLECTOR CURRENT
1
[V],SATURATION VOLTAGE
BE
V
0.1
0.01 0. 1 1 10
O
C
-25
25OC
Ta=125
O
C
IC[A], COLLECTOR CURRENT
Figure 5. Resitive Load Switching Time Figure 6. Inductive Load Switching Time
10
1
s], TIME
µ
[
F
, t
STG
0.1
t
0.01
0.1 1 10
VCC = 250V
I
= 5IB1 = -5I
C
t
STG
t
F
1000
B2
100
[ns], TIME
F
, t
STG
t
V
= 200V,
Clamp
V
=-5V, RBB=0 Ohm,
BE(OFF)
L=200 uH, I
10
0.1 1 10
C
= 5I
B1
t
STG
t
F
FJE5304D Rev. B1
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
3
www.fairchildsemi.com
Page 4
Typical Performance Characteristics
Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area
100
TC=25oC
10
1µs
100
10
10µs
1
DC
1ms
1
Vcc=50V,
I
=1A, IB2 = -1A
B1
L = 1mH
FJE5304D NPN Triple Diffused Planar Silicon Transistor
0.1
[A], COLLECTOR CURRENT
C
I
0.01
10 100 1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1
[A], COLLECTOR CURRENT
C
I
0.01
10 100 1000 10000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Power Derating
50
40
30
20
10
[W], POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
FJE5304D Rev. B1
4
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Mechanical Dimensions
FJE5304D NPN Triple Diffused Planar Silicon Transistor
TO-126
ø3.20
0.75
1.60
0.75
2.28TYP
[2.28±0.20]
±0.10
3.90
±0.10
±0.10
±0.10
±0.10
8.00
#1
±0.30
2.28TYP
[2.28±0.20]
14.20MAX
±0.30
13.06
±0.20
11.00
(1.00)
±0.20
16.10
0.50
3.25
(0.50)
1.75
+0.10
–0.05
±0.20
±0.20
FJE5304D Rev. B1
Dimensions in Millimeters
5
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FJE5304D NPN Triple Diffused Planar Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
6
FJE5304D Rev. B1
Rev. I16
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