Datasheet fjd5555 Datasheet

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FJD5555 NPN Silicon Transistor

Features

• High Voltage Switch Mode Application

• Fast Speed Switching

• Wide Safe Operating Area

• Suitable for Electronic Ballast Application

FJD5555 — NPN Silicon Transistor

May 2010

DPAK

Absolute Maximum Ratings* T

1. Base 2. Collector 3. Emitter

=25°C unless otherwise noted

Marking : J5555

Symbol Parameter Value Units

CBO

CEO

EBO

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics T

Collector-Base Voltage 1050 V

Collector-Emitter Voltage 400 V

Emitter-Base Voltage 14 V

Collector Current (DC) 5 A

Collector Current (Pulse) 10 A

Base Current (DC) 2 A

Collector Current (Pulse) 4 A

Collector Dissipation 1.34 W

Junction Temperature 150 °C

Storage Junction Temperature Range - 55 to 150 °C

=25°C unless otherwise noted

Symbol Parameter Value Units

θja

* Device mounted on minimum pad size

Thermal Resistance, Junction to Ambient 95 °C/W

Package Marking and Ordering Information

Part Number Marking Package Packing Method Remarks

FJD5555TM J5555 D-PAK Tape & Reel

FJD5555 Rev. A3 1

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FJD5555 — NPN Silicon Transistor

Electrical Characteristics* T

=25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max. Units

CBO

CEO

EBO

(sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.2A 0.17 0.5 V

(sat) Base-Emitter Saturation Voltage IC=3.5A, IB=1.0A 1.2 V

STG

EAS Avalanche Energy L=2mH

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Collector-Base Breakdown Voltage IC=500µA, IE=0 1050 V

Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 V

Emitter-Base Breakdown Voltage IE=500µA, IC=0 14 V

DC Current Gain VCE=5V, IC=10mA 10

=3V, IC=0.8A 20 40

=3.5A, IB=1.0A 1.5 V

Output Capacitance VCB=10V, f=1MHz 45 pF

Turn On Time VCC=125V, IC=0.5A

=45mA, IB2=-0.5A

Storage Time 1.2 µs

Fall Time 0.3 µs

=250Ω

Turn On Time VCC=250V, IC=2.5A

=0.5A, IB2=-1.0A

Storage Time 2.5 µs

Fall Time 0.3 µs

=100Ω

1.0 µs

2.0 µs

FJD5555 Rev. A3 2

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Typical Characteristics

FJD5555 — NPN Silicon Transistor

Ta = - 25oC

Ta = 125oC

Ta = 25oC

Ta = 75oC

100

, DC CURRENT GAIN

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

Figure 1. DC Current Gain Figure 2. Saturation Voltage

IC = 5 I

Ta = - 25oC

Ta = 125oC

Ta = 25oC

Ta = 75oC

VCE = 5V

1000

IC = 5 I

Ta = 125oC

Ta = 75oC

Ta = 25oC

100

(sat) [mV], SATURATION VOLTAGE

0.01 0. 1 1 10

IC [A], COLLECTOR CURRENT

1000

STG

100

Ta = - 25oC

[ns], SWITCHING TIME

& t

VCC=125V

STG

(sat) [V], SATURATION VOLTAGE

0.1

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

=45mA, IB2=0.5A

0.1 1

IC [A], COLLECTOR CURRENT

Figure 3. Saturation Voltage Figure 4. Resistive Load Switching

10000

STG

1000

100

[ns], SWITCHING TIME

& t

VCC=250V

STG

=0.5A, IB2=1.0A

0.1 1 10

IC [A], COLLECTOR CURRENT

1.5

1.2

0.9

0.6

0.3

[W], POWER DISSIPATION

0.0 0 25 50 75 100 125 150 175

Tc[oC], CASE TEMPERATURE

Figure 5. Resistive Load Switching Figure 6. Power Derating

FJD5555 Rev. A3 3

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Typical Characteristics (Continued)

FJD5555 — NPN Silicon Transistor

[A], COLLECTOR CURRENT

200 300 400 500 600 700 800 900 1000 1100 1200

-5V

VCE[V], COLLECTOR-EMITTER VOLTAGE

Vcc = 50V VBE(off) = -5V LC = 1mH Ic = 4 Ib

Vcc = 50V VBE(off) = -5V

LC = 1mH

[V], COLLECTOR-EMITTER VOLTAGE

012345678910

Ic = 3.3 Ib

ICE[A], COLLECTOR CURRENT

Ic = 5 Ib

Ic = 4 Ib

Figure 7. Reverse Bias Safe Operating Figure 8. RBSOA Saturation

Ic = 2.2 Ib

FJD5555 Rev. A3 4

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Physical Dimensions

FJD5555 — NPN Silicon Transistor

D-PAK

Dimensions in Millimeters

FJD5555 Rev. A3 5

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Pr oduct Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I49