Page 1
September 2008
FGH20N60SFD 600V, 20A Field Stop IGBT
FGH20N60SFD
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
=2.2V @ IC = 20A
CE(sat)
E
C
G
COLLECTOR
(FLANGE)
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduction and switching losses are essential.
C
G
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Collector to Emitter Voltage 600 V
Gate to Emitter Voltage ± 20 V
Collector Current @ TC = 25oC40 A
Collector Current @ T
Pulsed Collector Current
Maximum Power Dissipation @ TC = 25oC165 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC20 A
C
@ T
= 25oC
C
= 100oC66 W
C
60 A
300
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.76
θJC
(Diode) Thermal Resistance, Junction to Case - 2.51
R
θJC
R
θJA
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
o
C
o
C
o
C
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH20N60SFD Rev. A
Page 2
Package Marking and Ordering Information
FGH20N60SFD 600V, 20A Field Stop IGBT
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGH20N60SFD FGH20N60SFDTU TO-247 Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
∆BV
∆T
J
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V
Temperature Coefficient of Breakdown
CES
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 250µA
GE
CES
GES
-0.6-V/
, VGE = 0V - - 250 µA
, VCE = 0V - - ±400 nA
G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V
= 20A, VGE = 15V -2.22.8V
I
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 110 - pF
C
= 20A, VGE = 15V,
I
C
T
= 125oC
C
V
= 30V, VGE = 0V,
CE
f = 1MHz
-2.4-
- 940 - pF
Reverse Transfer Capacitance - 40 - pF
o
C
V
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 0.53 - mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 0.69 - mJ
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time - 16 - ns
Turn-Off Delay Time - 90 - ns
Fall Time - 24 48 ns
Turn-On Switching Loss - 0.37 - mJ
= 400V, IC = 20A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 25oC
C
Turn-Off Switching Loss - 0.16 - mJ
Turn-On Delay Time
Rise Time - 16 - ns
Turn-Off Delay Time - 95 - ns
Fall Time - 28 - ns
Turn-On Switching Loss - 0.4 - mJ
= 400V, IC = 20A,
V
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 125oC
C
Turn-Off Switching Loss - 0.28 - mJ
Total Gate Charge
V
= 400V, IC = 20A,
Gate to Emitter Charge - 7 - nC
Gate to Collector Charge - 33 - nC
CE
V
= 15V
GE
-13-ns
-12-ns
-65-nC
FGH20N60SFD Rev. A
2 www.fairchildsemi.com
Page 3
FGH20N60SFD 600V, 20A Field Stop IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25oC- 1.9 2.5
V
FM
t
rr
Q
rr
Diode Forward Voltage IF = 10A
Diode Reverse Recovery Time
=10A, dIES/dt = 200A/µs
I
ES
Diode Reverse Recovery Charge
C
= 125oC- 1.7 -
T
C
T
= 25oC- 34 -
C
= 125oC- 57 -
T
C
T
= 25oC- 41 -
C
= 125oC- 96 -
T
C
nC
V
ns
FGH20N60SFD Rev. A
3 www.fairchildsemi.com
Page 4
FGH20N60SFD 600V, 20A Field Stop IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
[A]
C
60
40
TC = 25oC
15V
20V
12V
10V
[A]
C
60
40
TC = 125oC
15V
20V
12V
10V
20
Collector Current, I
0
0.01.53.04.56.0
VGE = 8V
Collector-Emitter Voltage, VCE [V]
20
Collector Current, I
0
0.01.53.04.56.0
Collector-Emitter Voltage, VCE [V]
VGE = 8V
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
60
Common Emitter
VGE = 15V
TC = 25oC
[A]
TC = 125oC
C
40
20
Collector Current, I
0
012345
Collector-Emitter Voltage, VCE [V]
60
Common Emit t e r
VCE = 20V
TC = 25oC
[A]
TC = 125oC
C
40
20
Collector Current, I
0
4681012
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
4
Common Emitter
VGE = 15V
[V]
CE
3
2
Collector-Emitter Voltage, V
1
25 50 75 100 125
Collector-Emitter Case Temperature, TC [oC]
FGH20N60SFD Rev. A
40A
20A
IC = 10A
20
[V]
CE
16
12
8
4
Collector-Emitter Voltage, V
0
0 4 8 121620
20A
IC = 10A
Gate-Emitter Vo ltag e, VGE [V]
4 www.fairchildsemi.com
40A
GE
Common Emitter
TC = -40oC
Page 5
Typical Performance Characteristics
FGH20N60SFD 600V, 20A Field Stop IGBT
Figure 7. Saturation Voltage vs. V
[V]
CE
20
16
12
Common Emitter
TC = 25oC
Figure 8. Saturation Voltage vs. V
GE
20
[V]
16
CE
12
GE
Common Emitter
TC = 125oC
8
40A
4
Collector-Emitter Voltage, V
0
0 4 8 121620
20A
IC = 10A
Gate-Emitter Vo ltag e, VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
2500
2000
1500
C
ies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
8
20A
4
Collector-Emitter Voltage, V
0
0 4 8 121620
IC = 10A
40A
Gate-Emitter Voltage, VGE [V]
15
Common Emitter
TC = 25oC
12
[V]
GE
9
VCC = 100V
300V
200V
6
Capacitance [pF]
1000
C
oes
500
0
0.1 1 10
C
res
Collector-Emitter Voltage, VCE [V]
30
3
Gate-Emitter Voltag e, V
0
020406080
Gate Ch a r g e , Qg [nC]
Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
10
[A]
c
1
Single Nonrepetitive
0.1
Collector Current, I
0.01
1 10 100 1000
= 25oC
Pulse T
C
Curves must be derated
linearly with increase
in temperature
100µs
1ms
10 ms
DC
Collector-Emitter Voltage, VCE [V]
10µs
100
t
r
Common Emitter
t
Switching Time [ns]
10
5
0 102030405060
d(on)
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
FGH20N60SFD Rev. A
5 www.fairchildsemi.com
Page 6
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Gate Resistance Collector Current
1000
Comm o n Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
100
t
d(off)
200
Common Emitter
VGE = 15V, RG = 10Ω
100
TC = 25oC
TC = 125oC
t
r
FGH20N60SFD 600V, 20A Field Stop IGBT
t
Switching Time [ns]
10
0 102030405060
f
Gate Resistance, RG [Ω]
10
Switching Time [ns]
3
0 10203040
Collector Current, IC [A]
t
d(on)
Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs.
Collector Current Gate Resistance
300
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
t
100
Switching Time [ns]
10
0 10203040
d(off)
t
f
Collector Cu rre n t, IC [A]
3
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
1
TC = 125oC
E
on
Switching Loss [mJ]
0.1
0 102030405060
E
off
Gate Resistance, RG [Ω]
Figure 17. Switching Loss vs. Figure 18. Turn off Switching
Collector Current SOA Characteristics
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
0.1
Switching Loss [mJ]
0.02
0 10203040
FGH20N60SFD Rev. A
Collector Cu rre n t, IC [A]
E
on
E
off
80
[A]
C
10
Collector Current , I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
FGH20N60SFD 600V, 20A Field Stop IGBT
Figure 19. Forward Characteristics Figure 20. Reverse Current
40
TJ = 125oC
TJ = 75oC
10
[A]
F
1
Forward Current, I
0.1
01234
Forward Voltage, VF [V]
TJ = 25oC
100
10
[µA]
R
1
TC = 125oC
TC = 75oC
0.1
0.01
Reverse Current , I
1E-3
0 100 200 300 400 500 600
TC = 25oC
Reverse Voltage, VR [V]
Figure 21. Stored Charge Figure 22. Reverse Recovery Time
60
[nC]
50
rr
200A/µs
40
30
di/dt = 100A/µs
60
50
[ns]
rr
di/dt = 100 A/µs
40
30
200A/µs
20
Stored Recovery Charge, Q
10
0 5 10 15 20
Forward Curre n t, IF [A]
20
Reverse Recovery Time, t
10
0 5 10 15 20
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
Thermal Response [Zthjc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
2
C
FGH20N60SFD Rev. A
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
TO247AB (FKS PKG CODE 001)
FGH20N60SFD 600V, 20A Field Stop IGBT
FGH20N60SFD Rev. A
8 www.fairchildsemi.com
Page 9
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tm
®
tm
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not intended to be an exhaustive list of all such trademarks.
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™
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FAST
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FlashWriter
®
®
®
®
®
*
®
* EZSWITCH™ and FlashWriter
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®
FRFET
Global Power Resource
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IntelliMAX™
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MICROCOUPLER™
MicroFET™
MicroPak™
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Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
®
SM
PDP SPM™
Power-SPM™
PowerTrench
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QFET
QS™
Quiet Series™
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Saving our world, 1mW at a time™
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SPM
STEALTH™
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®
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®
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®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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VisualMax™
®
FGH20N60SFD 600V, 20A Field Stop IGBT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accord ance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary dat a will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35
FGH20N60SFD Rev. A
www.fairchildsemi.com9
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