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FJB102
High Voltage Power Darlington Transistor
Features
• High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
• Low Collector-Emitter Saturation Voltage
• High Collector-Emitter Sustaining Voltage
• Monolithic Construction with Built-in Base-Emitter Shunt Resistors
• Industrial Use
FJB102 High Voltage Power Darlington Transistor
Equivalent Circuit
C
B
1
1.Base 2.Collector 3.Emitter
D2-PAK
R1 10kΩ≅
R2 0.6kΩ≅
R1
R2
E
Absolute Maximum Ratings
Symbol Parameter Value Units
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Collector-Base Voltage 100 V
Collector-Emitter Voltage 100 V
Emitter-Base Voltage 5 V
Collector Current (DC) 8 A
* Collector Current (Pulse) 15 A
Base Current (DC) 1 A
Collector Dissipation (TC = 25°C) 80 W
Junction Temperature 150 °C
Storage Temperature -65 ~ 150 °C
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FJB102 FJB102 D2-PAK 13” Dia - 800
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FJB102 Rev. A
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FJB102 High Voltage Power Darlington Transistor
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
BV
BV
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(ON)
C
ob
CEO(sus)
EBO
Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V
Emitter-Base Breakdown Voltage IE = 500µA, IC = 0 10 V
Collector Cut-off Current VCB = 100V, IE = 0 50 µA
Collector Cut-off Current VCE = 50V, IE = 0 50 µA
Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
DC Current Gain VCE = 4V, IC = 3A
V
= 4V, IC = 8A
CE
1000
200
20000
Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA 2.0 V
= 8A, IB = 80mA 2.5 V
I
C
Base-Emitter Saturation Voltage VCE = 4V, IC = 8A 2.8 V
Output Capatitance VE = 10V, IE = 0, f = 1MHz 200 pF
FJB102 Rev. A
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
Figure 1. Static Characterstic Figure 2. DC Current Gain
FJB102 High Voltage Power Darlington Transistor
5
4
3
2
1
[A], COLLECTOR CURRENT
C
I
0
IB = 1mA
012345
IB = 300µA
IB = 200µA
IB = 100µA
VCE[V], COLLECTOR-EMITTER VOLTAGE
10k
1k
, DC CURRENT GAIN
FE
h
100
0.1 1 10
IC[A], COLLECTOR CURRENT
Figure 3. Saturation Voltage Figure 4. Collector Output Capacitance
10k
VBE(sat)
1k
(sat)[V], SATURATION VOLTAGE
CE
(sat), V
BE
100
V
0.1 1 10 100
VCE(sat)
IC[A], COLLECTOR CURRENT
IC = 500 I
10k
B
1k
100
[pF], CAPACITANCE
10
ob
C
1
0.1 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
IE=0, f=1MHz
VCE = 4V
Figure 5. Forward Biased Safe Operating
FJB102 Rev. A
Area
100
10
DC
1
0.1
[A], COLLECTOR CURRENT
C
I
0.01
0.1 1 10 100
VCE[V], COLLECTOR-EMIT TER VOLTAGE
5ms
1ms
100µs
Figure 6. Power Derating
120
100
80
60
40
20
[W], COLLECTOR POWER DISSIPATION
C
0
P
0 25 50 75 100 125 150 175
TC[oC], CASE TEMPERATURE
3 www.fairchildsemi.com
Page 4
Mechanical Dimensions
1
FJB102 High Voltage Power Darlington Transistor
D2-PAK
9.90
±0.20
(0.40)
1.40 ±0.20
.27 ±0.10
2.54 TYP 2.54 TYP
10.00 ±0.20
0.80 ±0.10
1.20 ±0.20
9.20 ±0.20
4.90 ±0.20
15.30 ±0.30
15.30 ±0.30
(1.75)
2.00 ±0.10
(0.75)
4.50 ±0.20
10.00 ±0.20
(8.00)
(4.40)
(2XR0.45)
+0.10
1.30
–0.05
0.10 ±0.15
2.40 ±0.20
0°~3°
+0.10
0.50
–0.05
2.54 ±0.30
(7.20)
9.20 ±0.20
4.90 ±0.20
0.80 ±0.10
Dimensions in Millimeters
4 www.fairchildsemi.com
FJB102 Rev. A
Page 5
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Rev. I16
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