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FGAF40N60UF
IGBT
FGAF40N60UF
Ultrafast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
TO-3PF
G
C
E
Absolute Maximum Ratings T
Symbol Description FGAF40N60UF Units
V
CES
V
GES
I
C
I
CM (1)
P
D
T
Operating Junction Temperature -55 to +150 °C
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C40 A
Collector Current @ T
Pulsed Collector Current 160 A
Maximum Power Dissipation @ TC = 25°C 100 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
= 25°C unless otherwise noted
C
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
G
G
= 100°C20 A
C
= 100°C40 W
C
300 °C
= 2.3 V @ IC = 20A
CE(sat)
C
C
E
E
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction-to-Case -- 1.2 °C/W
θJC
R
θJA
©2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. A
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
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FGAF40N60UF
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆B
∆T
I
CES
I
GES
CES
VCES
J
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
T emperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
V
= 0V, IC = 1mA -- 0.6 -- V/°C
GE
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ± 100 nA
GES
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage IC = 20mA, VCE = V
,
Collector to Emitter
Saturation Voltage
I
I
= 20A
C
= 40A
C
VGE = 15V
,
VGE = 15V
GE
3.5 5.1 6.5 V
-- 2.3 3.0 V
-- 3.1 -- V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance -- 170 -- pF
Reverse Transfer Capacitance -- 50 -- pF
= 30V, VGE = 0V,
V
CE
f = 1MHz
-- 1075 -- pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
Total Switching Loss -- 600 1000 uJ
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss -- 810 1200 uJ
E
ts
Q
g
Q
ge
Q
gc
L
e
Turn-On Delay Time
-- 15 -- ns
Rise Time -- 30 -- ns
Turn-Off Delay Time -- 65 1 3 0 ns
Fall Time -- 35 100 ns
Turn-On Switching Loss -- 470 -- uJ
V
= 300 V, IC = 20A,
CC
R
= 10Ω, V
G
GE
Inductive Load, T
= 15V,
= 25°C
C
Turn-Off Switching Loss -- 130 -- uJ
Turn-On Delay Time
-- 30 -- ns
Rise Time -- 37 -- ns
Turn-Off Delay Time -- 110 200 ns
Fall Time -- 80 250 ns
Turn-On Switching Loss -- 500 -- uJ
= 300 V, IC = 20A,
V
CC
= 10Ω, V
R
G
GE
Inductive Load, T
= 15V,
= 125°C
C
Turn-Off Switchi n g Loss -- 310 -- uJ
Total Gate Charge
Gate-Emitter Charge -- 20 30 nC
Gate-Collector Charge -- 25 40 nC
= 300 V, IC = 20A,
V
CE
V
GE
= 15V
-- 77 150 nC
Internal Emitter Inductance Measured 5mm from PKG -- 14 -- nH
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. A
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FGAF40N60UF
160
Common E mitter
℃
Tc = 25
120
(A)
c
80
40
Collector Current, I
0
02468
20V
VGE = 10V
Collector-Emitter Voltage,VCE(V)
15V
12V
80
70
60
50
40
30
20
Collector Current , Ic (A)
10
0
0.5
Common Emitter
V
=15V
GE
Tc= 25℃
Tc= 125℃
110
Collector-Emitter Voltage, VCE(V)
Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage
4
Common Emitter
Vge=15V
3
[V]
CE
2
1
40A
20A
Ic=10A
Collector - Emitter Voltage, V
0
0306090120150
Case Temperature, TC [℃]
Characteristics
30
25
20
15
10
Load Current [A]
5
Duty cycle : 5 0%
Tc = 100
Powe Dissipation = 24W
0
0.1 1 10 100 1000
Vcc = 300V
Load Current : peak of square wave
℃
Frequency [kHz]
Fig 3. Saturation Voltage vs.
Case Temperature at Variant Current Level
20
[V]
16
CE
12
8
4
Collector - Emitter Voltage, V
0
0 4 8 12 16 20
IC = 10A
Gate - Emitter Voltage, VGE [V]
Fig 5. Satur ation Voltage vs. V
©2004 Fairchild Semiconductor Corporation
20A
40A
Common Emitter
℃
= 25
T
C
Fig 6. Saturation Voltage vs. VGE
GE
Fig 4. Load Current vs. Frequency
20
[V]
16
CE
12
8
4
Collector - Emitter Voltage, V
0
0 4 8 121620
Ic=10A
20A
Gate - Emitter Voltage, VGE [V]
40A
Common Emitter
℃
= 125
T
C
FGAF40N60UF Rev. A
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FGAF40N60UF
3000
2500
2000
1500
1000
Capacitance (pF)
500
0
110
Cies
Coes
Cres
Common Emitter
= 0V, f = 1MHz
V
GE
℃
= 25
T
C
30
Collector-Emitter Voltage, VCE (V)
Fig 7. Capaci tance Chara cteristi cs
1000
Common Emitter
Vcc=300V,V
Ic=20A
Tc = 25℃
Tc = 125℃
100
Switching Time (ns)
20
110100
= ±15V
GE
Gate Resistance, RG( Ω)
Toff
Tf
Tf
200
300
Common Emitter
Vcc=300V,VGE= ±15V
Ic=20A
Tc = 25℃
Tc = 125℃ - - - -
100
Ton
Tr
Switching Time (ns)
10
110100
200
Gate Resistance, RG( Ω)
Fig 8. Turn-On Characteristics vs.
Gate Resistance
2000
Common Emitter
Vcc=300V,V
Ic=20A
1000
Tc = 25℃
Tc = 125℃
Switching Time (uJ)
100
50
1 10 100
=±15V
GE
Gate Resistance, RG( Ω)
Eon
Eoff
200
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
100
Ton
Switc h in g Ti m e (n s )
10
Tr
10 15 20 25 30 35 40
Collector Current, Ic (A)
Fig 11. Tur n-On Characteristics vs.
Collector Current
©2004 Fairchild Semiconductor Corporation
Common Emitter
V
= 300V, VGE = ±15V
CC
= 10
R
G
TC = 25℃
T
= 125℃
C
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
= 300V, VGE = ±15V
V
CC
= 10
R
Ω
G
TC = 25℃
T
= 125℃
C
Toff
100
Toff
Switchin g T im e [n S]
Tf
Ω
Tf
20
10 15 20 25 30 35 40
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGAF40N60UF Rev. A
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FGAF40N60UF
3000
1000
Eon
Eoff
100
Eoff
Sw itc h in g T ime (uJ)
10
10 15 20 25 30 35 40
Common Emitter
V
= 300V, VGE = ±15V
CC
= 10
Ω
R
G
TC = 25℃
= 125℃
T
C
Collec to r C u rre n t , Ic (A)
Fig 13. Switching Loss vs. Collector Current
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
10
1ms
50µs
100µs
15
Common Emitter
Ω
=15
R
L
(Tc=25 ℃)
12
(V)
GE
9
6
3
Gate-Em itter V o ltage , V
0
0 306090120
300V
200V
Vcc=100V
Gate Charge, Qg (nC)
Fig 14. Gate Charge Char ac te ri st i cs
500
100
[A]
C
10
DC Operation
1
Single Nonrepetitive
Collector C u rren t, Ic [A ]
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
1 10 100 1000
Collector - Emitter V o ltag e, VCE [V]
Fig 15. SOA Characteristics
1
0.5
0.2
0.1
0.1
0.05
0.02
Thermal Response [Zthjc]
0.01
0.01
single pulse
1E-5 1E-4 1E-3 0.01 0.1 1 10
1
Collector Current, I
Safe Operating Area
0.1
1 10 100 1000
VGE=20V, TC=100oC
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
×
Zthjc + T
C
©2004 Fairchild Semiconductor Corporation
FGAF40N60UF Rev. A
Page 6
Package Dimensions
FGAF40N60UF
TO-3PF
5.50 ±0.20
26.50 ±0.20
4.50 ±0.20
14.50 ±0.20
16.50 ±0.20
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
2.00 ±0.20
15.50 ±0.20
ø3.60 ±0.20
2.50 ±0.20
2.00 ±0.20
10.00 ±0.20
0.85 ±0.03
16.50 ±0.20
3.00 ±0.20
(1.50)
10°
23.00 ±0.20
22.00 ±0.20
1.50 ±0.20
2.00 ±0.20
3.30
14.80 ±0.20
©2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. A
+0.20
0.75
–0.10
5.45TYP
[5.45
±0.30]
3.30 ±0.20
2.00 ±0.20
5.45TYP
[5.45
±0.30]
5.50 ±0.20
0.90
±0.20
+0.20
–0.10
Dimensions in Millimeters
Page 7
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As used herein:
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete Not In Production This datasheet contains specifications on a product
©2004 Fairchild Semiconductor Corporation Rev. I8
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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