Datasheet FJAF6815 Datasheet (Fairchild Semiconductor)

Page 1
FJAF6815
High Voltage Color Display Horizontal Deflection Output
• High Collector-Base Breakdown Voltage : BV
• Low Saturation Voltage : V
(sat) = 3V (Max.)
CE
• For Color Monitor
CBO
= 1500V
FJAF6815
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Rating Units
V
CBO
V
CEO
V
EBO
I
C
* Collector Current (Pulse) 25 A
I
CP
P
C
T
J
T
STG
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Collector-Base Voltage 1500 V Collector-Emitter Voltage 750 V Emitter-Base Voltage 6 V Collector Current (DC) 15 A
Collector Dissipation 60 W Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Conditions Min Typ Max Units
I
CES
I
CBO
I
EBO
BV
CBO
BV
CEO
BV
EBO
h
FE1
h
FE2
(sat) Collector-Emitter Saturation Voltage IC=10A, IB=2.5A 3 V
V
CE
(sat) Base-Emitter Saturation Voltage IC=10A, IB=2.5A 1.5 V
V
BE
* Storage Time VCC=200V, IC=8A, RL=25
t
STG
*Fall Time 0.2 µs
t
F
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
Collector Cut-off Current VCB=1400V, RBE=0 1 mA Collector Cut-off Current VCB=800V, IE=0 10 µA Emitter Cut-off Current VEB=4V, IC=0 1 mA Collector-Base Breakdown Voltage IC=500µA, IE=0 1500 V Collector-Emitter Breakdown Voltage IC=5mA, IB=0 750 V Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V DC Current Gain VCE=5V, IC=1A
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
=5V, IC=10A
V
CE
IB1=1.6A, IB2= - 3.2A
10
58
Ω
3 µs
Thermal Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Typ Max Units
R
θjC
©2001 Fairchild Semiconductor Corporation Rev. A, May 2001
Thermal Resistance, Junction to Case 2.08 °C/W
Page 2
Typical Characteristics
FJAF6815
12
10
8
6
4
2
[A], COLLECTOR CURRENT
C
I
0
024681012
IB=2.0A
VCE [V], COLLECTOR-EMITTER VOLTAGE
IB=0.6A
IB=0.4A
IB=0.2A
100
Ta = 125oC
10
Ta = - 25oC
, DC CURRENT GAIN
FE
h
1
0.1 1 10 100
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristics Figure 2. DC Current Gain
10
IC = 3 I
B
Ta = 125oC Ta = 25oC Ta = - 25oC
1
0.1
10
IC = 5 I
B
1
Ta = 25oC
0.1
VCE = 5V
Ta = 25oC
Ta = 125oC
Ta = - 25oC
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10 100
IC [A], COLLECTOR CURRENT
(sat) [V], SATURATION VOLTAGE
CE
V
0.01
0.1 1 10 100
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage
16
VCE = 5V
14
12
10
8
6
4
[A], COLLECTOR CURRENT
C
I
2
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
125oC
25oC
VBE [V], BASE-EMITTER VOLTAGE
- 25oC
10
1
0.1
[µs], SWITCHING TIME
F
& t
STG
t
0.01
0.1 1 10
IB2 [A], REVERSE BASE CURRENT
VCC = 200V,
= 8A, IB1 = 1.6A
I
C
t
STG
t
F
Figure 5. Base-Emitter On Voltage Figure 6. Resistive Load Switching Time
©2001 Fairchild Semiconductor Corporation Rev. A, May 2001
Page 3
FJAF6815
Typical Characteristics
t = 10ms
t
STG
t
F
VCC = 200V,
= 8A, IB2 = - 3.2A
I
C
t = 1ms
100
10
1
[µs], SWITCHING TIME
F
0.1
& t
STG
t
0.01
0.1 1 10
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time
100
10
IC (Pulse)
IC (DC)
t = 100ms
(Continued)
10
1
s], SWITCHING TIME
µ
[
F
& t
STG
0.1
t
110
VCC = 200V,
= 1.6A, IB2 = - 3.2A
I
B1
t
STG
t
F
IC [A], COLLECTOR CURRENT
40
30
RB2 = 0, IB1 = 15A
= 30V, L = 200µH
V
CC
1
0.1
IC [A], COLLECTOR CURRENT
TC = 25oC Single Pulse
0.01 1 10 100 1000 10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
20
10
[A], COLLECTOR CURRENT
C
I
1
10 100 1000 10000
VBE(off) = -6V
VBE(off) = -3V
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 9. Forward Bias Safe Operating Area Figure 10. Reverse Bias Safe Operating Area
80
60
40
20
[W], POWER DISSIPATION
C
P
0
0 2 5 50 75 100 125 150 175
TC [OC], CASE TEMPERATURE
Figure 11. Power Dera ting
©2001 Fairchild Semiconductor Corporation Rev. A, May 2001
Page 4
Package Demensions
±0.20
4.50
15.50
TO-3PF
±0.20
ø3.60
±0.20
±0.20
10.00
10°
5.50
3.00 (1.50)
FJAF6815
±0.20
±0.20
±0.20
26.50
±0.20
14.80
±0.20
±0.20
14.50
16.50
2.00
2.00
4.00
0.75
5.45TYP
[5.45
±0.20
3.30
±0.20 ±0.20
±0.20
+0.20 –0.10
±0.30
±0.20
2.00
]
±0.20
2.00
2.00
5.45TYP
[5.45
±0.20
2.50
±0.20
±0.30
±0.20
5.50
]
0.85
±0.20
16.50
±0.03
0.90
±0.20
1.50
2.00
3.30
+0.20 –0.10
±0.20
±0.20
±0.20
23.00
±0.20
22.00
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation Rev. A, May 2001
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™
2
E
CMOS™ EnSigna™ FACT™ FACT Quiet Series™
®
FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™
OPTOPLANAR™ PACMAN
™
POP™ PowerTrench
®
QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ Stealth™
SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™
®
®
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2001 Fairchild Semiconductor Corporation Rev. H2
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Semiconductor reserves the right to make changes at any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
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