Datasheet fgl60n100bntd Datasheet

FGL60N100BNTD

NPT-Trench IGBT

FGL60N100BNTD

IGBT

General Description

Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

Features

• High Speed Switching

• Low Saturation Voltage : V

• High Input Impedance

• Built-in Fast Recovery Diode

CE(sat)

= 2.5 V @ IC = 60A

Induction Heating ( I-H ) applications

Application

Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

C

G

TO-264

G

C

E

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Description FGL60N100BNTD Units

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM

P

D

T

Operating Junction Temperature -55 to +150 °C

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 1000 V Gate-Emitter Voltage ± 25 V Collector Current @ TC = 25°C60 A Collector Current @ T

= 100°C42 A

C

Pulsed Collector Current 200 A Diode Continuous Forward Current @ TC = 100°C15 A Diode Maximum Forward Current 200 A M a x i m u m P o w e r Di ssipation @ TC = 25°C 180 W Maximum Power Dissipation @ T

= 100°C72 W

C

Storage Temperature Range -55 to +150 °C Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds

E

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W

θJC

(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W

R

θJC

R

θJA

Thermal Resistance, Junction-to-Ambient -- 25 °C/W

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FGL60N100BNTD

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV I

CES

I

GES

CES

Collector Emitter Breakdown Voltage Collector Cut-Off Current

V

GE

= 1000V, VGE = 0V

V

CE

G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA

1000 -- -- V

-- -- 1.0 mA

= 0V, IC = 1mA

On Characteristics

V

GE(th)

V

CE(sat)

G-E Threshold Voltage IC = 60mA, VCE = V

I

Collector to Emitter Saturation Voltage

= 10A, VGE = 15V -- 1.5 1.8 V

C

I

= 60A, VGE = 15V -- 2.5 2.9 V

C

GE

4.0 5.0 7.0 V

Dynamic Characteristics

C

ies

C

oes

C

res

Input Capacitance Output Capacitance -- 260 -- pF Reverse Transfer Capacitance -- 200 -- pF

=10V, VGE = 0V,

V

CE

f = 1MHz

-- 6000 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q

g ge gc

Turn-On Delay Time Rise Time -- 320 -- ns Turn-Off Delay Time -- 630 -- ns Fall Time -- 130 250 ns Total Gate Charge Gate-Emitter Charge -- 45 -- nC Gate-Collector Charge -- 95 -- nC

V

= 600 V, IC = 60A,

CC

R

= 51Ω, VGE=15V,

G

Resistive Load, T

= 600 V, IC = 60A,

V

CE

V

= 15V , TC = 25°C

GE

= 25°C

C

-- 140 -- ns

-- 275 350 nC

Electrical Characteristics of DIODE T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

= 15A -- 1.2 1.7 V

I

V

FM

t

rr

I

R Instantaneous Reverse Current VRRM = 1000V -- 0.05 2 µA

Diode Forward Voltage Diode Reverse Recovery Time IF = 60A di/dt = 20 A/us -- 1.2 1.5 µs

F

I

= 60A -- 1.8 2.1 V

F

FGL60N100BNTD Rev.A2

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FGL60N100BNTD

200

Common Emitter T

= 25oC

C

150

[A]

C

100

Collector Current, I

50

0

01234

Collector-Emitter Voltage, VCE [V]

20V

15V

10V

9V

8V

7V

VGE = 6V

90

Common Emitter V

= 15V

GE

80

T

= 25oC

[A]

C

70

TC = 125oC ------

60

50

40

Collector Current, I

30

20

10

0

01234

Collector-Emitter Voltage, VCE [V]

TC = 25oC

TC = 125oC

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics

30A 60A

80A

Common Emitter TC= - 40 OC

Common Emitter VGE=15V

3

[V]

CE

2

Collector-Emitter Voltage, V

1

-50 0 50 100 150

Case Temperature, TC []℃

80A

60A

30A

IC=10A

10

8

[V]

CE

6

4

2

Collector-Emitter Voltage, V

0

4 8 12 16 20

IC=10A

Gate-Emitter Voltage, VGE [V]

Temperature at Varient Current Level

10

8

[V]

CE

6

30A

4

2

Collector-Emitter Voltage, V

0

4 8 12 16 20

60A 80A

IC = 10A

Gate-Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. V

FGL60N100BNTD Rev.A2

Fig 4. Saturation Voltage vs. VGE Fig 3. Saturation Voltage vs. Case

Common Emitter

= 25oC

T

C

Fig 6. Saturation Voltage vs. VGE

GE

10

8

[V]

CE

6

4

2

Collector-Emitter Voltage, V

0

4 8 12 16 20

30A 60A

80A

IC = 10A

Gate-Emitter Voltage, VGE [V]

Common Emitter

= 125oC

T

C

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FGL60N100BNTD

10000

1000

Capacitance [pF]

100

Common Emitter VGE = 0V, f = 1MHz

TC = 25oC

0 5 10 15 20 25 30

Collector-Emitter Voltag e, VCE [V]

Fig 7. Capacitance Characteristics

1000

VCC=600V, Rg=51Ω VGE=15V, TC=25oC

Tdoff

Tf Tr

Switching Time [ns]

100

Tdon

10 20 30 40 50 60

Co llec tor Curre n t, IC [A]

Cies

Coes

Cres

10000

VCC=600V, IC=60A VGE=15V

TC=25oC

1000

100

Switching Time [ns]

10

0 50 100 15 0 20 0

Gate Resistance, RG [?]

Fig 8. Switching Characteristics vs. Gate Resistance

20

Common Emitter VCC=600V, RL=10Ω

TC=25 oC

15

[V]

GE

10

5

Gate-Emitter Voltage,V

0

0 50 100 150 200 250 300

Gate Charge, Qg [nC]

Tdoff

Tr

Tdon

Tf

Fig 9. Switching Characteristics vs.

Fig 10. Gate Charge Characteristics

Collector Current

IC MAX. (Pulsed)

100

IC MAX. (Continuous)

[A]

C

10

1ms

DC Operation

Single Nonrepetitive Pulse

1

T

= 25oC

Collector Current , I

C

Curve must be darated linearly with increase in temperature

0.1 1 10 100 1000

Collector-Emitter Voltage, VCE [V]

50us

100us

10

1

C/W]

o

[

0.5

θJC

0.2

0.1

0.05

0.02

0.01

Thermal Response, Z

single pulse

1E-3

10-410

-3

10-210

Rectangular Pulse Du ration [se c]

Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT

FGL60N100BNTD Rev.A2

-1

0

10

1

10

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FGL60N100BNTD

100

[A]

F

10

1

TC = 100 oC

TC = 25 oC

Forward Current, I

0.1

0.0 0.5 1.0 1.5 2.0 2.5

Forward Voltage, VFM [V]

Fig 13. Forward Characteristics

1.2

[ns]

rr

1.0

0.8

t

rr

I

rr

di/dt=-20A/µs TC=25oC

1.2

1.0

[ns]

rr

0.8 t

0.6

0.4

0.2

Reverse Recovery Time, t

0.0

0 40 80 120 160 200 240

rr

I

rr

IF= 60A TC= 25oC

120

100

80

60

40

20

0

Reverse Recovery Current I

rr

[A]

di/dt [A/µs]

Fig 14. Reverse Recovery Characteristics vs. di/dt

12

Reverse Recovery Current I

10

8

[µA]

1000

R

100

TC = 150oC

10

1

0.6

Reverse Recovery Time, t

0.4

10 20 30 40 50 60

6

4

Forward Current, IF [A]

Fig 15. Reverse Recovery Characteristics vs. Forward Current

250

200

[pF]

j

150

100

Capacitance, C

50

0

0.1 1 10 100

Reverse Voltage, VR [V]

TC = 25 oC

rr

[A]

0.1

Reverse Current, I

0.01

1E-3

0 300 600 900

TC= 25oC

Reverse Voltage, VR [V]

Fig 16. Reverse Current vs. Reverse Voltage

Fig 17. Junction capacit a nce

FGL60N100BNTD Rev.A2

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Package Dimension

(8.30) (8.30)

(9.00)

20.00

±0.20

TO-264

(1.00)

(4.00)

±0.20

6.00

FGL60N100BNTD

(2.00)

(R2.00)

ø3.30

(9.00)

(11.00)

±0.20

(R1.00)

±0.20

1.50

4.90

(7.00)

±0.20

(7.00)

(1.50) (1.50)

±0.20

2.50

3.00

1.00

5.45TYP

±0.30

[5.45

]

5.45TYP

[5.45

±0.20

+0.25 –0.10

±0.30

(0.50)

(2.00)

]

±0.10

2.50

±0.20

20.00

±0.50

20.00

0.60

+0.25 –0.10

(1.50)

2.80

±0.30

±0.20

(0.15)

5.00

3.50

(1.50)

FGL60N100BNTD Rev.A2 www.fairchildsemi.com

(2.80)

Dimensions in Millimeters

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Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been dis-

continued by Fairchild Semiconductor.The datasheet is printed for reference information only.

FGL60N100BNTD Rev.A2

Rev. I29

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