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FJD3305H1
NPN Silicon Transistor
High Voltage Switch Mode Application
• Fast Speed Switching
• Wide Safe Operating Area
• Suitable for Electronic Ballast Application
FJD3305H1 — NPN Silicon Transistor
April 2009
DPAK
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings * T
1
=25°C unless otherwise noted
C
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T
Collector-Base Voltage 700 V
Collector-Emitter Voltage 400 V
Emitter-Base Voltage 9 V
Collector Current (DC) 4 A
Collector Current (Pulse) 8 A
Base Current 2 A
Collector Dissipation, Ta = 25°C
Tc = 25°C
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
=25°C unless otherwise noted
a
1.1
50
Symbol Parameter Value Units
R
θJA
R
θJC
* Device mounted on minimum pad size
Thermal Resistance, Junction to Ambient 110 °C/W
Thermal Resistance, Junction to Case 2.0 °C/W
W
W
Ordering Information
Part Number Marking Package Packing Method Remarks
FJD3305H1TM J3305H1 D-PAK Tape & Reel
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD3305H1 Rev.A 1
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FJD3305H1 — NPN Silicon Transistor
Electrical Characteristics * T
=25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
ON
t
STG
t
F
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
Collector-Base Breakdwon Voltage IC = 500µA, IE = 0 700 V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 400 V
Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 9 V
Collector Cut-off Current VCB = 700V, IE = 0 1 µA
Emitter Cut-off Current VEB = 9V, IC = 0 1 µA
DC Current Gain * VCE = 5V, IC = 1A
VCE = 5V, IC = 2A
Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
IC = 4A, IB = 1A
Base-Emitter Saturation Voltage IC = 1A, IB = 0.2A
IC = 2A, IB = 0.5A
19
8
40
0.5
0.6
1.0
1.2
1.6
28
Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
Output Capacitance VCB = 10V, f = 1MHz 65 pF
Turn On Time VCC = 125V, IC = 2A
Storage Time 4.0 µs
Fall Time 0.9 µs
IB1 = -IB2 = 0.4A
RL = 62.5Ω
0.8 µs
V
V
V
V
V
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD3305H1 Rev. A 2
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Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
[A], COLLECTOR CURRENT
C
I
0.5
0.0
012345678910
IB = 300mA
IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA
IB = 50mA
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector- Emitter Saturation Voltage Figure 4. Base - EmitterSaturation Voltage
10
IC = 4 I
B
Ta = 125 OC
1
Ta = 75 OC
0.1
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
IC [A], COLLECTOR CURRENT
Ta = - 25 OC
Ta = 25 OC
100
VCE = 5V
Ta = 75 OC
Ta = - 25 OC
10
, DC CURRENT GAIN
FE
h
1
0.01 0.1 1 10
Ta = 125 OC
Ta = 25 OC
IC [A], COLLECTOR CUTRRENT
10
IC = 4 I
B
1
Ta = 125 OC
(sat) [V], SATURATION VOLTAGE
BE
V
0.1
0.01 0.1 1 10
Ta = 25 OC
Ta = 75 OC
Ta = - 25 OC
IC [A], COLLECTOR CURRENT
FJD3305H1 — NPN Silicon Transistor
Figure 5. Switching Time Figure 6. Capacitance
10000
t
[µs], SWITCHING TIME
STG
& t
F
t
1000
100
STG
t
Ta = 25 OC
F
IB1 = - IB2 = 0.4A
VCC = 125V
IC [A], COLLECTOR CURRENT
1000
Ta = 125 OC
100
CAPACITA NCE[pF]
10
1
C
ib
1
1 10 100
REVERSE VOLTAGE[V]
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD3305H1 Rev. A 3
F=1MHz
C
ob
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Figure 7. Reverse Biased Safe Operating Area Figure 8. RBSOA Collector- Emitter Saturation
Voltage
FJD3305H1 — NPN Silicon Transistor
10
8
6
4
V
V
V
V
BE(OFF)
BE(OFF)
BE(OFF)
BE(OFF)
=-9V
=-7V
=-5V
=-3V
VCC=50V, LC=1mH
=5, IB2=-1.0A
I
C/IB
2
=0.7 O hms
R
BB
[A], COLLECTOR CURRENT
C
I
0
0 100 200 300 400 500 600 700 800
V
[V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 9. RBSOA Turn-on Pulse Width vs
Collector Current
200
VCC=50V, LC=1mH
V
=-5V, IB2=-1.0A
BE(OFF)
160
RBB=0.7 Ohms
120
80
Turn-on PW [uS]
40
Ic/Ib = 5
Ic/Ib = 4
Ic/Ib = 3
10
VCC=50V, LC=1mH
8
V
6
=-5V, IB2=-1.0A
BE(OFF)
RBB=0.7 Ohms
Ic/Ib = 5
Ic/Ib = 4
4
2
(sat) [V], SATURATION VOLTAGE
CE
V
0
12345678
Ic/Ib = 3
IC [A], COLLECTOR CURRENT
Figure 10. Power Derating
[W], POWER DISSIPATION
C
P
60
50
40
30
20
10
0
12345678
IC [A], COLLECTOR CURRENT
0
0 25 50 75 100 125 150 175
Tc[oC], CASE TEMPERATURE
Figure 11. RBSOA Test Circuit
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD3305H1 Rev. A 4
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Mechanical Dimensions
FJD3305H1 — NPN Silicon Transistor
D-PAK
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD3305H1 Rev. A 5
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FJD3305H1 NPN Silicon TransistorFJD3305H1
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FJD3305H1 Rev. A 6
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