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tm
FGP20N60UFD
600V, 20A Field Stop IGBT
FGP20N60UFD 600V, 20A Field Stop IGBT
October 2008
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
=1.8V @ IC = 20A
CE(sat)
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
Applications
• Induction Heating, UPS, SMPS, PFC
C
1
1.Gate 2.Collector 3.Emitter
TO-220
G
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC40 A
Collector Current @ T
Pulsed Collector Current
Maximum Power Dissipation @ TC = 25oC165 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC20 A
C
@ T
= 25oC
C
= 100oC66 W
C
60 A
300
o
C
o
C
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.76
θJC
(Diode) Thermal Resistance, Junction to Case - 2.51
R
θJC
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGP20N60UFD Rev. A
Thermal Resistance, Junction to Ambient - 62.5
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
FGP20N60UFD 600V, 20A Field Stop IGBT
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGP20N60UFD FGP20N60UFDTU TO-220 Tube 50ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
∆BV
∆T
J
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V
Temperature Coefficient of Breakdown
CES
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 250µA
GE
CES
= V
V
CE
CES
T
= 125oC
C
GES
-0.6-V/
, VGE = 0V , TC = 25oC - - 250 µA
, VGE = 0V,
--1mA
, VCE = 0V - - ±400 nA
G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
= 20A, VGE = 15V -1.82.4V
I
Collector to Emitter Saturation Voltage
C
= 20A, VGE = 15V,
I
C
T
= 125oC
C
-2.0- V
o
C
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
V
= 30V, VGE = 0V,
Output Capacitance - 110 - pF
CE
f = 1MHz
Reverse Transfer Capacitance - 40 - pF
- 940 - pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 0.64 - mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 0.77 - mJ
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time - 17 - ns
Turn-Off Delay Time - 87 - ns
Fall Time - 32 64 ns
Turn-On Switching Loss - 0.38 - mJ
= 400V, IC = 20A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 25oC
C
Turn-Off Switching Loss - 0.26 - mJ
Turn-On Delay Time
Rise Time - 16 - ns
Turn-Off Delay Time - 92 - ns
Fall Time - 63 - ns
Turn-On Switching Loss - 0.41 - mJ
V
= 400V, IC = 20A,
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 125oC
C
Turn-Off Switching Loss - 0.36 - mJ
Total Gate Charge
V
= 400V, IC = 20A,
Gate to Emitter Charge - 7 - nC
Gate to Collector Charge - 32 - nC
CE
V
= 15V
GE
-13-ns
-13-ns
-63-nC
FGP20N60UFD Rev. A
2 www.fairchildsemi.com
Page 3
FGP20N60UFD 600V, 20A Field Stop IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25oC- 1.9 2.5
V
FM
t
rr
Q
rr
Diode Forward Voltage IF = 10A
Diode Reverse Recovery Time
=10A, dIES/dt = 200A/µs
I
ES
Diode Reverse Recovery Charge
C
= 125oC- 1.7 -
T
C
T
= 25oC- 35 -
C
= 125oC- 57 -
T
C
T
= 25oC- 41 -
C
= 125oC- 96 -
T
C
nC
V
ns
FGP20N60UFD Rev. A
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics
FGP20N60UFD 600V, 20A Field Stop IGBT
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
60
TC = 25oC
15V
[A]
C
40
20
Collector Current, I
0
0.01.53.04.56.0
Collector-Emitter Voltage, VCE [V]
20V
60
12V
10V
VGE = 8V
TC = 125oC
[A]
C
40
20
Collector Current, I
0
0.01.53.04.56.0
20V
15V
12V
10V
VGE = 8V
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
[A]
C
60
40
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
[A]
C
60
40
Common Emit t e r
VCE = 20V
TC = 25oC
TC = 125oC
20
Collector Current, I
0
01234
Collector-Emitter Voltage, VCE [V]
20
Collector Current, I
0
4681012
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
3.2
Common Emitter
VGE = 15V
2.8
[V]
CE
40A
2.4
2.0
20A
1.6
1.2
IC = 10A
Collector-Emitter Voltage, V
0.8
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
20
[V]
CE
16
Common Emitter
TC = -40oC
12
8
40A
4
Collector-Emitter Voltage, V
0
0 4 8 121620
20A
IC = 10A
Gate-Emitter Vo ltag e, VGE [V]
GE
FGP20N60UFD Rev. A
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics
FGP20N60UFD 600V, 20A Field Stop IGBT
Figure 7. Saturation Voltage vs. V
20
[V]
CE
16
Common Emitter
TC = 25oC
12
Figure 8. Saturation Voltage vs. V
GE
20
[V]
16
CE
12
GE
Common Emitter
TC = 125oC
8
40A
4
Collector-Emitter Voltage, V
0
048121620
20A
IC = 10A
Gate-Emitter Voltage , VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
2500
2000
1500
C
ies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
8
4
Collector-Emitter Voltage, V
0
IC = 10A
0 4 8 121620
20A
40A
Gate-Emitter Voltage, VGE [V]
15
Common Emitter
TC = 25oC
12
[V]
GE
9
VCC = 100V
300V
200V
Capacitance [pF]
1000
500
C
oes
C
res
6
3
Gate-Emitter Voltage, V
0
0.1 1 10
Collector-Emitter Voltage, VCE [V]
30
0
020406080
Gate Ch a r g e , Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
10
[A]
c
1
Single Nonrepetitive
0.1
Collector Current, I
Pulse T
Curves must be derated
linearly with increase
in temperature
0.01
1 10 100 1000
FGP20N60UFD Rev. A
100µs
1ms
10 ms
DC
= 25oC
C
Collector-Emitter Voltage, VCE [V]
10µs
100
t
r
t
Switching Time [ns]
10
5
0 102030405060
d(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
5 www.fairchildsemi.com
Page 6
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000
Comm o n Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC t
100
d(off)
200
Common Emitter
VGE = 15V, RG = 10Ω
100
TC = 25oC
TC = 125oC
t
r
FGP20N60UFD 600V, 20A Field Stop IGBT
Switching Time [ns]
10
0 102030405060
t
f
Gate Resistance, RG [Ω]
10
Switching Time [ns]
3
010203040
Collector Cu rre n t, IC [A]
t
d(on)
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
300
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
100
Switching Time [ns]
10
0 10203040
Collector Cu rre n t, IC [A]
3
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
1
t
d(off)
t
f
TC = 125oC
Switching Loss [mJ]
0.1
0 102030405060
E
on
E
off
Gate Resistance, RG [Ω]
Figure17. Switching Loss vs. Figure18. Turn off Switching
Collector Current SOA Characteristics
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
0.1
Switching Loss [mJ]
0.02
010203040
Collector Current, IC [A]
FGP20N60UFD Rev. A
100
E
on
E
off
[A]
C
10
Collector Current , I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 10 00
Collector-Emitter Voltage, VCE [V]
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
FGP20N60UFD 600V, 20A Field Stop IGBT
Figure 19. Forward Characteristics Figure 20. Reverse Current
40
TJ = 125oC
TJ = 75oC
10
[A]
F
1
Forward Current, I
0.1
01234
Forward Voltage, VF [V]
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
0.05
[nC]
rr
0.04
200A/µs
TJ = 25oC
TC = 25oC
TC = 75oC
TC = 125oC
100
10
[µA]
R
1
0.1
0.01
Reverse Current , I
1E-3
0 100 200 300 400 500 600
TC = 125oC
TC = 75oC
TC = 25oC
Reverse Voltage, VR [V]
60
50
[ns]
rr
di/dt = 100 A/µs
40
0.03
di/dt = 100A/µs
30
200A/µs
0.02
Stored Recovery Charge, Q
0.01
0 5 10 15 20
Forward Current, IF [A]
20
Reverse Recovery Time, t
10
0 5 10 15 20
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zthjc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
2
C
FGP20N60UFD Rev. A
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
TO-220
FGP20N60UFD 600V, 20A Field Stop IGBT
FGP20N60UFD Rev. A
8 www.fairchildsemi.com
Page 9
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®
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not intended to be an exhaustive list of all such trademarks.
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®
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®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
®
FGP20N60UFD 600V, 20A Field Stop IGBT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accord ance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35
FGP20N60UFD Rev. A
www.fairchildsemi.com9
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