Datasheet fjd5304d Datasheet

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Page 1

FJD5304D High Voltage Fast Switching Transistor

Features

• Built-in Free Wheeling Diode

• Wide Safe Operating Area

• Small Variance in Storage Time

• Suitable for Electronic Ballast Application

Equivalent Circuit

FJD5304D — High Voltage Fast Switching Transistor

July 2010

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings T

D-PAK

= 25°C unless otherwise noted

Symbol Parameter Value Units

CBO

CEO

EBO

STG

* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed

Collector-Base Voltage 700 V

Collector-Emitter Voltage 400 V

Emitter-Base Voltage 12 V

Collector Current (DC) 4 A

* Collector Current (Pulse) 8 A

Base Current (DC) 2 A

* Base Current (Pulse) 4 A

Collector Dissipation Tc = 25°C

= 25°C

1.25

Junction Temperature 150 °C

Storage Temperature -55 to 150 °C

W W

Thermal Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Value Units

θja

** Device mounted on minimum pad size.

FJD5304D Rev. A1 1

Thermal Resistance Junction-Ambient ** 99 °C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

J5304D FJD5304DTM D-PAK 13” Dia - 2500

J5304D FJD5304DTF D-PAK 13” Dia - 2000

FJD5304D — High Voltage Fast Switching Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max. Units

CES

CEO

EBO

CE(sat)

BE(sat)

STG

Collector-Base Breakdown Voltage IC = 1mA, IE = 0 700 V

CBO

Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V

CEO

Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 12 V

EBO

Collector Cut-off Current VCB = 700V, IE = 0 100 µA

Collector Cut-off Current VCB = 400V, IB = 0 250 µA

Emitter Cut-off Current VEB = 12V, IC = 0 1 mA

DC Current Gain VCE = 5V, IC = 10mA

= 5V, IC = 2.0A

840

Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 0.7 V

= 1.0A, IB = 0.2A 1.0 V

= 2.5A, IB = 0.5A 1.5 V

Base-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A 1.1 V

= 1.0A, IB = 0.2A 1.2 V

= 2.5A, IB = 0.5A 1.3 V

Storage Time

Fall Time 0.1 µs

Storage Time

Fall Time 0.2 µs

Diode Forward Voltage IF = 2A 2.5 V

V I

=200V, IC=2.0A,

CLAMP

=0.4A, VBE(off)=-5V, L=200µH

=250V, IC=2.0A,

IB1=0.4A, IB2=-0.4A, TP=30µs

0.6 µs

2.9 µs

FJD5304D Rev. A1 2

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Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

FJD5304D — High Voltage Fast Switching Transistor

4.0

3.5

3.0

2.5

2.0

1.5

1.0

[A], COLLECTOR CURRENT

0.5

0.0 024681012

IB=300mA

IB=150mA

IB=100mA

IB=50mA

VCE [V]. COLLECTOR-EMITTER VOLTAGE

100

TC=125oC

TC= - 25oC

, DC CURRENT GAIN

0.01 0.1 1 10

TC=25oC

IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage

IC = 5 I

TC=125oC

TC=25oC

0.1

(sat) [V], SATURATION VOLTAGE

0.01

0.01 0.1 1 10

IC [A], COLLECTOR CURRENT

TC= - 25oC

TC=125oC

(sat) [V], SATURATION VOLTAGE

0.1

0.01 0.1 1 10

TC=25oC

IC [A], COLLECTOR CURRENT

IC = 5 I

Figure 5. Resistive Load Switching Time Figure 6. Forward Biased Safe Operating Area

STG

0.1

[µs], SWITCHING TIME

& t

STG

VCC=250V

= 5 IB1= - 5 I

0.01

0.1 1 10

IC [A], COLLECTOR CURRENT

FJD5304D Rev. A1 3

100

Pulse I

DC I

C_MAX

TC = 25oC

C_MAX

1ms

0.1

[A], COLLECTOR CURRENT

Single Pulse

0.01 1 10 100 1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

10µs

1µs

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Typical Performance Characteristics (Continued)

Figure 7. Reverse Biased Safe Operating Area Figure 8. Power Derating Curve

[A], COLLECTOR CURRENT

0 100 200 300 400 500 600 700 800 900 1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

Vcc=50V, L = 1mH I

=1A, IB2 = -1A

[W], COLLECTOR POWER DISSIPATION

0 25 50 75 100 125 150

TC [oC], CASE TEMPERATURE

FJD5304D — High Voltage Fast Switching Transistor

FJD5304D Rev. A1 4

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Mechanical Dimensions

FJD5304D — High Voltage Fast Switching Transistor

D-PAK

Dimensions in Millimeters

FJD5304D Rev. A1 5

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I49