Page 1
FJC690
NPN Epitaxial Silicon Transistor
Camera Strobe Flash Application
• Complement to FJC790
• High Collector Current
• Low Collector-Emitter Saturation Voltage
1
1. Base 2. Collector 3. Emitter
SOT-89
Marking
69 0
YWW
Weekly code
Year code
h
FE
FJC690 NPN Epitaxial Silicon Transistor
July 2007
Absolute Maximum Ratings T
= 25°C unless otherwise noted
a
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics T
Collector-Base Voltage 45 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 5 V
Collector Current (DC) 2 A
Power Dissipation 0.5 W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
= 25°C unless otherwise noted
a
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CEO
I
EBO
h
FE
VCE(sat) Collector-Emitter Saturation Voltage IC = 0.1A, IB = 0.5mA
VBE(sat) Base-Emitter Saturation Voltage IC = 1A, IB = 10mA 0.9 V
VBE(on) Base-Emitter On Voltage VCE = 2V, IC = 1A 0.85 V
C
OB
Collector-Base Breakdown Voltage IC = 100μA, IE = 0 45 V
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 45 V
Emitter-Base Breakdown Voltage IE = 100μA, IC = 0 5 V
Collector Cut-off Current V
Emitter Cut-off Current V
DC Current Gain V
= 35V, VB = 0 0.1 μA
CE
= 4V, IC = 0 0.1 μA
EB
= 2V, IC = 100mA
CE
V
= 2V, IC = 1mA
CE
V
= 2V, IC = 2mA
CE
500
400
150
80
Collector Output Capacitance V
IC = 1A, IB = 5mA
= 10V, IE = 0, f = 1MHz 20 pF
CB
300
mV
mV
©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJC690 Rev. D
Page 2
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
690 FJC690 SOT-89 13” -- 4,000
FJC690 NPN Epitaxial Silicon Transistor
FJC690 Rev. D
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
FJC690 NPN Epitaxial Silicon Transistor
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Ta=1250C
1000
Ta=250C
100
, DC CURRENT GAIN
FE
h
10
0.01 0.1 1 10
IC[A], COLLECTOR CURRENT
Ta=-400C
VCE=2V
IC=20I
B
1
0.1
(SAT)[V], SATURATION VOLTAGE
CE
V
0.01
0.01 0.1 1 10
Ta=1250C
Ta=250C
Ta=-400C
IC[A], COLLECTOR CURRENT
Figure 3. Power Dissipation vs
Ambient Temperature
0.6
0.4
0.2
- Power Dissipation (W)
D
P
0.0
0 25 50 75 100 125 150
Temperature, [ OC]
FJC690 Rev. D
3 www.fairchildsemi.com
Page 4
Mechanical Dimensions
)
1.50
FJC690 NPN Epitaxial Silicon Transistor
SOT-89
0.50
4.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.20
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
±0.20
(0.40
+0.10
–0.05
FJC690 Rev. D
Dimensions in Millimeters
4 www.fairchildsemi.com
Page 5
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Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
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Rev. I30
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