Datasheet FJAF6910 Datasheet (Fairchild Semiconductor)

FJAF6910

High Voltage Color Display Horizontal
Deflection Output

• High Collector-Base Breakdown Voltage : BV

• Low Saturation Voltage : V

• High Switching Speed : t

(sat) = 3V (Max.)

CE

(typ.) =0.15µs

F

• For Color Monitor

NPN Triple Diffused Planar Silicon Transistor

CBO

= 1700V

1

TO-3PF

1.Base 2.Collector 3.Emitter

FJAF6910

Absolute Maximum Ratings

TC=25°C unless otherwise noted

Symbol Parameter Rating Units

V

CBO

V

CEO

V

EBO

I

C

* Collector Current (Pulse) 20 A

I

CP

P

C

T

J

T

STG

* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%

Electrical Characteristics

Collector-Base Voltage 1700 V
Collector-Emitter Voltage 800 V
Emitter-Base Voltage 6 V
Collector Current (DC) 10 A

Collector Power Dissipation 60 W
Junction Temperature 150 °C
Storage Temperature -55 ~ 150 °C

TC=25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

I

CES

I

CBO

I

EBO

BV

CBO

BV

CEO

BV

EBO

h

FE1

h

FE2

(sat) Collector-Emitter Saturation Voltage IC=6A, IB=1.5A 3 V

V

CE

(sat) Base-E mitter Saturat ion Voltage IC=6A, IB=1.5A 1.5 V

V

BE

* Storage Time VCC=200V, IC=6A, RL=33

t

STG

* Fall Time 0.3 µs

t

F

* Pulse Test: PW=20µs, duty Cycle=1% Pulsed

Collector Cut-off Current VCB=1400V, RBE=0 1 mA
Collector Cut-off Current VCB=800V, IE=0 10 µA
Emitter Cut-off Current VEB=4V, IC=0 1 mA
Collector-Base Breakdown Voltage IC=500µA, IE=0 1700 V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0 800 V
Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V
DC Current Gain VCE=5V, IC=1A

=5V, IC=6A

V

CE

10

710

Ω

4 µs

IB1=1.2A, IB2= - 2.4A

Thermal Characteristics

TC=25°C unless otherwise noted

Symbol Parameter Typ Max Units

R

θjC

©2001 Fairchild Semiconductor Corporation Rev. A, July 2001

Thermal Resistance, Junction to Case 2.08 °C/W

Typical Characteristics

FJAF6910

10

8

6

4

2

[A], COLLECTOR CURRENT

C

I

0

02468101214

IB = 2.0A

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. DC current Gain

Ta = 125oC

Ta = 25oC

Ta = - 25oC

100m

10

IC = 5 I

B

1

IB = 0.6A

IB = 0.4A

IB = 0.2A

100

VCE = 5V

Ta = 125oC

10

, DC CURRENT GAIN

FE

h

Ta = - 25oC

1

0.1 1 10

Ta = 25oC

IC [A], COLLECTOR CURRENT

10

1

100m

Ta = 25oC

IC = 3 I

Ta = 125oC

Ta = - 25oC

B

(sat) [V], SATURATION VOLTAGE

CE

V

10m

0.1 1 10

IC [A], COLLECTOR CURRENT

(sat) [V], SATURATION VOLTAGE

CE

V

10m

0.1 1 10

IC [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

16

VCE = 5V

14

12

10

8

6

4

[A], COLLECTOR CURRENT

C

I

2

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

25oC

125oC

VBE [V], BASE-EMITTER VOLTAGE

- 25oC

10

1

s], SWITCHING TIME

0.1

µ

[

F

& t

STG

t

0.01
110

IB2 [A], REVERSE BASE CURRENT

VCC = 200V,

= 6A, IB1 = 1.2A

I

C

t

STG

t

F

Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time

©2001 Fairchild Semiconductor Corporation

Rev. A, July 2001

FJAF6910

Typical Characteristics

VCC = 200V,

10

I

= 6A, IB2 = - 2.4A

C

t

STG

1

s], SWITCHING TIME

µ

0.1

[

F

& t

STG

t

0.01

IB1 [A], FORWARD BASE CURRENT

Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time

30

25

20

t

F

110

RB2 = 0, IB1 = 15A
V

= 30V, L = 200µH

CC

(Continued)

10

1

s], SWITCHING TIME

0.1

µ

[

F

& t

STG

t

0.01
110

t

STG

t

F

VCC = 200V,

= 1.2A, IB2 = - 2.4A

I

B1

IC [A], COLLECTOR CURRENT

100

IC (Pulse)

t = 100ms

10

IC (DC)

t = 10ms

t = 1ms

15

10

[A], COLLECTOR CURRENT

5

C

I

1

10 100 1000 10000

VBE(off) = - 3V

VCE [V], COLLECTOR-EMITTER VOLTAGE

VBE(off) = - 6V

1

0.1

[A], COLLECTOR CURRENT

C

I

TC = 25oC
Single Pulse

0.01
1 10 100 1000 10000

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area

80

70

60

50

40

30

20

10

[W], COLLECTOR POWER DISSIPATION

C

P

0

0 25 50 75 100 125 150 175

TC [oC], CASE TEMPERATURE

Figure 11. Power Dera ting

©2001 Fairchild Semiconductor Corporation

Rev. A, July 2001

Package Demensions

±0.20

4.50

15.50

TO-3PF

±0.20

ø3.60

±0.20

±0.20

10.00

10°

5.50

3.00
(1.50)

FJAF6910

±0.20

±0.20

±0.20

26.50

±0.20

14.80

±0.20

±0.20

14.50

16.50

2.00

2.00

4.00

0.75

5.45TYP

[5.45

±0.20

3.30

±0.20
±0.20

±0.20

+0.20
–0.10

±0.30

±0.20

2.00

]

±0.20

2.00

2.00

5.45TYP

[5.45

±0.20

2.50

±0.20

±0.30

±0.20

5.50

]

0.85

±0.20

16.50

±0.03

0.90

±0.20

1.50

2.00

3.30

+0.20
–0.10

±0.20

±0.20

±0.20

23.00

±0.20

22.00

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A, July 2001

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A

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2

E

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STAR*POWER is used under license

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®

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®

QFET™
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QT Optoelectronics™
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STAR*POWER™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:

1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

©2001 Fairchild Semiconductor Corporation Rev. H3

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.