Datasheet fgh50n3 Datasheet

FGH50N3

300V, PT N-Channel IGBT

FGH50N3

July 2002

General Description

The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been

o

C and 150oC.

Features

•Low V

•Low E

•SCWT (@ T

• 300V Switching SOA Capability

•Positive V 50A

. . . . . . . . . . . . . . . . . . . < 1.4V max

CE(SAT)

. . . . . . . . . . . . . . . . . . . . . . . . . < 200µJ

OFF

= 125°C). . . . . . . . . . . . . . . . . > 8µs

J

Temperature Coefficient above

CE(SAT)

optimized for medium frequency switch mode power supplies.

Formerly Developmental Type TA49485

Package Symbol

E

C

G

TO-247

COLLECTOR

(FLANGE)

Device Maximum Ratings T

= 25°C unless otherwise noted

C

G

Symbol Parameter Ratings Units

BV

CES

I

C25

I

C110

I

CM

V

GES

V

GEM

SSOA Switching Safe Operating Area at T

E

AS

E

ARV

P

T

STG

t

SC

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction t em perat ure.

2. V

CE(PK)

Collector to Emitter Breakdown Voltage 300 V Collector Current Continuous, TC = 25°C 75 A Collector Current Continuous, TC = 110°C 75 A Collector Current Pulsed (Note 1) 240 A Gate to Emitter Voltage Continuous ±20 V Gate to Emitter Voltage Pulsed ±30 V

= 150°C, Figure 2 150A at 300V

J

Single Pulse Avalanche Energy, ICE = 30A, L = 1.78mH, VDD = 50V 800 mJ Single Pulse Reverse Avalanche Energy, IEC = 30A, L = 1.78mH, VDD = 50V 800 mJ Power Dissi pation Total TC = 25°C 463 W

D

Power Dissipation Derating T Operating Junction Temperature Range -55 to 150 °C

J

> 25°C 3.7 W/°C

C

Storage Junction Temperature Range -55 to 150 °C Short Circuit Withstand Time (Note 2) 8 µs

= 180V, TJ = 125°C, VGE = 12Vdc, RG = 5Ω

C

E

FGH50N3 Rev. A

Package Marking and Ordering Information

Device Marking Device Package Tape Width Quantity

FGH50N3 FGH50N3 TO-247 N/A 30

FGH50N3

Electrical Characteristics

TJ = 25°C unless otherwise noted

Symbol Parameter Tes t Conditions Min Typ Max Units

Off State Characteristics

BV BV

I

CES

I

GES

Collector to Emitter Breakdown Voltage I

CES

Emitter to Collector Breakdown Voltage I

ECS

= 250µA, VGE = 0V 300V - - V

CE

= 10mA, VGE = 0V 15V - - V

EC

Collector to Emitter Leakage Current VCE = 300V TJ = 25°C - - 250 µA

T

= 125°C--2.0mA

J

Gate to Emitter Leakage Current VGE = ± 20V - - ±250 nA

On State Characteristics

V

CE(SAT)

Collector to Emitter Saturation Voltage ICE= 30A

= 15V

V

GE

T

= 25°C - 1.30 1.4 V

J

= 125°C - 1.25 1.4 V

T

J

Dynamic Characteristics

Q

G(ON)

V

GE(TH)

V

GEP

Gate Charge I

Gate to Emitter Threshold Voltage I Gate to Emitter Plateau Voltage I

= 30A

CE

= 150V

V

CE

= 250µA, V

CE

= 30A, VCE = 150V - 7.0 - V

CE

V

= 15V - 180 - nC

GE

= 20V - 228 - nC

V

GE

CE

= V

GE

4.0 4.8 5.5 V

Switching Characteristics

SSOA Switching SOA T

t

d(ON)I

t

d(OFF)I

E E

t

d(ON)I

t

d(OFF)I

E E

Current Turn-On Delay Time IGBT and Diode at TJ = 25°C, Current Rise Time - 15 - ns

t

rI

Current Turn-Off Delay Time - 135 - ns Current Fall Time - 12 - ns

t

fI

Turn-On Energy (Note 1) - 130 - µJ

ON2

Turn-Off Energy (Note 2) - 92 120 µJ

OFF

Current Turn-On Delay Time IGBT and Diode at TJ = 125°C, Current Rise Time - 13 - ns

t

rI

Current Turn-Off Delay Time - 155 190 ns

t

Current Fall Time - 7 15 ns

fI

Turn-On Energy (Note 1) - 225 270 µJ

ON2

Turn-Off Energy (Note 2) - 135 200 µJ

OFF

= 150°C, RG = 5Ω,

J

V

= 15V , L = 25µH,

GE

Vce = 300V

= 30A,

I

CE

V

= 180V,

CE

= 15V,

V

GE

= 5Ω,

R

G

L = 100µH, Test Circuit - Figure 20

= 30A,

I

CE

V

= 180V,

CE

= 15V,

V

GE

= 5Ω,

R

G

L = 100µH, Test Circuit - Figure 20

150 - - A

-20-ns

-19-ns

Thermal Characteristics

R

NOTE:

E

1.

The diode type is specified in figure 20.

2. Turn-Off Energy Loss (E

the input pulse and ending at the point where the collector current equals zero (I JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Thermal Resistance Junction-Case TO-247 - - 0.27 °C/W

θJC

is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT.

ON2

) is defined as the integral of the instantaneous power loss starting at the trailing edge of

OFF

= 0A). All devices were tested per

CE

Typical Performance Curves T

= 25°C unless otherwise noted

J

FGH50N3

200

= 15V

V

GE

160

120

80

PACKAGE LIMITED

, DC COLLECTOR CURRENT (A)

40

CE

I

0

25 75 100 125 150

50

TC, CASE TEMPERATURE (oC)

Figure 1. DC Collector Current vs Case

Temperature

500

TJ = 125oC, RG = 5Ω, L = 100µH, V

400

T

75oC

C =

300

200

= 180V

CE

VGE = 10V

VGE = 15V

175

TJ = 150oC, RG = 5Ω, V

150

125

100

75

50

25

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

= 15V, L = 25µH

GE

150 20010050 250 300

3500

Figure 2. Minimum Switching Safe Operating Area

30

VCE = 180V, RG = 5Ω, TJ = 125oC

25

t

20

15

SC

800

700

I

SC

600

500

f

= 0.05 / (t

MAX1

= (PD - PC) / (E

f

MAX2

100

, OPERATING FREQUENCY (kHz)

MAX

f

P

= CONDUCTION DISSIPATION

C

(DUTY FACTOR = 50%)

= 0.27oC/W, SEE NOTES

R

ØJC

60

2 10 20 100

ICE, COLLECTOR TO EMITTER CURRENT (A)

d(OFF)I

ON2

+ t

d(ON)I

+ E

OFF

)

Figure 3. Operating Frequency vs Collector to

10

5

, SHORT CIRCUIT WITHSTAND TIME (µs)

SC

t

0

91112

10 16

VGE, GATE TO EMITTER VOLTAGE (V)

13 14

Figure 4. Short Circuit Withstand Time

400

300

200

15

Emitter Current

60

DUTY CYCLE < 0.5%, V PULSE DURATION = 250µs

50

40

30

20

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0.25 0.75

= 10V

GE

TJ = 25oC

TJ = 150oC

1.25 1.5

0.5 , COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

1.0 1.75

TJ = 125oC

2.0

60

DUTY CYCLE < 0.5%, V PULSE DURATION = 250µs

50

40

30

20

TJ = 150oC

10

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

0.25 0.5 0.75 1.0 1.25 1.5 1.75 VCE, COLLECTOR TO EMITTER VOLTAGE (V)

GE

= 15V

TJ = 25oC

TJ = 125oC

Figure 5. Collector to Emitter On-State Voltage Figure 6. Collector to Emitter On-State Voltage

, PEAK SHORT CIRCUIT CURRENT (A)

SC

I

Typical Performance Curves T

= 25°C unless otherwise noted (Continued)

J

FGH50N3

1.4 RG = 5Ω, L = 100µH, VCE = 180V

1.2

1.0

0.8

0.6

0.4

, TURN-ON ENERGY LOSS (mJ)

ON2

0.2

E

0

0 102030405060

TJ = 25oC, TJ = 125oC, VGE = 10V

TJ = 25oC, TJ = 125oC, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

Figure 7. Turn-On Energy Loss vs Collector to

Emitter Current

35

RG = 5Ω, L = 100µH, VCE = 180V

30

25

, TURN-ON DELAY TIME (ns)

20

d(ON)I

t

15

0 102030405060

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 125oC, VGE = 10V

TJ = 25oC, TJ = 125oC, VGE = 15V

Figure 9. Turn-On Delay Time vs Collector to

Emitter Current

400

RG = 5Ω, L = 100µH, VCE = 180V

350

300

250

TJ = 125oC, VGE = 10V, VGE = 15V

200

150

100

TURN-OFF ENERGY LOSS (µJ)

OFF

50

E

0

0 102030405060

TJ = 25oC, VGE = 10V, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

Figure 8. Turn-Off Energy Loss vs Collector to

Emitter Current

100

RG = 5Ω, L = 100µH, VCE = 180V

80

60

TJ = 25oC, TJ = 125oC, V

40

, RISE TIME (ns)

rI

t

20

0

0 102030405060

ICE, COLLECTOR TO EMITTER CURRENT (A)

= 10V

GE

TJ = 25oC, TJ = 125oC, V

GE

=15V

Figure 10. Turn-On Rise Time vs Collector to

Emitter Current

170

RG = 5Ω, L = 100µH, VCE = 180V

160

150

TJ = 25oC, TJ = 125oC, VGE = 15V

140

130

120

, TURN-OFF DELAY TIME (ns)

110

d(OFF)I

t

100

0 102030405060

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 25oC, TJ = 125oC, VGE = 10V

Figure 11. Turn-Off Delay Time vs Collector to

Emitter Current

24

RG = 5Ω, L = 100µH, VCE = 180V

20

16

12

, FALL TIME (ns)

8

fI

t

4

0

0 102030405060

TJ = 25oC, VGE = 10V, 15V

TJ = 125oC, VGE = 10V, 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

Figure 12. Fall Time vs Collector to Emitter

Current

Typical Performance Curves T

= 25°C unless otherwise noted (Continued)

J

FGH50N3

250

DUTY CYCLE < 0.5%, V PULSE DURATION = 250µs

200

150

100

50

, COLLECTOR TO EMITTER CURRENT (A)

CE

I

0

567891011

TJ = 25oC

TJ = 125oC

VGE, GATE TO EMITTER VOLTAGE (V)

= 10V

CE

TJ = -55oC

16

I

= 1mA, RL = 5Ω, TJ = 25oC

G(REF)

14

12

10

8

6

4

, GATE TO EMITTER VOLTAGE (V)

GE

2

V

0

VCE = 300V

VCE = 100V

25 50 75 100 125 2000 150

QG, GATE CHARGE (nC)

Figure 13. Transfer Characteristic Figure 14. Gate Charge

1.2 RG = 5Ω, L = 100µH, VCE = 180V, VGE = 15V E

= E

TOTAL

1.0

0.8

0.6

0.4

0.2

, TOTAL SWITCHING ENERGY LOSS (mJ)

TOTAL

E

0

+ E

ON2

OFF

5025 75 100 125 150

TC, CASE TEMPERATURE (oC)

Figure 15. Total Switching Loss vs Case

Temperature

= 60A

I

CE

ICE = 30A

= 15A

I

CE

40

TJ = 125oC, L = 100µH, VCE = 180V, VGE = 15V

E

= E

TOTAL

10

ICE = 60A

1

ICE = 30A

, TOTAL SWITCHING ENERGY LOSS (mJ)

TOTAL

E

ICE = 15A

0.1 1 10 100 1000

+ E

ON2

OFF

RG, GATE RESISTANCE (Ω)

Figure 16. Total Switching Loss vs Gate

Resistance

VCE = 200V

175

10

FREQUENCY = 1MHz

C

IES

C

1.0

C, CAPACITANCE (nF)

0.1

0.05 0 1020304050

OES

C

RES

60 70 80 90 100

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 17. Capacitance vs Collector to Emitter

Voltage

3.5 DUTY CYCLE < 0.5% PULSE DURATION = 250µs, TJ = 25oC

3.0

2.5

2.0

1.5

, COLLECTOR TO EMITTER VO LTAGE (V)

CE

V

1.0

6

7131415

ICE = 60A

ICE = 30A

ICE = 15A

98101112 16

VGE, GATE TO EMITTER VOLTAGE (V)

Figure 18. Collector to Emitter On-State V oltage vs

Gate to Emitter Voltage

Typical Performance Curves T

0

10

0.50

= 25°C unless otherwise noted (Continued)

J

FGH50N3

0.20

0.10

-1

10

0.05

0.02

0.01

, NORMALIZED THERMAL RESPONSE

JC

θ

10

Z

-2

10

-5

SINGLE PULSE

-4

10

Figure 19. IGBT Normalized Transient Thermal Impedance, Junction to Case

Test Circuit and Waveforms

FFH30US30S

DIODE 49449

L = 100µH

RG = 5

Ω

+

FGH50N3

-

-3

10

-2

10

t1, RECTANGULAR PULSE DURATION (s)

V

GE

V

CE

I

VDD = 180V

CE

P

D

DUTY F ACTOR, D = t1 / t PEAK TJ = (PD X Z

-1

10

E

90%

10%

t

d(OFF)I

t

fI

90%

OFF

t

1

t

2

X R

) + T

θ

JC

θ

JC

C

0

10

1

10

10%

E

ON2

t

rI

t

d(ON)I

Figure 20. Inductive Switching Test Circuit

Figure 21. Switching Test Waveforms

FGH50N3

Handling Precautions for IGBTs

Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercise d t o assure that the static char ge built in the handler’s body capacitance is not di sc har ged through the device. With proper handling and app lic at io n procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer ap plication s, with virtual l y no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precauti ons are taken:

1. Prior to assembly into a cir cuit, all l eads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive mat erial such as “ECCOSORBD™ LD26” or equivalent.

2. When devices ar e remo v ed b y hand f rom t hei r carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should ne ver be i nserted into or remo ved from circuits with power on.

5. Gate Voltage Rating - Never exceed the gatevoltage rating of V can result in permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are essentially capacitors. Cir cuits that leave t he gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.

7. Gate Protection - These devices do not have an internal monolithi c Zener diode from gate to emitter. If gate protection is required an external Zener is recommended.

. Exceeding the rated VGE

GEM

Operating Frequency Information

Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows

or f

f

MAX1

The information is based on m easurements of a

; whichever is smaller at each point.

MAX2

typical device and is bounded by the maximum rated junction temperature.

is defined by f

f

MAX1

Deadtime (the denominator) has been arbitrarily held

MAX1

= 0.05/(t

to 10% of the on-state time for a 50% duty fac tor. Other definitions are possible. t defined in Figure 21. Device turn-off delay can

d(OFF)I

establish an additional freque ncy limiting condition for an appli catio n oth er than T when controlling output r i pp l e under a lightly loaded

JM

. t

condition.

is defined by f

f

MAX2

The allowable dissipa tion (P

=(TJM-TC)/R

P

D

and conduction losses must not exceed P

= (PD - PC)/(E

MAX2

. The sum of device switching

θJC

) is defined b y

D

duty factor was used (Figure 3) and the conduction losses (P

E

ON2

waveforms shown in Figure 21. E

) are approximated by PC=(VCExICE)/2.

C

and E

are defined in the switching

OFF

of the instantaneous power los s (I turn-on and E power loss (I are included in the calcula tion for E collector current equa ls zero ( I

is the integral of the instantaneous

OFF

CExVCE

) during turn-off. All tail losses

= 0)

CE

) plots are

CE

+ t

d(OFF)I

and t

is important

d(OFF)I

+ E

OFF

is the integral

ON2

x VCE) during

CE

; i.e., the

OFF

d(ON)I

ON2

. A 50%

D

).

are

).

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or In Design

First Production

Full Production

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I1