Datasheet FGA60N65SMD Specification

Is Now Part of

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FGA60N65SMD

G

E

C

GEC

TO-3PN

650 V, 60 A Field Stop IGBT

FGA60N65SMD — 650 V, 60 A Field Stop IGBT

October 2013

Features

• Maximum Junction Temperature : TJ = 175oC

• Positive Temperature Co-efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: V

• Fast Switching : E

• Tighten Parameter Distribution

•RoHS Compliant

OFF

= 7.5 uJ/A

= 1.9 V(Typ.) @ IC = 60 A

CE(sat)

Applications

• Solar Inverter, UPS, Welder, PFC, Telecom, ESS

Absolute Maximum Ratings

General Description

Using novel field stop IGBT technology, Fairchild’ s new series of field stop 2 for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are

nd

generation IGBTs offer the optimum performance

essential.

Symbol Description Ratings Unit

V

CES

V

GES

I

C

I

CM (1)

I

F

I

FM (1)

P

D

T

Operating Junction Temperature -55 to +175

J

T

stg

T

L

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

FGA60N65SMD Rev. C2

Collector to Emitter Voltage 650 V Gate to Emitter Voltage ± 20 V Transient Gate to Emitter Voltage ± 30 V Collector Current @ TC = 25oC 120 A Collector Current @ T Pulsed Collector Current 180 A Diode Forward Current @ TC = 25oC 60 A Diode Forward Current @ T Pulsed Diode Maximum Forward Current 180 A Maximum Power Dissipation @ TC = 25oC 600 W Maximum Power Dissipation @ T

Storage Temperature Range -55 to +175 Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

= 100oC 60 A

C

= 100oC 30 A

C

= 100oC 300 W

C

300

o o

o

C C

C

Thermal Characteristics

Symbol Parameter Typ. Max. Unit

R

(IGBT) Thermal Resistance, Junction to Case - 0.25

θJC

(Diode) Thermal Resistance, Junction to Case - 1.1

R

θJC

R

θJA

Thermal Resistance, Junction to Ambient - 40

o

C/W

o

C/W

o

C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FGA60N65SMD FGA60N65SMD TO-3PN - - 30

FGA60N65SMD — 650 V, 60 A Field Stop IGBT

Electrical Characteristics of the IGBT T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BV

CES

ΔBV ΔT

I

CES

I

GES

On Characteristics

V

GE(th)

V

CE(sat)

Dynamic Characteristics

C

ies

C

oes

C

res

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

Total Switching Loss - 1.99 2.91 mJ

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

Total Switching Loss - 2.86 - mJ

ts

Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250μA 650 - - V Temperature Coefficient of Breakdown

CES

Voltage

J

Collector Cut-Off Current VCE = V G-E Leakage Current VGE = V

V

= 0V, IC = 250μA

GE

CES

GES

- 0.6 - V/

, VGE = 0V - - 250 μA

, VCE = 0V - - ±400 nA

G-E Threshold Voltage IC = 250μA, VCE = VGE 3.5 4.5 6.0 V

I

= 60A, VGE = 15V - 1.9 2.5 V

Collector to Emitter Saturation Voltage

Input Capacitance Output Capacitance - 270 - pF Reverse Transfer Capacitance - 85 - pF

Turn-On Delay Time

C

= 60A, VGE = 15V,

I

C

= 175oC

T

C

= 30V, VGE = 0V,

V

CE

f = 1MHz

- 2.1 -

- 2915 - pF

- 18 27 ns Rise Time - 47 70 ns Turn-Off Delay Time - 104 146 ns Fall Time - 50 68 ns Turn-On Switching Loss - 1.54 2.31 mJ

V

= 400V, IC = 60A,

CC

R

G

= 3Ω, V

GE

= 15V,

Inductive Load, T

= 25oC

C

Turn-Off Switching Loss - 0.45 0.60 mJ

Turn-On Delay Time

- 18 - ns Rise Time - 41 - ns Turn-Off Delay Time - 115 - ns Fall Time - 48 - ns Turn-On Switching Loss - 2.08 - mJ

V

= 400V, IC = 60A,

CC

RG = 3Ω, V Inductive Load, T

GE

= 15V,

= 175oC

C

Turn-Off Switching Loss - 0.78 - mJ

o

C

V

FGA60N65SMD Rev. C2

Electrical Characteristics of the IGBT (Continued)

Symbol Parameter Test Conditions Min. Typ. Max Unit

Q

g

Q

ge

Q

gc

Total Gate Charge

V

= 400V, IC = 60A,

Gate to Emitter Charge - 20 30 nC Gate to Collector Charge - 91 137 nC

CE

= 15V

V

GE

- 189 284 nC

FGA60N65SMD — 650 V, 60 A Field Stop IGBT

Electrical Characteristics of the Diode T

= 25°C unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max Unit

V

FM

E

rec

t

rr

Q

rr

Diode Forward Voltage IF = 30A

Reverse Recovery Energy Diode Reverse Recovery Time

=30A,

I

F

/dt = 200A/μs

dI

F

Diode Reverse Recovery Charge

TC = 25oC TC = 175oC TC = 175oC TC = 25oC TC = 175oC TC = 25oC TC = 175oC

- 2.1 2.6

- 1.7 -

- 127 - uJ

- 47 -

- 212 -

- 87 -

- 933 -

V

ns

nC

FGA60N65SMD Rev. C2

FGA60N65SMD — 650 V, 60 A Field Stop IGBT

0246

0

30

60

90

120

150

180

VGE = 8V

20V

TC = 25oC

15V

12V

10V

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

0246

0

30

60

90

120

150

180

VGE = 8V

20V

TC = 175oC

15V

12V

10V

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

012345

0

30

60

90

120

150

180

Common Emitter VGE = 15V

TC = 25oC TC = 175oC

Collector Current, I

C

[A]

Collector-Emitter Voltage, VCE [V]

25 50 75 100 125 150 175

1.0

1.5

2.0

2.5

3.0

120A

60A

IC = 30A

Common Emitter VGE = 15V

Collector-Emitter Voltage, V

CE

[V]

Case Temperature, TC [oC]

4 8 12 16 20

0

4

8

12

16

20

IC = 30A

60A

120A

Common Emitter TC = 25oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Em i tte r Voltage, VGE [V]

4 8 12 16 20

0

4

8

12

16

20

120A

IC = 30A

60A

Common Emitter TC = 175oC

Collector-Emitter Voltage, V

CE

[V]

Gate-Emitter Voltage, VGE [V]

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case Characteristics Temperature at Variant Current Level

3.5

Figure 5. Saturation Voltage vs. V

FGA60N65SMD Rev. C2

Figure 6. Saturation Voltage vs. V

GE

Typical Performance Characteristics

0.1 1 10

0

1000

2000

3000

4000

5000

6000

7000

Common Emitter VGE = 0V, f = 1MHz

TC = 25oC

C

res

C

oes

C

ies

Capacitance [pF]

Collector-Emitter Voltage, VCE [V]

30

04080120160200

0

3

6

9

12

15

400V

Common Emitter TC = 25oC

300V

VCC = 200V

Gate-Emitter Voltage, V

GE

[V]

Gate Ch a rge, Qg [nC]

0 1020304050

10

20

40

60

80

100

Common Emitter VCC = 400V, VGE = 15V

IC = 60A TC = 25oC TC = 175oC

t

d(on)

t

r

Switching Time [ns]

R

[Ω]

0 1020304050

10

100

1000

Common Emitter VCC = 400V, VGE = 15V

IC = 60A TC = 25oC TC = 175oC

t

d(off)

t

f

Switching Time [ns]

Gate Resistance, RG [Ω]

0306090120

1

10

100

1000

Common Emitter VGE = 15V, RG = 3Ω

TC = 25oC TC = 175oC

t

r

t

d(on)

Switching Time [ns]

Collector Current, IC [A]

0 1020304050

0.1

1

10

Common Emitter VCC = 400V, VGE = 15V

IC = 60A TC = 25oC TC = 175oC

E

on

E

off

Switching Loss [mJ]

[Ω]

Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics

Figure 9. Turn-on Characteristics vs. Figure 9. Turn-off Ch ara ct eri st ic s vs . Gate Resistance Gate Resistance

6000

FGA60N65SMD — 650 V, 60 A Field Stop IGBT

Gate Resistance,

Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs. Gate Resistance Collector Current

FGA60N65SMD Rev. C2

Gate Resistance, R

G

Typical Performance Characteristics

0306090120

1

10

100

Commo n Emitter VGE = 15V, RG = 3Ω

TC = 25oC TC = 175oC

t

d(off)

t

f

Switching Time [ns]

]

0 30 60 90 120

0.01

0.1

1

Common Emitter VGE = 15V, RG = 3Ω

TC = 25oC TC = 175oC

E

on

E

off

Switching Loss [mJ]

Collector Current, IC [A]

1 10 100 1000

0.01

0.1

1

10

100

300

1ms

10 ms

DC

*Notes:

1. T

C

= 25oC

2. T

J

= 175oC

3. Single Pulse

10μs

100μs

Collector Current, I

c

[A]

Collector-Emitter Voltage, VCE [V]

1k 10k 100k 1M

0

20

40

60

80

100

120

Vcc = 400 V Load Current : peak of square wave Duty cycle : 50%

Tc = 100oC Power Dissipation : 300 W

Collector Current, I

C

[A]

Switching Frequency, f [Hz]

Tc = 100oC

01234

1

10

100

200

TC = 175oC TC = 125oC TC = 75oC TC = 25oC

T

C

= 25

o

C

T

C

= 75

o

C

T

C

= 125

o

C

Forward Current, I

F

[A]

Forward Voltage, VF [V]

T

C

= 175

o

C

010203040

0

2

4

6

8

10

12

14

di/dt =100A/uS

TC = 25oC TC = 175oC

di/dt = 2 0 0 A/uS

Reverse Recovery Current, Irr [A]

Forward Current, IF [A]

Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.. Collector Current Collector Current

1000

Collector Cu r re nt, IC [A

Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics

10

FGA60N65SMD — 650 V, 60 A Field Stop IGBT

Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current

FGA60N65SMD Rev. C2

Typical Performance Characteristics

0 102030405060

0

200

400

600

800

1000

1200

didt =100A/uS

TC = 25oC TC = 175oC

didt = 200A/uS

Stored Recovery Charge, Qrr [nC]

Forward Current, IF [A]

015304560

0

50

200

300

didt =100A/uS

TC = 25oC TC = 175oC

didt = 200A/uS

Reverse Recovery Time, trr [ns]

Forward Current, IF [A]

1E-5 1E-4 1E-3 0.01 0.1 1

1E-3

0.01

0.1

0.5

0.01

0.02

0.1

0.05

0.2

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + T

C

0.5

t

1

P

DM

t

2

1E-5 1E-4 1E-3 0.01 0.1 1

0.005

0.01

0.1

1

3

0.01

0.02

0.1

0.05

0.2

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + T

C

0.5

t

1

P

DM

t

2

Figure 19. Reverse Recovery Time Figure 20. Stored Charge

400

1400

FGA60N65SMD — 650 V, 60 A Field Stop IGBT

Figure 21.Transient Thermal Impedance of IGBT

FGA60N65SMD Rev. C2

F i gu r e 2 2 . T r a n s i e n t Th e rm a l I m p e d a n c e of D io d e

Mechanical Dimensions

FGA60N65SMD — 650 V, 60 A Field Stop IGBT

Figure 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65

Package drawings are provided as a service to customers considering Fairchild co mponents. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor r epresentative to ver ify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

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Dimensions in Millimeters

FGA60N65SMD Rev. C2

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.

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Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I66

FGA60N65SMD Rev. C2

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