Page 1
tm
FGH40N60SMDF
G
E
C
600V, 40A Field Stop IGBT
FGH40N60SMDF 600V, 40A Field Stop IGBT
March 2011
Features
• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for easy parallel operating
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• Tighten Parameter Distribution
• RoHS compliant
=1.9V(Typ.) @ IC = 40A
CE(sat)
Applications
• Solar Inverter, UPS, SMPS, PFC
• Induction Heating
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Solar
Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential.
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM (1)
P
D
Operating Junction Temperature -55 to +175
T
J
T
stg
T
L
Notes:
1: Repetitive rating: Pulse width limited by max. junction te mperature
Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC 80 A
Collector Current @ T
Pulsed Collector Current 120 A
Diode Forward Current @ TC = 25oC 40 A
Diode Forward Current @ T
Pulsed Diode Maximum Forward Current 120 A
Maximum Power Dissipation @ TC = 25oC 349 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +175
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC 40 A
C
= 100oC 20 A
C
= 100oC 174 W
C
300
o
C
o
C
o
C
©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH40N60SMDF Rev. B1
Page 2
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.43
θJC
(Diode) Thermal Resistance, Junction to Case - 1.45
R
θJC
R
θJA
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FGH40N60SMDF FGH40N60SMDF TO-247 - - 30
FGH40N60SMDF 600V, 40A Field Stop IGBT
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
ΔBV
ΔT
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 1.56 2.34 mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss - 2.7 - mJ
ts
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA 600 - - V
Temperature Coefficient of Breakdown
CES
Voltage
J
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 250μA
GE
CES
GES
- 0.6 - V/
, VGE = 0V - - 250 μA
, VCE = 0V - - ±400 nA
G-E Threshold Voltage IC = 250μA, VCE = VGE 3.5 4.5 6.0 V
I
= 40A, VGE = 15V - 1.9 2.5 V
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 180 - pF
Reverse Transfer Capacitance - 50 - pF
Turn-On Delay Time
C
= 40A, VGE = 15V,
I
C
= 175oC
T
C
= 30V, VGE = 0V,
V
CE
f = 1MHz
- 2.1 -
- 1880 - pF
- 12 16 ns
Rise Time - 20 28 ns
Turn-Off Delay Time - 92 120 ns
Fall Time - 13 17 ns
Turn-On Switching Loss - 1.3 2.0 mJ
V
= 400V, IC = 40A,
CC
R
G
= 6Ω, V
GE
= 15V,
Inductive Load, T
= 25oC
C
Turn-Off Switching Loss - 0.26 0.34 mJ
Turn-On Delay Time
- 15 - ns
Rise Time - 22 - ns
Turn-Off Delay Time - 116 - ns
Fall Time - 16 - ns
Turn-On Switching Loss - 2.1 - mJ
V
= 400V, IC = 40A,
CC
R
= 6Ω, V
G
Inductive Load, T
GE
= 15V,
= 175oC
C
Turn-Off Switching Loss - 0.6 - mJ
o
C
V
FGH40N60SMDF Rev. B1
2 www.fairchildsemi.com
Page 3
Electrical Characteristics of the IGBT (Continued)
Symbol Parameter Test Conditions Min. Typ. Max Units
Q
g
Q
ge
Q
gc
Total Gate Charge
V
= 400V, IC = 40A,
Gate to Emitter Charge - 13 20 nC
Gate to Collector Charge - 58 90 nC
CE
= 15V
V
GE
- 119 180 nC
FGH40N60SMDF 600V, 40A Field Stop IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25oC - 1.3 1.7
V
FM
E
rec
t
rr
Q
rr
Diode Forward Voltage IF = 20A
Reverse Recovery Energy
Diode Reverse Recovery Time
=20A, dIF/dt = 200A/μs
I
F
Diode Reverse Recovery Charge
C
= 175oC - 1.15 -
T
C
T
= 175oC - 138 - uJ
C
T
= 25oC - 70 100
C
= 175oC - 210 -
T
C
= 25oC - 250 350
T
C
= 175oC - 1875 -
T
C
nC
V
ns
FGH40N60SMDF Rev. B1
3 www.fairchildsemi.com
Page 4
FGH40N60SMDF 600V, 40A Field Stop IGBT
0246
0
20
40
60
80
100
120
VGE = 8V
20V
TC = 25oC
15V
12V
10V
Collector Current, I
C
[A]
Collecto r-E mitter Voltage , VCE [V]
0246
0
20
40
60
80
100
120
VGE = 8V
20V
TC = 175oC
15V
12V
10V
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
01234
0
20
40
60
80
100
120
Comm o n Emitter
VGE = 15V
TC = 25oC
TC = 175oC
Collector Current, I
C
[A]
Collector-Emitter Voltag e , VCE [V]
024681012
0
30
60
90
120
Com mon Emit t e r
VCE = 20V
TC = 25oC
TC = 175oC
Collector Current, I
C
[A]
Gate-Emitter Voltage,VGE [V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
80A
40A
IC = 20A
Common Emitter
VGE = 15V
Collector-Emitter Voltage, V
CE
[V]
Collector-EmitterCase Temperature, TC [oC]
4 8 12 16 20
0
4
8
12
16
20
IC = 20A
40A
80A
Common Emitter
TC = -40oC
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, VGE [V]
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
3.0
FGH40N60SMDF Rev. B1
GE
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics
4 8 12 16 20
0
4
8
12
16
20
80A
IC = 20A
40A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 20
0
4
8
12
16
20
IC = 20A
40A
80A
Common Emitter
TC = 25oC
Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, VGE [V]
0.1 1 10
0
1000
2000
3000
4000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
C
res
C
oes
C
ies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
30
0 40 80 120
0
3
6
9
12
15
400V
Common Emitter
TC = 25oC
300V
VCC = 200V
Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Qg [nC]
1 10 100 1000
0.01
0.1
1
10
100
1ms
10 ms
DC
*Notes:
1. T
C
= 25oC
2. T
J
= 175oC
3. Single Pulse
10μs
100μs
Collector Current, I
c
[A]
Collector-Emitter Voltage, VCE [V]
0 1020304050
1
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
t
d(on)
t
r
Switching Time [ns]
Gate Resistance, RG [Ω]
FGH40N60SMDF 600V, 40A Field Stop IGBT
Figure 7. Saturation Voltage vs. V
Figure 8. Saturation Voltage vs. V
GE
GE
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
300
FGH40N60SMDF Rev. B1
5 www.fairchildsemi.com
Page 6
Typical Performance Characteristics
0 1020304050
1
10
100
Common Emit t e r
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
t
d(off)
t
f
Switching Time [ns]
Gate Resistance, RG [Ω]
20 30 40 50 60 70 80
1
10
100
1000
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
t
r
t
d(on)
Switching Time [ns]
Collector Current, IC [A]
20 30 40 50 60 70 80
1
10
100
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
t
d(off)
t
f
]
0 1020304050
0.1
1
5
Common Emitter
VCC = 400V, VGE = 15V
IC = 40A
TC = 25oC
TC = 175oC
E
on
E
off
Switching Loss [mJ]
[Ω]
20 30 40 50 60 70 80
0.1
1
6
Common Emitter
VGE = 15V, RG = 6Ω
TC = 25oC
TC = 175oC
E
on
E
off
Switching Loss [mJ]
Collector Curre nt , IC [A]
1 10 100 1000
1
10
100
200
Safe Operating A rea
VGE = 15V, TC = 175oC
Collector Current, I
C
[A]
Collector-E mitter Voltage, VCE [V]
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000
FGH40N60SMDF 600V, 40A Field Stop IGBT
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
1000
Switching Time [ns]
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
FGH40N60SMDF Rev. B1
Collector Current, IC [A
Gate Resistance, R
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
25 50 75 100 125 150 175
10
20
30
40
50
60
70
80
Common Emitter
VGE = 15V
Collector Current, I
C
[A]
Collector-EmitterCase Temperature, TC [oC]
1k 10k 100k 1M
0
10
20
30
40
50
60
70
80
90
100
110
120
Tc = 75oC
Square Wave
TJ < 175oC, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 6Ω
Collector Current, I
C
[A]
Switching Frequency, f [Hz]
Tc = 100oC
0 0.5 1.0 1.5 2.0 2.5
1
10
100
TC = 25oC
TC = 175oC
Forward Voltage, VF [V]
Forward Current, I
F
[A]
TC = 25oC
TC = 175oC
0 100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
TC = 25oC
TC = 150oC
TC = 75oC
Reverse Current, I
CES
[uA]
Reverse Voltage,VR [V]
0 5 10 15 20 25 30 35 40 45
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
TC = 25oC
TC = 175oC
di/dt = 200A/μs
di/dt = 100A/μs
rr
Forwad Current, IF [A]
0 5 10 15 20 25 30 35 40 45
0
50
100
150
200
250
300
350
TC = 25oC
TC = 175oC
di/dt = 200A/μs
di/dt = 100A/μs
Reverse Recovery Time, t
rr
[ns]
Forward Current, IF [A]
Figure 19. Current Derating Figure 20. Load Current Vs. Frequency
90
Figure 21. Forward Characteristics Figure 22. Reverse Current
FGH40N60SMDF 600V, 40A Field Stop IGBT
Figure 23. Stored Charge Figure 24. Reverse Recovery Time
2750
[nC]
FGH40N60SMDF Rev. B1
Stored Recovery Charge, Q
400
7 www.fairchildsemi.com
Page 8
Typical Performance Characteristics
1E-5 1E-4 1E-3 0.01 0.1 1
0.001
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2
Figure 25.Transient Thermal Impedance of IGBT
FGH40N60SMDF 600V, 40A Field Stop IGBT
FGH40N60SMDF Rev. B1
8 www.fairchildsemi.com
Page 9
Mechanical Dimensions
TO - 247AB (FKS PKG CODE 001)
FGH40N60SMDF 600V, 40A Field Stop IGBT
FGH40N60SMDF Rev. B1
9 www.fairchildsemi.com
Page 10
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
AX-CAP™*
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
®
®
®
®
®
®
*
®
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
Power-SPM™
PowerTrench
SM
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
®
®
™
®
®
®
®*
The Power Franchise
The Right Technology for Your Success™
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT
μSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
®
*
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FGH40N60SMDF 600V, 40A Field Stop IGBT
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in th e industry. All manuf actures of semiconductor p roducts are exper iencing counterfeiti ng of their
parts. Customers who inadvertently purchase count erfeit p art s experience many pr oble ms such as l o ss of bra nd repu tation , su bsta n dard pe rfo rmance, f aile d
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild str ongly encourages customers t o purchase Fairchild par ts either d irectly from Fairchi ld or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
committed to combat this global problem and encourage our customers to do their part in stopping this pr actice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FGH40N60SMDF Rev. B1
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I53
www.fairchildsemi.com10
Loading...