Datasheet fja4213 Datasheet

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Page 1

Audio Power Amplifier

• High Current Capability IC = -15A

• High Power Dissipation

•Wide S.O.A

• Complement to FJA4313

FJA4213

1.Base 2.Collector 3.Emitter

TO-3P

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

Symbol Parameter Ratings Units

V V V I I P T T

CBO CEO

EBO C B

STG

Collector-Base Voltage -230 V Collector-Emitter Voltage -230 V Emitter-Base Voltage -5 V Collector Current -15 A Base Curre nt -1.5 A Collector Dissipation (TC=25°C) 130 W Junction Temperature 150 °C Storage Temperature - 50 ~ 150 °C

Electrical Characteristics

Symbol Parameter Test Condition Min. Typ. Max. Units

CBO

CEO

EBO

CBO

EBO

FE1

FE2

(sat) Collector-Emitter Saturation Voltage IC=-8A, IB=-0.8A -0.4 -3.0 V

(on) Base-Emitter On Voltage VCE=-5V, IC=-7A -1.0 -1.5 V

* Pulse Test : PW=20us

Collector-Base Breakdown Voltage IC=-5mA, IE=0 -230 V Collector-Emitter Breakdown Voltage IC=-10mA, RBE=∞ -230 V Emitter-Base Breakdown Voltage IE=-5mA, IC=0 -5 V Collector Cut-off Current VCB=-230V, IE=0 -5.0 µA Emitter Cut-off Current VEB=-5V, IC=0 -5.0 µA * DC Current Gain VCE=-5V, IC=-1A 55 160 DC Current Gain VCE=-5V, IC=-7A 35 60

Current Gain Bandwidth Product VCE=-5V, IC=-1A 30 MHz Output Capacitance VCB=-10V, f=1MHz 360 pF

TC=25°C unless otherwise noted

*hFE Classificatio n

Classification R O

FE1

55 ~ 110 80 ~ 160

Page 2

Typical Characteristics

FJA4213

-20

-18

-16

-14

-12

-10

-8

-6

[mA], COLLECTOR CURRENT

-4

-2

-0 -2 -4 -6 -8 -10

IB = -1A

VCE[V], COLLECTOR-EMITTER VO LTAG E

Figure 1. Static Characteristic Figure 2. DC current Gain

10000

1000

℃℃℃℃

Tj=-25

℃℃℃℃

Tj=25

℃℃℃℃

Tj=125

100

= -600mA

= -500mA

= -400mA

IB = -300mA

IB = -200mA

IB = -100mA

IB = -900mA

IB = -800mA

IB = -700mA

Ic=-10Ib

Tj = 125

Tj = 25

Tj = -25

100

VCE = -5V

, DC CURRENT GAIN

110

IC[A], C OL L E CTOR CU RR EN T

10000

1000

100

℃℃℃℃

Tj=125

℃℃℃℃

Tj=25

℃℃℃℃

Tj=-25

Ic=-1 0 Ib

Vbe(sat)[mV], SATURATION VOLTAGE

0.01 0.1 1 10 100

Ic[A], COLLECTOR CURRENT

Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage

[A], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage Figure 6. Safe Operating Area

Vce(sat)[mV], SATURATION VOLTAGE

0.01 0.1 1 10 100

Ic[A], COLLECTOR CURRENT

-100

IC MAX. (Pulsed*)

VCE = 5V

-10

IC MAX. (DC)

-1

-0.1

*SINGLE NONREPETITIVE

[A], COLLECTOR CURRENT

PULSE TC=25[oC]

-0.01 1 10 100

10ms*

100ms*

VCE [V], COLLECTOR-EMITTER VOLTAGE

Rev. A, March 2003

Page 3

Typical Characteristics

160

140

120

100

[W], POWER DISSIPATION

0 255075100125150175

TC[oC], CASE TEM PERATURE

Figure 7. Power Derating

FJA4213

Page 4

Package Dimensions

ø3.20

±0.10

15.60

13.60

9.60

±0.20

TO-3P

±0.20

3.80

4.80

1.50

±0.20 +0.15

–0.05

FJA4213

±0.20

13.90

2.00

±0.20

3.00

±0.20

1.00

±0.20

5.45TYP

[5.45

±0.30

±0.20

12.76

19.90

23.40

±0.20

3.50

±0.30

16.50

5.45TYP

]

[5.45

±0.30

]

±0.20

18.70

1.40

0.60

±0.20

+0.15 –0.05

Dimensions in Millimeters

Page 5

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™

CMOS™

E EnSigna™

FACT™ FACT Quiet series™

FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™

C™

I Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™

ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC

OPTOPLANAR™

PACMAN™ POP™ Power247™ PowerTrench

QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER SMART START™

SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TruTranslation™ UHC™ UltraFET

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Semiconductor reserves the right to make changes at any time without notice in order to improve design.

that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.