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FJD5553
NPN Silicon Transistor
High Voltage Switch Mode Application
• Fast Speed Switching
• Wide Safe Operating Area
• Suitable for Electronic Ballast Application
FJD5553 — NPN Silicon Tr ansistor
April 2008
DPAK
Marking : J5553
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings * T
1
=25°C unless otherwise noted
C
Symbol Parameter Value Units
BV
CBO
BV
CEO
BV
EBO
I
C
I
CP
I
B
I
BP
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T
Collector-Base Voltage 1050 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 14 V
Collector Current (DC) 3 A
Collector Current (Pulse) 6 A
Base Current (DC) 1 A
Collector Current (Pulse) 2 A
Collector Dissipation 1.25 W
Junction Temperature 150 °C
Storage Junction Temperature Range - 55 ~ 150 °C
=25°C unless otherwise noted
a
Symbol Parameter Value Units
R
θJA
* Device mounted on minimum pad size
Thermal Resistance, Junction to Ambient 100 °C/W
Ordering Information
Part Number Marking Package Packing Method Remarks
FJD5553TM J5553 D-PAK Tape & Reel
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD5553 Rev. A1 1
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FJD5553 — NPN Silicon Tr ansistor
Electrical Characteristics * T
=25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
BV
CBO
BV
CEO
BV
EBO
h
FE
VCE(sat) Collector-Emitter Saturation Voltage IC=1A, IB=0.2A 0.23 0.5 V
VBE(sat) Base-Emitter Saturation Voltage IC=1A, IB=0.2A 1.2 V
C
ob
t
ON
t
STG
t
F
t
ON
t
STG
t
F
EAS Avalanche Energy L= 2mH
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdown Voltage IC=500µA, IE=0 1050 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 V
Emitter-Base Breakdown Voltage IE=500µA, IC=0 14 V
* DC Current Gain V
=5V, IC=10mA 10
CE
VCE=3V, IC=0.4A 30 60
Output Capacitance VCB=10V, f=1MHz 45 pF
Turn On Time VCC=125V, IC=0.5A
Storage Time 1.2 µs
IB1=45mA, IB2=0.5A
RL=250Ω
1.0 µs
Fall Time 0.3 µs
Turn On Time VCC=250V, IC=2.5A
Storage Time 2.5 µs
IB1=0.5A, IB2=1.0A
RL=100Ω
2.0 µs
Fall Time 0.3 µs
3.5
mJ
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD5553 Rev. A1 2
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Typical Characteristics
FJD5553 — NPN Silicon Tr ansistor
Ta = 75oC
Ta = - 25oC
Ta = 125oC
Ta = 25oC
100
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
IC [A], COLLECTOR CURRENT
VCE = 5V
1000
IC = 5 I
B
100
(sat) [mV], SATURATION VOLTAGE
CE
V
0.01 0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 1. DC Current Gain Figure 2. Saturation Voltage
IC = 5 I
B
1
Ta = - 25oC
(sat) [V], SATURATION VOLTAGE
BE
V
0.1
0.01 0.1 1 10
Ta = 25oC
Ta = 75oC
Ta = 125oC
IC [A], COLLECTOR CURRENT
1000
100
[ns], SWITCHING TIME
F
& t
VCC=125V
STG
t
I
=45mA, IB2=0.5A
B1
10
0.1 1
IC [A], COLLECTOR CURRENT
Ta = 75oC
Ta = 125oC
t
t
Ta = - 25oC
Ta = 25oC
STG
F
Figure 3. Saturation Voltage Figure 4. Resistive Load Switchin g
10000
t
STG
1000
t
100
[ns], SWITCHING TIME
F
& t
VCC=250V
STG
t
I
=0.5A, IB2=1.0A
B1
10
0.1 1 10
F
IC [A], COLLECTOR CURRENT
1.5
1.2
0.9
0.6
0.3
[W], POWER DISSIPATION
C
P
0.0
0 25 50 75 100 125 150 175
Tc[oC], CASE TEMPERATURE
Figure 5. Resistive Load Switching Figure 6. Power Derating
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD5553 Rev. A1 3
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Mechanical Dimensions
FJD5553 — NPN Silicon Tr ansistor
D-PAK
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD5553 Rev. A1 4
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FJD5553 NPN Silicon TransistorFJD5553
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAK E CHANGES WITHOUT FURTHER NOTICE TO ANY PRO DUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY AR ISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to per form can be re asonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
provided in the labeling, can be reas onably expected to result
in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains f inal specifications. Fairchild Semiconducto r reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for ref erence information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD5553 Rev. A1 5
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