Page 1
FJC790
PNP Epitaxial Silicon Transistor
Camera Strobe Flash Application
• Complement to FJC690
• High Collector Current
• Low Collector-Emitter Saturation Voltage
1
1. Base 2. Collector 3. Emitter
SOT-89
Marking
79 0
YWW
Weekly code
Year code
h
FE
FJC790 PNP Epitaxial Silicon Transistor
July 2007
Absolute Maximum Ratings * T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics * T
Collector-Base Voltage -50 V
Collector-Emitter Voltage -40 V
Emitter-Base Voltage -5 V
Collector Current (DC) -2 A
Power Dissipation 0.5 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
h
FE
VCE(sat) Collector-Emitter Saturation Voltage IC = -0.5A, IB = -5mA
VBE(sat) Base-Emitter Saturation Voltage IC = -1A, IB = -10mA -0.9 V
VBE(on) Base-Emitter On Voltage VCE = -2V, IC = 1A -0.8 V
C
OB
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Collector-Base Breakdown Voltage IC = -100μA, IE = 0 -50 V
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0 -40 V
Emitter-Base Breakdown Voltage IE = -100μA, IC = 0 -5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
= -35V, VB = 0 -0.1 μA
CE
= -4V, IC = 0 -0.1 μA
EB
= -2V, IC = -10mA
CE
V
= -2V, IC = -500mA
CE
V
= -2V, IC = -1A
CE
V
= -2V, IC = -2A
CE
300
250
200
150
800
-250
Collector Output Capacitance V
IC = -1A, IB = -10mA
IC = -2A, IB = -50mA
= -10V, IE = 0, f = 1MHz 20 pF
CB
-350
-450
mV
mV
mV
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJC790 Rev. D
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
790 FJC790 SOT-89 13” -- 4,000
FJC790 PNP Epitaxial Silicon Transistor
FJC790 Rev. D
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. DC current Gain Figure 2. Collector-Base Capacita nce
FJC790 PNP Epitaxial Silicon Transistor
1000
125oC
75oC
800
600
400
hfe, Current Gain
200
-25oC
25oC
0
-1 -10 -100 -1000
Collector C u rr e n t, [mA]
Vce=-2V
100
[pF], Capacitance
Ob
C
10
-1 -10 -100
VCB[V], C ollector-Base Voltage
VCB=-10V
f = 1 M H z
I
= 0
E
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
-100
Ic=10 * Ib
125oC
-80
-60
-40
-20
Vce(sat), Saturation Voltage,[mV]
-0
-1 -10 -100 -1000
75oC
-25oC
Collector Current, [m A]
25oC
-700
-600
-500
-400
-300
-200
-100
Vce(sat), Saturation Voltage,[mV]
-0
-10 -100 -1000
Ic=10 0 * Ib
25oC
-25oC
Collector C u rr e n t, [mA]
125oC
75oC
Figure 5. Base-Emitter Saturation Voltage Figure 6. Base-Emitter Turn on Voltage
-1000
-800
-600
-400
Vbe(sat), Saturation Voltage,[mV]
FJC790 Rev. D
Ic=100 * Ib
-25oC
25oC
75oC
-10 -100 -1000
125oC
Collector Current, [mA]
3 www.fairchildsemi.com
-1000
VCE= -2V
25oC
-800
-600
-400
Vbe(on), Turn on Voltage,[mV]
-10 -100 -1000
75oC
Collector Current, [mA]
-25oC
125oC
Page 4
Typical Performance Characteristics
Figure 7. Power Dissipation vs
Ambient Temperature
0.6
0.4
0.2
- Power Dissipation (W)
D
P
0.0
0 25 50 75 100 125 150
Temperature, [ OC]
FJC790 PNP Epitaxial Silicon Transistor
FJC790 Rev. D
4 www.fairchildsemi.com
Page 5
Mechanical Dimensions
)
1.50
FJC790 PNP Epitaxial Silicon Transistor
SOT-89
0.50
4.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.20
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
±0.20
(0.40
+0.10
–0.05
FJC790 Rev. D
Dimensions in Millimeters
5 www.fairchildsemi.com
Page 6
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
®
ACEx
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
Fairchild
®
®
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
FastvCore™
FPS™
®
FRFET
Global Power Resource
®
SM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
PDP-SPM™
Power220
®
®
®
Power247
POWEREDGE
Power-SPM™
PowerTrench
Programmable Active Droop™
QFET
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIA BILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CO NVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
®
®
®
®
SuperSOT™-8
SyncFET™
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
®
®
TINYOPTO™
TinyPower™
®
TinyPWM™
TinyWire™
µSerDes™
®
UHC
UniFET™
VCX™
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the bo dy, or
(b) support or sustain life, and (c ) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
Obsolete Not In Production
ued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I30
Loading...