Page 1
Audio Power Amplifier
• High Current Capability : IC=10A
• High Power Dissipation
•Wide S.O.A
• Complement to FJAF4210
FJAF4310
FJAF4310
1
TO-3PF
1.Base 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Symbol Parameter Value Units
V
V
V
I
I
P
R
T
T
CBO
CEO
EBO
C
B
C
θJC
J
STG
Collector-Base Voltage 200 V
Collector-Emitter Voltage 140 V
Emitter-Base Voltage 6 V
Collector Current (DC) 10 A
Base Current (DC) 1.5 A
Collector Dissipation (TC=25°C) 80 W
Junction to Case 1.48 °C/W
Junction Temperature 150 °C
Storage Temperature - 55 ~ 150 °C
Electrical Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
(sat) Collector-Emitter Saturation Voltage IC=5A, IB=0.5A 0.5 V
V
CE
C
ob
f
T
* Pulse Test : PW=20µs
Collector-Base Breakdown Voltage IC=5mA, IE=0 200 V
Collector-Emitter Breakdown Voltage IC=50mA, RBE=∞ 140 V
Emitter-Base Breakdown Voltage IE=5mA, IC=0 6 V
Collector Cut-off Current VCB=200V, IE=0 10 µA
Emitter Cut-off Cu rr en t VEB=6V, IC=0 10 µA
*
DC Current Gain VCE=4V, IC=3A 50 180
Output Capacitance VCB=10V, f=1MHz 250 pF
Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz
TC=25°C unless otherwise noted
TC=25°C unless otherwise noted
hFE Classification
Classification R O Y
h
FE
©2002 Fairchild Semiconductor Corporation Rev. A, November 2002
50 ~ 100 70 ~ 140 90 ~ 180
Page 2
Typical Characteristics
IB = 300mA
10
IB = 400mA
9
8
7
6
5
4
3
2
[A], COLLECTOR CURRENT
C
I
1
0
01234
VCE [V], COLLECTOR-EMITTER VOL T AG E
Figure 1. Static Characterstic Figure 2. DC current Gain
IB = 250mA
IB = 200mA
IB = 150mA
IB = 100mA
IB = 50mA
IB = 20mA
1000
Ta = 125 oC
100
Ta = - 25 oC
, DC CURRENT G AIN
FE
h
10
0.1 1 10
Ta = 25 oC
IC [A], COLLECTOR CURRENT
FJAF4310
VCE = 4 V
3.0
2.5
2.0
1.5
1.0
0.5
(sat) [V], SATURATION VOLTAGE
CE
V
0.0
0.0 0.4 0.8 1.2 1.6 2.0
IC= - 5A
IB [A], BASE CURRENT
Figure 3. V
10
(sat) vs. IB Characteristics Figure 4. Collector-Emitter Saturation Voltage
CE
VCE = 4 V
8
6
4
Ta = 25 oC
IC= - 10A
1
IC = 10 I
B
Ta = 125 oC
0.1
(sat) [V], SATURAT IO N VOLTAGE
CE
V
0.01
0.01 0.1 1 10
Ta = 25 oC
IC [A], COLLECTOR CURRENT
I
(Pulse)
C
10
I
(DC)
C
1
t=100ms
Ta = - 25 oC
t=10ms
2
[A], COLLECTOR CURRENT
C
I
0
Ta = 125 oC
0.0 0.5 1.0 1.5
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage Figure 6. Forward Bias Safe Operating Area
©2002 Fairchild Semiconductor Corporation
Ta = - 25 oC
Ic [A], COLLECTOR CURRENT
0.1
℃℃℃℃
T
=25
C
Single Pulse
0.1 1 10 100
VCE [V], COLLECTOR-EMITTER VOLTAGE
Rev. A, November 2002
Page 3
FJAF4310
Typical Characteristics
100
80
60
40
20
[W], COLLECTOR POWER DISSIPATION
C
P
0
0 25 50 75 100 125 150 175
TC[℃], CASE TEMPERATURE
Figure 7. Power Derating
(Continued)
©2002 Fairchild Semiconductor Corporation
Rev. A, November 2002
Page 4
Package Dimensions
±0.20
4.50
15.50
TO-3PF
±0.20
ø3.60
±0.20
±0.20
10.00
10°
5.50
3.00
(1.50)
FJAF4310
±0.20
±0.20
±0.20
26.50
±0.20
14.80
±0.20
±0.20
14.50
16.50
2.00
2.00
4.00
0.75
5.45TYP
[5.45
±0.20
3.30
±0.20
±0.20
±0.20
+0.20
–0.10
±0.30
±0.20
2.00
]
±0.20
2.00
2.00
5.45TYP
[5.45
±0.20
2.50
±0.20
±0.30
±0.20
5.50
]
0.85
±0.20
16.50
±0.03
0.90
±0.20
1.50
2.00
3.30
+0.20
–0.10
±0.20
±0.20
±0.20
23.00
±0.20
22.00
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A, November 2002
Page 5
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intended to be an exhaustive list of all such trademarks.
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2
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E
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®
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FASTr™
FRFET™
GlobalOptoisolator™
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HiSeC™
2
C™
I
Across the board. Around the world.™
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MSXPro™
OCX™
OCXPro™
OPTOLOGIC
®
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®
QFET™
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QT Optoelectronics™
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®
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2002 Fairchild Semiconductor Corporation Rev. I1
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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