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tm
FGH40N65UFD
650V, 40A Field Stop IGBT
FGH40N65UFD 600V, 40A Field Stop IGBT
March 2009
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
=1.8V @ IC = 40A
CE(sat)
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new sesries of Field Stop IGBTs offer the optimum performance for
Solar Inverter, UPS, SMPS and PFC applications where low
conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, SMPS, PFC
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Collector to Emitter Voltage 650 V
Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC80 A
Collector Current @ T
Pulsed Collector Current
Maximum Power Dissipation @ TC = 25oC290 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC40 A
C
@ T
= 25oC
C
= 100oC116 W
C
120 A
300
o
C
o
C
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.43
θJC
(Diode) Thermal Resistance, Junction to Case - 1.45
R
θJC
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH40N65UFD Rev. A1
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
FGH40N65UFD 600V, 40A Field Stop IGBT
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGH40N65UFD FGH40N65UFDTU TO-247 Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
∆BV
∆T
J
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 650 - - V
Temperature Coefficient of Breakdown
CES
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 250µA
GE
CES
GES
-0.6-V/
, VGE = 0V - - 250 µA
, VCE = 0V - - ±400 nA
G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
= 40A, VGE = 15V -1.82.4V
I
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 200 - pF
C
= 40A, VGE = 15V,
I
C
T
= 125oC
C
V
= 30V, VGE = 0V,
CE
f = 1MHz
-2.0- V
-2110- pF
Reverse Transfer Capacitance - 60 - pF
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 1.65 - mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 1.89 - mJ
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time - 44 - ns
Turn-Off Delay Time - 112 - ns
Fall Time - 30 60 ns
Turn-On Switching Loss - 1.19 - mJ
= 400V, IC = 40A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 25oC
C
Turn-Off Switching Loss - 0.46 - mJ
Turn-On Delay Time
Rise Time - 45 - ns
Turn-Off Delay Time - 120 - ns
Fall Time - 40 - ns
Turn-On Switching Loss - 1.2 - mJ
= 400V, IC = 40A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 125oC
C
Turn-Off Switching Loss - 0.69 - mJ
Total Gate Charge
V
= 400V, IC = 40A,
Gate to Emitter Charge - 14 - nC
Gate to Collector Charge - 58 - nC
CE
V
= 15V
GE
-24-ns
-24-ns
- 120 - nC
FGH40N65UFD Rev. A1
2 www.fairchildsemi.com
Page 3
FGH40N65UFD 600V, 40A Field Stop IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25oC - 1.95 2.6
V
FM
t
rr
Q
rr
Diode Forward Voltage IF = 20A
Diode Reverse Recovery Time
=20A, dIES/dt = 200A/µs
I
ES
Diode Reverse Recovery Charge
C
= 125oC - 1.85 -
T
C
T
= 25oC- 45 -
C
= 125oC - 140 -
T
C
T
= 25oC- 75 -
C
= 125oC - 375 -
T
C
nC
V
ns
FGH40N65UFD Rev. A1
3 www.fairchildsemi.com
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Typical Performance Characteristics
FGH40N65UFD 600V, 40A Field Stop IGBT
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
120
TC = 25oC
100
[A]
C
80
60
40
Collector Current, I
20
0
0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V]
20V
15V
12V
10V
VGE = 8V
120
TC = 125oC
100
[A]
C
80
60
40
Collector Current, I
20
0
0.0 1.5 3.0 4.5 6.0
Collector-Emitter Voltage, VCE [V]
20V
15V
12V
10V
VGE = 8V
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
120
Common Emitter
VGE = 15V
100
TC = 25oC
[A]
TC = 125oC
C
80
120
Common Emitter
VCE = 20V
100
TC = 25oC
[A]
TC = 125oC
C
80
60
40
Collector Current, I
20
0
01234
Collector-Emitter Voltage, VCE [V]
60
40
Collector Current, I
20
0
56789101112
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
3.5
Common Emitter
VGE = 15V
[V]
3.0
CE
2.5
2.0
1.5
Collector-Emitter Voltage, V
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
80A
40A
IC = 20A
20
[V]
CE
16
12
Common Emitter
TC = - 40oC
8
80A
4
Collector-Emitter Voltage, V
0
4 8 12 16 20
IC = 20A
Gate-Emitter Voltage, VGE [V]
40A
GE
FGH40N65UFD Rev. A1
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics
FGH40N65UFD 600V, 40A Field Stop IGBT
Figure 7. Saturation Voltage vs. V
20
[V]
CE
16
12
Figure 8. Saturation Voltage vs. V
GE
Common Emitter
TC = 25oC
20
16
[V]
CE
12
GE
Common Emitter
TC = 125oC
8
40A
80A
4
Collector-Emitter Voltage, V
0
4 8 12 16 20
IC = 20A
Gate-Emitter V o ltag e, VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
5000
Common Emitter
VGE = 0V, f = 1MHz
4000
C
iss
TC = 25oC
3000
2000
C
oss
Capacitance [pF]
1000
C
rss
8
40A
80A
4
Collector-Emitter Voltage, V
0
4 8 12 16 20
IC = 20A
Gate-Emitter Voltage, VGE [V]
Vcc = 100V
200V
300V
15
Common Emitter
TC = 25oC
12
[V]
GE
9
6
3
Gate-Emitter Voltage, V
0
0.1 1 10
Collector-Emitter Voltage, VCE [V]
30
0
0 50 100 150
Gate Ch a r g e , Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
400
100
[A]
c
10
1
Single Nonrepetitive
= 25oC
Pulse T
Collector Current, I
0.1
0.01
1 10 100 1000
C
Curves must be derated
linearly with increase
in temperature
Collector-Emitter Voltage, VCE [V]
200
10µs
100
100µs
1ms
10 ms
DC
Switching Time [ns]
10
0 1020304050
t
t
r
d(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
FGH40N65UFD Rev. A1
5 www.fairchildsemi.com
Page 6
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
5500
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
1000
TC = 125oC
100
Switching Time [ns]
t
d(off)
t
f
500
100
Switching Time [ns]
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
t
d(on)
t
r
FGH40N65UFD 600V, 40A Field Stop IGBT
10
0 1020304050
Gate Resistance, RG [Ω]
10
20 40 60 80
Collector Current, IC [A]
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance
Collector Current
600
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
t
100
Switching Time [ns]
10
20 40 60 80
Collector Current, IC [A]
d(off)
t
f
10
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
E
on
E
off
1
Switching Loss [mJ]
0.3
0 1020304050
Gate Resistance, RG [Ω]
Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching
SOA Characteristics
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
E
on
[A]
C
200
100
1
Switching Loss [mJ]
0.1
20 40 60 80
FGH40N65UFD Rev. A1
Collector Current, IC [A]
E
off
10
Collector Current, I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
Figure 19. Forward Characteristics Figure 20. Typical Reverse Current vs.
Reverse Voltage
80
[A]
F
TJ = 125oC
10
TJ = 25oC
TJ = 75oC
200
100
TJ = 125oC
10
[µA]
R
1
TJ = 75oC
FGH40N65UFD 600V, 40A Field Stop IGBT
1
Forward Current, I
0.2
01234
Forward Voltage, VF [V]
TC = 25oC
TC = 75oC
TC = 125oC
0.1
Reverse Current , I
0.01
50 200 400 600
TJ = 25oC
Reverse Voltage, VR [V]
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
100
[nC]
rr
80
200A/µs
60
di/dt = 100 A/µs
40
Stored Recovery Charge, Q
20
510203040
Forward Curre n t, IF [A]
60
[ns]
rr
50
di/dt = 100A/µs
200A/µs
40
Reverse Recovery Time, t
30
510203040
Forward Cu rrent, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
FGH40N65UFD Rev. A1
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zthjc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
P
DM
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
7 www.fairchildsemi.com
t
1
t
2
C
Page 8
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
FGH40N65UFD 600V, 40A Field Stop IGBT
FGH40N65UFD Rev. A1
Dimensions in Millimeters
8 www.fairchildsemi.com
Page 9
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
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The datasheet is for reference information only.
Rev. I40
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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