Page 1
FJC2383
NPN Epitaxial Silicon Transistor
Color TV Audio Output & Color TV Vertical Deflection Output
Marking
23 83
PY WW
1
1. Base 2. Collector 3. Emitter
SOT-89
Weekly code
Year cod e
hFE grage
FJC2383 NPN Epitaxial Silicon Transistor
July 2005
Absolute Maximum Ratings
Ta = 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
J
T
STG
Electrical Characteristics
Collector-Base Voltage 160 V
Collector-Emitter Voltage 160 V
Emitter-Base Voltage 6 V
Collector Current 1 A
Base Current 0.5 A
Collector Power Dissipation 500 mW
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C
Ta = 25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
I
EBO
BV
CEO
h
FE
V
CE
V
(on) Base-Emitter On Voltage V
BE
f
T
C
ob
Collector Cut-off Current V
Emitter Cut-off Current V
= 150V, IE = 0
CB
= 6V, IC = 0 1 µA
EB
1 µA
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 160 V
DC Current Gain V
= 5V, IC = 200mA 100 320
CE
(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA 1.5 V
= 5V, IC = 5mA 0.45 0.75 V
CE
Current Gain Bandwidth Product V
Output Capacitance V
= 5V, IC = 200mA 20 100 MHz
CE
= 10V, IE = 0, f = 1MHz 20 pF
CB
©2005 Fairchild Semiconductor Corporation
FJC2383 Rev. B
1
www.fairchildsemi.com
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hFE Classification
Classification O Y
h
FE
100 ~ 200 160 ~ 320
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
2383 FJC2383 SOT-89 13” -- 4,000
FJC2383 NPN Epitaxial Silicon Transistor
FJC2383 Rev. B
2
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Page 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
1.4
1.2
IB = 15mA
1.0
EMITTER COMMON
Ta=25oC
IB = 10mA
IB = 6mA
0.8
0.6
0.4
Ic[mA], COLLECTOR CURRENT
0.2
IB = 4mA
IB = 3mA
IB = 2.5mA
IB = 2mA
IB = 1.5mA
IB = 1mA
1000
100
10
, DC CURRENT GAIN
FE
h
IB = 0.5mA
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VCE[V], COLLECTOR-EMITTER VOLTAGE
1
10 100 1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage
1.0
EMITTER COMMON
IC/IB=10
0.8
1
EMITTER COMMON
VCE=10V
VCE=5V
EMITTER COMMON
Ta = 25oC
FJC2383 NPN Epitaxial Silicon Transistor
0.6
0.4
0.2
[A], COLLECTOR CURRENT
C
I
0.0
0.0 0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
0.1
0.01
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
V
1E-3
1 10 100 1000
IC[mA], COLLECTOR CURRENT
IC/IB=10
IC/IB=5
Figure 5. Base-Emitter On Voltage Figure 6. Collectro Output Capacitance
[A], COLLECTOR CURRENT
C
I
1.0
0.8
0.6
0.4
0.2
EMITTER COMMON
IC/IB=10
1000
100
10
[pF], CAPACITANCE
ob
C
EMITTER COMMON
f = 1MHz
Ta = 25oC
0.0
FJC2383 Rev. B
0.0 0.2 0.4 0.6 0.8 1.0
VBE[V], BASE-EMITTER VOLTAGE
1
1 10 100 1000
VCB[V], COLLECTOR BASE VOLTAGE
3
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Page 4
FJC2383 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 7. Current Gain Bandwidth Product
1000
100
10
1
1 10 100 1000
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
T
f
IC[mA], COLLECTOR CURRENT
EMITTER COMMON
Ta = 25oC
(Continued)
FJC2383 Rev. B
4
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Page 5
Mechanical Dimensions
4.50
±0.20
SOT-89
1.50
FJC2383 NPN Epitaxial Silicon Transistor
±0.20
0.50
1.65
±0.10
1.50 TYP 1.50 TYP
±0.10
C0.2
0.40
±0.10
(0.50)
±0.20
2.50
(1.10)
±0.20
4.10
0.40
(0.40)
+0.10
–0.05
FJC2383 Rev. B
Dimensions in Millimeters
5
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Page 6
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ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FJC2383 NPN Epitaxial Silicon Transistor
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
6
FJC2383 Rev. B
Rev. I16
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