Datasheet fgp5n60ls Datasheet

tm

TO-220

G C E

G

C

E

FGP5N60LS

600V, 5A Field Stop IGBT

FGP5N60LS 600V, 5A Field Stop IGBT

February 2010

Features

• High Current Capability

• Low Saturation Voltage: V

• High Input Impedance

•RoHS Compliant

=1.7V @ IC = 5A

CE(sat)

General Description

Using novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for HID bal­last where low conduction losses are essential.

Applications

• HID ballast and Wall dimmer

Absolute Maximum Ratings

Symbol Description Ratings Units

V

CES

V

GES

I

C

I

CM (1)

P

D

Operating Junction Temperature -55 to +150

T

J

T

stg

T

L

Collector to Emitter Voltage 600 V
Gate to Emitter Voltage 20 V
Collector Current @ TC = 25oC10 A
Collector Current @ T
Pulsed Collector Current

Maximum Power Dissipation @ TC = 25oC83 W
Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

= 100oC5 A

C

@ T

= 25oC

C

= 100oC33 W

C

36 A

300

o

C

o

C

o

C

Notes:

1: Repetitive test , Pulse width=100usec , Duty=0.2, VGE=13.5V

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

JC

R

JA

©2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGP5N60LS Rev. A1

Thermal Resistance, Junction to Case - 1.5
Thermal Resistance, Junction to Ambient - 62.5

o

C/W

o

C/W

Package Marking and Ordering Information

FGP5N60LS 600V, 5A Field Stop IGBT

Device Marking Device Package

Packaging

Type Qty per Tube

Max Qty

per Box

FGP5N60LS FGP5N60LS TT220 Tube 50ea -

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

BV
T

J

I

CES

I

GES

On Characteristics

V

GE(th)

V

CE(sat)

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A 600 - - V
Temperature Coefficient of Breakdown

CES

Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V

V

= 0V, IC = 250A

GE

CES

GES

-0.8-V/

, VGE = 0V - - 250 A

, VCE = 0V - - ±400 nA

G-E Threshold Voltage IC = 250A, VCE = VGE 2.7 3.9 4.5 V

= 5A, VGE = 15V -1.72.1V

I

Collector to Emitter Saturation Voltage

Collector to Emitter Saturation Voltage

C

= 5A, VGE = 15V,

I

C

T

= 125oC

C

I

= 14A, VGE = 12V

C

= 14A, VGE = 12V,

I

C

T

= 125oC

C

-1.8- V

-2.73.2V

-3.1- V

o

C

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance

V

= 30V, VGE = 0V,

Output Capacitance - 28 - pF
Reverse Transfer Capacitance - 11 - pF

CE

f = 1MHz

- 278 - pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss - 168 - J

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss - 248 - J

E

ts

Q

g

Q

ge

Q

gc

Turn-On Delay Time

-4.3- ns
Rise Time - 1.6 - ns
Turn-Off Delay Time - 36 - ns
Fall Time - 118 - ns
Turn-On Switching Loss - 38 - J

= 400V, IC = 5A,

V

CC

R

= 10, V

G

Inductive Load, T

GE

= 15V,

= 25oC

C

Turn-Off Switching Loss - 130 - J

Turn-On Delay Time

-4.1- ns
Rise Time - 1.8 - ns
Turn-Off Delay Time - 37 - ns
Fall Time - 150 - ns
Turn-On Switching Loss - 80 - J

= 400V, IC = 5A,

V

CC

R

= 10, V

G

GE

Inductive Load, T

= 15V,

= 125oC

C

Turn-Off Switching Loss - 168 - J

Total Gate Charge

V

= 400V, IC = 5A,

Gate to Emitter Charge - 1.6 - nC
Gate to Collector Charge - 7.9 - nC

CE

V

= 15V

GE

- 18.3 - nC

FGP5N60LS Rev. A1

2 www.fairchildsemi.com

FGP5N60LS 600V, 5A Field Stop IGBT

0246810

0

10

20

30

40

13.5V

15V

20V

TC = 25oC

17V

12V

10V

VGE = 8V

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

0246810

0

10

20

30

40

13.5V

15V

20V

TC = 125oC

17V

12V

10V

VGE = 8V

Collector Current, I

C

[A]

Collector -E mitter Voltage, VCE [V]

0123456

0

10

20

30

40

Common Emitter
VGE = 15V

TC = 25oC
TC = 125oC

Collector Current, I

C

[A]

Collecto r- E mitter Voltage, VCE [V]

24681012

0

10

20

30

Common Emitter
VCE = 20V

TC = 25oC
TC = 125oC

Collector Current, I

C

[A]

Gate-Emitter Voltage,VGE [V]

25 50 75 100 125

1.0

1.5

2.0

2.5

3.0

10A

5A

IC = 2.5A

Common Emitter
VGE = 15V

Collector-Emitter Voltage, V

CE

[V]

Collector-EmitterCase Temperature, TC [oC]

0 4 8 121620

0

4

8

12

16

20

IC = 2.5A

5A

10A

Common Emitter
TC = -40oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level

FGP5N60LS Rev. A1

GE

3 www.fairchildsemi.com

Typical Performance Characteristics

0 4 8 121620

0

4

8

12

16

20

IC = 2.5A

5A

10A

Common Emitter
TC = 25oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

0 4 8 12 16 20

0

4

8

12

16

20

10A

IC = 2.5A

5A

Common Emitter
TC = 125oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

110

0

100

200

300

400

500

600

Common Emitter
VGE = 0V, f = 1MHz

TC = 25oC

C

res

C

oes

C

ies

Capacitance [pF]

Collector-Emitter Voltage, VCE [V]

30

0 5 10 15 20

0

3

6

9

12

15

Common Emitter
TC = 25oC

300V

200V

VCC = 100V

Gate-Emitter Voltage, V

GE

[V]

Gate Ch a rge, Qg [nC]

0.1 1 10 100 1000

0.01

0.1

1

10

1ms

10ms

DC

Single Nonrepetitive
Pulse T

C

= 25oC
Curves must be derated
linearly with increase
in temperature

10s

100s

Collector Current, I

c

[A]

Collector-Emitter Voltage, VCE [V]

0 1020304050

0.5

1

10

Common Emitter
VCC = 400V, VGE = 15V

IC = 5A
TC = 25oC
TC = 125oC

t

d(on)

t

r

Switching Time [ns]

R

[]

FGP5N60LS 600V, 5A Field Stop IGBT

Figure 7. Saturation Voltage vs. V

Figure 8. Saturation Voltage vs. V

GE

GE

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance

100

FGP5N60LS Rev. A1

Gate Resistance,

4 www.fairchildsemi.com

G

Typical Performance Characteristics

0 1020304050

10

100

300

Common Emitter
VCC = 400V, VGE = 15V

IC = 5A
TC = 25oC
TC = 125oC

t

d(off)

t

f

Switching Time [ns]

Gate Resistance, RG []

246810

0.1

1

10

Common Emitter
VGE = 15V, RG = 10

TC = 25oC
TC = 125oC

t

r

t

d(on)

Switching Time [ns]

Collector Cu rre n t, IC [A]

246810

20

100

800

Comm on Emitter
VGE = 15V, RG = 10

TC = 25oC
TC = 125oC

t

d(off)

t

f

Switching Time [ns]

Collector Current, IC [A]

0 1020304050

30

100

1000

Common Emitter
VCC = 400V, VGE = 15V

IC = 5A
TC = 25oC
TC = 125oC

E

on

E

off

Switching Loss [J]

Gate Resistance, RG []

246810

10

100

1000

Comm o n E mitter
VGE = 15V, RG = 10

TC = 25oC
TC = 125oC

E

on

E

off

Switching Loss [J]

Collector Current, IC [A]

1 10 100 1000

0.1

1

10

50

Safe Operating Area
VGE = 13.5V, TC = 125oC

Collector Current, I

C

[A]

Collector-Emitte r Voltage, VCE [V]

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current

FGP5N60LS 600V, 5A Field Stop IGBT

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA
Characteristics

FGP5N60LS Rev. A1

5 www.fairchildsemi.com

Typical Performance Characteristics

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

0.03

0.1

1

2

0.01

0.02

0.1

0.05

0.2

single p ulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + T

C

0.5

t

1

P

DM

t

2

Figure 19.Transient Thermal Impedance of IGBT

FGP5N60LS 600V, 5A Field Stop IGBT

FGP5N60LS Rev. A1

6 www.fairchildsemi.com

Mechanical Dimensions

TO-220AB

FGP5N60LS 600V, 5A Field Stop IGBT

FGP5N60LS Rev. A1

7 www.fairchildsemi.com

TRADEMARKS

tm

®

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK

®

®

EfficentMax™

®

Fairchild
Fairchild Semiconductor
FACT Quiet Series™

®

FACT

®

FAST
FastvCore™
FETBench™
FlashWriter
FPS™
F-PFS™

®

*

®

®

FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR

®

®

®

PDP SPM™
Power-SPM™

SM

PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™

Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*

®

®

™

®

The Power Franchise

TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
SerDes™

UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™

®

®

®

®

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.

FGP5N60LS 600V, 5A Field Stop IGBT

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably

2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.

expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industr y. All manufactures of semicondu ctor products are experiencing count erfeiting of their

parts. Customers who inadvertently purchase counterfeit parts experience ma ny problems such as lo ss of bran d reput ation, sub standard perf ormance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers f r om the
proliferation of counterfeit parts. Fairchild strongly enco urages custome rs to purchase Fairchild parts either dir ectly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct o r from authorized distr ibutors.

PRODUCT STATUS DEFINITIONS
Definition of Terms

.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FGP5N60LS Rev. A1

Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.

8

www.fairchildsemi.com

Rev. I47