Datasheet fgh80n60fd Datasheet

tm

G

C

E

C

G

COLLECTOR

(FLANGE)

FGH80N60FD

600V, 80A Field Stop IGBT

FGH80N60FD 600V, 80A Field Stop IGBT

November 2009

Features

• High current capability

• Low saturation voltage: V

• High input impedance

• Fast switching

•RoHS complaint

=1.8V @ IC = 40A

CE(sat)

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for Induction Heating applications where low conduction and switching losses are essential.

Applications

• Induction Heating Application

Absolute Maximum Ratings

Symbol Description Ratings Units

V

CES

V

GES

I

C

I

CM (1)

P

D

Operating Junction Temperature -55 to +150 C

T

J

T

stg

T

L

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 600 V Gate-Emitter Voltage  20 V Collector Current @ TC = 25C80 A Collector Current @ T Pulsed Collector Current @ TC = 25C 160 A Maximum Power Dissipation @ TC = 25C290 W Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 C Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

= 100C40 A

C

= 100C116 W

C

300 C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

R

(IGBT) Thermal Resistance, Junction-to-Case -- 0.43 C/W

JC

(Diode) Thermal Resistance, Junction-to-Case 1.5 C/W

R

JC

R

JA

FGH80N60FD Rev. A2

Thermal Resistance, Junction-to-Ambient -- 40 C/W

Package Marking and Ordering Information

FGH80N60FD 600V, 80A Field Stop IGBT

Max Qty

per Box

Device Marking Device Package

Packaging

Type Qty per Tube

FGH80N60FD FGH80N60FDTU TO-247 Tube 30ea -

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

CES

BV T

J

I

CES

I

GES

On Characteristics

V

GE(th)

V

CE(sat)

Dynamic Characteristics

C

ies

C

oes

C

res

Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V

/

Temperature Coefficient of Breakdown

CES

Voltage Collector Cut-Off Current VCE = V G-E Leakage Current VGE = V

VGE = 0V, IC = 250uA

, VGE = 0V -- -- 250 uA

CES

, VCE = 0V -- -- ±400 nA

GES

-- 0.6 -- V/C

G-E Threshold Voltage IC = 250uA, VCE = VGE 4.5 5.5 7.0 V

I

= 40A, VGE = 15V -- 1.8 2.4 V Collector to Emitter Saturation Voltage

Input Capacitance Output Capacitance -- 200 -- pF

C

= 40A, VGE = 15V,

I

C

T

= 125C

C

V

= 30V, VGE = 0V,

CE

f = 1MHz

-- 2.05 -- V

-- 2110 -- pF

Reverse Transfer Capacitance -- 60 -- pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 1.52 2.28 mJ

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss -- 1.88 -- mJ

E

ts

Q

g

Q

ge

Q

gc

Turn-On Delay Time Rise Time -- 56 -- ns Turn-Off Delay Time -- 126 -- ns Fall Time -- 50 100 ns Turn-On Switching Loss -- 1 1.5 mJ

= 400 V, IC = 40A,

V

CC

R

= 10, V

G

Inductive Load, T

GE

= 15V,

= 25C

C

Turn-Off Switching Loss -- 0.52 0.78 mJ

Turn-On Delay Time Rise Time -- 54 -- ns Turn-Off Delay Time -- 131 -- ns Fall Time -- 70 -- ns Turn-On Switching Loss -- 1.1 -- mJ

= 400 V, IC = 40A,

V

CC

R

= 10, V

G

Inductive Load, T

GE

= 15V,

= 125C

C

Turn-Off Switching Loss -- 0.78 -- mJ

Total Gate Charge

V

= 400 V, IC = 40A,

Gate-Emitter Charge -- 14 -- nC Gate-Collector Charge -- 58 -- nC

CE

V

= 15V

GE

-- 21 -- ns

-- 20 -- ns

-- 120 -- nC

FGH80N60FD Rev. A2

2 www.fairchildsemi.com

FGH80N60FD 600V, 80A Field Stop IGBT

Electrical Characteristics of the Diode T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max Units

T

= 25C- 2.3 2.8

V

FM

t

rr

I

rr

Q

rr

Diode Forward Voltage IF = 20A

Diode Reverse Recovery Time

=20A, dIES/dt = 200A/s

I

ES

Diode Reverse Recovery Current

Diode Reverse Recovery Charge

C

= 125C- 1.7 -

T

C

T

= 25C- 36 -

C

= 125C - 105 -

T

C

T

= 25C- 2.6 -

C

= 125C- 7.8 -

T

C

T

= 25C - 46.8 -

C

= 125C - 409 -

T

C

nC

V

ns

A

FGH80N60FD Rev. A2

3 www.fairchildsemi.com

Typical Performance Characteristics

0246810

0

40

80

120

160

20V

TC = 25oC

12V

15V

10V

VGE = 8V

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

0246810

0

40

80

120

160

20V

TC = 125oC

12V

15V

10V

VGE = 8V

Collector Current, I

C

[A]

Collecto r-Emitter Voltag e , VCE [V]

25 50 75 100 125

1.0

1.5

2.0

2.5

3.0

3.5

80A

40A

20A

Common Emitter VGE = 15V

Collector-Emitter Voltage, V

CE

[V]

Case Temperature, TC [oC]

4 8 12 16 20

0

4

8

12

16

20

IC = 20A

40A

80A

Common Emitter TC = 25oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

0123456

0

40

80

120

160

Common Emitte r VGE = 15V

TC = 25oC TC = 125oC

Collector Current, I

C

[A]

Collec to r-E mitter Voltag e , VCE [V]

24681012

0

40

80

120

160

Common Emitter VCE = 20V

TC = 25oC TC = 125oC

Collector Current, I

C

[A]

Gate-Emitter Voltage,VGE [V]

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics C ha rac t e rit i c s

FGH80N60FD 600V, 80A Field Stop IGBT

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltag e vs . Vg e Temperature at Variant Current Level

FGH80N60FD Rev. A2

4 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

4 8 12 16 20

0

4

8

12

16

20

IC = 20A

40A

80A

Common Emitter TC = 125oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

0.1 1 10

0

1000

2000

3000

4000

5000

Common Emitter VGE = 0V, f = 1MHz

TC = 25oC

C

rss

C

oss

C

iss

Capacitance [pF]

Collector-Emitter Voltage, VCE [V]

30

1 10 100 1000

0.01

0.1

1

10

100

1ms

10 ms

DC

Single No n r e p e t itive Pulse T

C

= 25oC

Curves must be derated linearly with increase in temperature

10s

100s

Collector Current, I

c

[A]

Collector-Emitter Voltage, VCE [V]

400

0 50 100 150

0

3

6

9

12

15

Common Emitter TC = 25oC

300V

200V

Vcc = 100V

Gate-Emitter Voltage, V

GE

[V]

Gate Ch a r g e , Qg [nC]

0 1020304050

10

100

200

Common Emitter VCC = 400V, VGE = 15V

IC = 40A TC = 25oC TC = 125oC

t

d(on)

t

r

Switching Time [ns]

Gate Resistance, RG []

5

1 10 100 1000

1

10

100

Safe Operating Area VGE = 20V, TC = 100oC

Collector Curre nt, I

C

[A]

Collector-Emitter Voltage, VCE [V]

200

Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics

Figure 9. Gate Charge Characteristics Figure 10. SOA Characteeristics

FGH80N60FD 600V, 80A Field Stop IGBT

Figure 11. Turn-Off Switching SOA Figure 12. Turn-On Characteristics vs. Characteristics Gate Resistance

FGH80N60FD Rev. A2

5 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

0 1020304050

10

100

1000

Common Emitter VCC = 400V, VGE = 15V

IC = 40A TC = 25oC TC = 125oC

t

d(off)

t

f

Switching Time [ns]

Gate Resistance, RG []

2000

20 40 60 80

10

100

Common Emitter VGE = 15V, RG = 10

TC = 25oC TC = 125oC

t

r

t

d(on)

Switching Time [ns]

Collector Current, IC [A]

200

20 40 60 80

100

500

Commo n Emitter VGE = 15V, RG = 10

TC = 25oC TC = 125oC

t

d(off)

t

f

Switching Time [ns]

Collector Current, IC [A]

20

0 1020304050

1

0.3

Common Emitter VCC = 400V, VGE = 15V

IC = 40A TC = 25oC TC = 125oC

E

on

E

off

Switching Loss [mJ]

Gate Resistance, RG []

5

20 40 60 80

0.1

1

10

Common Emitter VGE = 15V, RG = 10

TC = 25oC TC = 125oC

E

on

E

off

Switching Loss [mJ]

Collector Current, I

[A]

Figure 13. Turn-Off Characteristics vs. Figure 14. Turn-On Characteristics vs. Gate Resistance Collector Current

FGH80N60FD 600V, 80A Field Stop IGBT

Figure 15. Turn-Off Characteristics vs.

Figure 16. Switching Loss vs Gate Resistance

Collector Current

Figure 17. Switching Loss vs Collector Current

FGH80N60FD Rev. A2

6 www.fairchildsemi.com

Typical Performance Characteristics (Continued)

01234

0.1

1

10

100

TC = 75oC

TC = 25oC

TC = 125oC

Forward Voltage , VF [V]

Forward Current , I

F

[A]

100 200 300 400

0

100

200

300

400

500

600

125oC

25oC

Stored Recovery Charge , Q

rr

[nC]

di/dt ,[A/s]

100 200 300 400

20

40

60

80

100

120

140

125oC

25oC

Reverse Recovery Time, t

rr

[ns]

di/dt, [A/s]

5

100 200 300 400

0

5

10

15

20

125oC

25oC

Reverse Recovery Current, I

rr

[A]

di/dt, [A/s]

5

1E-5 1E-4 1E-3 0.01 0.1 1

1E-3

0.01

0.1

1

0.2

0.5

0.1

0.05

0.01

0.02

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + T

C

t

1

P

DM

t

2

Figure 18. Transient Thermal Impedance of IGBT

Figure 19. Typical Forward Voltage Drop Figure 20. Stored Charge

FGH80N60FD 600V, 80A Field Stop IGBT

Figure 21. Reverse Recovery Time Figure 22. Reverse Recovery Current

FGH80N60FD Rev. A2

7 www.fairchildsemi.com

Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

FGH80N60FD 600V, 80A Field Stop IGBT

FGH80N60FD Rev. A2

8 www.fairchildsemi.com

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FGH80N60FD 600V, 80A Field Stop IGBT

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

injury of the user.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been dis-

continued by Fairchild Semiconductor.The datasheet is printed for reference information only.

Rev. I28

9 www.fairchildsemi.com

FGH80N60FD Rev. A2