Datasheet FJAF6812 Datasheet (Fairchild Semiconductor)

FJAF6812

High Voltage Color Display Horizontal Deflection Output

• High Collector-Base Breakdown Voltage : BV

• High Switching Speed : t

(typ.) =0.1µs

F

• For Color Monitor

CBO

= 1500V

FJAF6812

1

TO-3PF

1.Base 2.Collector 3.Emitter

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Rating Units

V

CBO

V

CEO

V

EBO

I

C

* Collector Current (Pulse) 24 A

I

CP

P

C

T

J

T

STG

* Pulse Test: PW=300µs, duty Cycle=2% Pulsed

Collector-Base Voltage 1500 V Collector-Emitter Voltage 750 V Emitter-Base Voltage 6 V Collector Current (DC) 12 A

Collector Dissipation 60 W Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C

Electrical Characteristics

Symbol Parameter Test Conditions Min Typ Max Units

I

CES

I

CBO

I

EBO

BV

EBO

h

FE1

h

FE2

(sat) Collector-Emitter Saturation Voltage IC=8A, IB=2A 3 V

V

CE

(sat) Base-Emitter Saturation Voltage IC=8A, IB=2A 1.5 V

V

BE

* Storage Time VCC=200V, IC=7A, RL=30

t

STG

*Fall Time 0.2 µs

t

F

* Pulse Test: PW=20µs, duty Cycle=1% Pulsed

Collector Cut-off Current VCB=1400V, RBE=0 1 mA Collector Cut-off Current VCB=800V, IE=0 10 µA Emitter Cut-off Current VEB=4V, IC=0 1 mA Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 V DC Current Gain VCE=5V, IC=1A

TC=25°C unless otherwise noted

=5V, IC=8A

V

CE

IB1= 1.4A, IB2= - 2.8A

10

5

Ω

40

8

3 µs

Thermal Characteristics

TC=25°C unless otherwise noted

Symbol Parameter Typ Max Units

R

θjC

Thermal Resistance, Junction to Case 1.4 2.08 °C/W

Typical Characteristics

FJAF6812

11

Ib=1.8A

10

9

8

7

6

5

4

3

2

[A], COLLECTOR CURRENT

C

I

1

0

0 2 4 6 8 10 12 14

Ib=1.6A

VCE [V], COLLECTOR-EMITTER VOLTAGE

Ib=1.4A

Ib=1.2A

Ib=1.0A Ib=800mA

Ib=600mA Ib=400mA

Ib=200mA

100

125oC 75oC

25oCTa= - 25oC

10

, DC CURRENT GAIN

FE

h

1

0.1 1 10

IC [A], COLLECTOR CURRENT

Figure 1. Static Characteristics Figure 2. DC Current Gain

100

10

125oC

1

0.1

(sat) [V], SATURATION VO LT AG E

CE

V

0.01

0.1 1 10

75oC

IC [A], COLLECTOR CURRENT

IC = 5I

25oC

Ta = - 25oC

B

100

10

1

0.1

(sat) [V], SATURATION VOLTAGE

CE

V

0.01

0.1 1 10

IC [A], COLLECTOR CURRENT

VCE = 5V

IC = 3I

B

125oC

75oC

25oC

Ta = - 25oC

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

14

12

10

8

6

4

[A], COLLECTOR CURRENT

C

I

2

75oC

125oC

25oC

Ta = - 25oC

0

0.0 0.5 1.0 1.5

VBE [V], BASE-EMITTER VOLTAGE

VCE = 5V

10

1

s], FALL TIME

0.1

µ

s], STORAGE TIME

[

µ

F

t

[

STG

t

RESISTIVE LOAD Vcc = 200V IC = 7A IB1 = 1.4A

0.01

-0.1 -1 -10

IB2 [A], REVERSE BASE CURRENT

t

STG

t

F

Figure 5. Base-Emitter On Voltage Figure 6. Switching Time

FJAF6812

Typical Characteristics

100

IC (Pulsed)

1ms

10

IC (DC)

1

0.1

[A], COLLECTOR CURRENT

C

I

0.01 1 10 100 1000

10ms

VCE [V], COLLECTOR- EM IT TE R VOLTAGE

(Continued)

TC = 25 oC Single Pulse

300µs

5000

30

10

IB1 = 1.2A, IB2 = - 4A

[A], COLLECTOR CURRENT

VBE(off) = - 3V

C

I

L = 200µH Single Pulse

1

10 100 1000

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area

80

70

60

50

40

30

20

[W], POWER DISSIPA T ION

C

P

10

0

0 25 50 75 100 125 150 175

TC [oC], CASE TEMPERATURE

5000

Figure 9. Power Derat ing

Package Demensions

±0.20

4.50

15.50

TO-3PF

±0.20

ø3.60

±0.20

10.00

10°

5.50

3.00 (1.50)

FJAF6812

±0.20

26.50

±0.20

14.80

±0.20

14.50

16.50

2.00

4.00

0.75

5.45TYP

[5.45

±0.20

3.30

±0.20 ±0.20

±0.20

+0.20 –0.10

±0.30

±0.20

2.00

]

±0.20

2.00

5.45TYP

[5.45

±0.20

2.50

±0.20

±0.30

±0.20

5.50

]

0.85

±0.20

16.50

±0.03

0.90

±0.20

1.50

2.00

3.30

+0.20 –0.10

±0.20

23.00

±0.20

22.00

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™

2

E

CMOS™ EnSigna™ FACT™ FACT Quiet Series™

®

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

OPTOPLANAR™ PACMAN

™

POP™ PowerTrench

®

QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER SMART START™ Stealth™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™

®

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.