Page 1
tm
FGA50N100BNTD2
1000V, 50A NPT-Trench IGBT CO-PAK
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
February 2009
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
• Built-in Fast Recovery Diode
•RoHS Compliant
CE(sat)
= 2.5 V @ IC = 60A
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction and
switching characteristics as well as enhanced avalanche
ruggedness. These devices are well suited for micro-wave,
Induction heating (I-H) Jar, induction heater, home appliance.
Applications
Micro-Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home
Appliance.
C
G
G
C
E
TO-3P
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Collector to Emitter Voltage 1000 V
Gate to Emitter Voltage ± 25 V
Collector Current @ TC = 25oC50 A
Collector Current @ T
= 100oC35 A
C
Pulsed Collector Current 200 A
Diode Continuous Forward Current
@ T
= 100oC
C
15 A
Diode Maximum Forward Current 150 A
Maximum Power Dissipation @ TC = 25oC156 W
Maximum Power Dissipation @ T
= 100oC63 W
C
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
o
C
o
C
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.8
θJC
(DIODE) Thermal Resistance, Junction to Case - 1.2
R
θJC
R
θJA
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
Thermal Resistance, Junction to Ambient - 40.0
FGA50N100BNTD2 Rev. A
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGA50N100BNTD2 FGA50N100BNTD2 TO-3PN Rail / Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 - - V
Collector Cut-Off Current VCE = 1000V, VGE = 0V - - 1.0 mA
G-E Leakage Current VGE = ±25V, VCE = 0V - - ±500 nA
G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.5 7.0 V
= 10A, VGE = 15V -1.51.8V
I
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 260 - pF
Reverse Transfer Capacitance - 200 - pF
C
= 60A, VGE = 15V 2.5 2.9 V
I
C
= 60A, VGE = 15V,
I
C
T
= 125oC
C
-3.1- V
- 6000 - pF
V
= 10V, VGE = 0V,
CE
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
ge
Q
gc
Electrical Characteristics of the Diode T
V
FM
t
rr
I
R Instantaneous Reverse Current VRRM = 1000V - - 2
Turn-On Delay Time
V
= 600V, IC = 60A,
Rise Time - 68 - ns
Turn-Off Delay Time - 243 - ns
CC
R
= 10Ω, V
G
Inductive Load, T
GE
= 15V,
= 25oC
C
Fall Time - 65 100 ns
Total Gate Charge
V
= 600V, IC = 60A,
Gate to Emitter Charge - 45 - nC
Gate to Collector Charge - 95 - nC
Diode Forward Voltage
CE
V
= 15V, TC = 25oC
GE
= 25°C unless otherwise noted
C
I
= 15A - 2.9 3.2 V
F
= 60A - 4.0 4.7 V
I
F
Diode Reverse Recovery Time IF = 60A, di/dt = 100A/us
-34-ns
- 257 350 nC
-6075ns
µA
FGA50N100BNTD2 Rev. A
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
200
TC = 25oC
160
[A]
C
120
80
Collector Current, I
40
0
0246810
20V
15V
Collector-Emitter Voltage, VCE [V]
200
20V
15V
10V
9V
10V
TC = 125oC
160
9V
[A]
C
120
8V
7V
VGE = 6V
8V
7V
VGE = 6V
80
Collector Current, I
40
0
0246810
Collecto r-Emitter Voltag e, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
200
160
[A]
C
120
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
[A]
C
200
160
120
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
80
Collector Current, I
40
0
01234567
Collector-Emitter Voltage, VCE [V]
80
Collector Current, I
40
0
24681012
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
4.5
Common Emitter
VGE = 15V
[V]
CE
90A
60A
3.0
30A
IC = 10A
1.5
Collector-Emitter Voltage, V
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
20
[V]
CE
16
12
8
4
30A
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
IC = 10A
Gate-Emitter V o ltag e, VGE [V]
Common Emitter
TC = -40oC
60A
90A
GE
FGA50N100BNTD2 Rev. A
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Figure 7. Saturation Voltage vs. V
20
[V]
CE
16
Common Emitter
TC = 25oC
12
60A
8
4
30A
90A
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
IC = 10A
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
8000
6000
4000
C
ies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Figure 8. Saturation Voltage vs. V
GE
20
16
[V]
CE
12
60A
8
4
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
30A
IC = 10A
Gate-Emitter Voltage, VGE [V]
15
Common Emitter
TC = 25oC
12
[V]
GE
VCC = 200V
9
6
600V
GE
Common Emitter
TC = 125oC
90A
400V
Capacitance [pF]
2000
C
C
res
oes
0
110
30
Collector-Emitter Voltage, VCE [V]
3
Gate-Emitter Voltage, V
0
0 55 110 165 220 275
Gate C h a rge, Qg [nC]
Figure 11. SOA Characteristics Figure 12. Load Current vs. Frequency
500
100
[A]
c
10
1
*Notes:
Collector Current, I
0.1
1. T
= 25oC
C
2. T
= 150oC
J
3. Single Pulse
0.01
1101001000
Collector-Emitter Voltage, VCE [V]
FGA50N100BNTD2 Rev. A
10µs
100µs
1ms
10 ms
DC
3000
120
100
VCC = 600V
load Current : peak of square wave
80
60
Load Current [A]
40
Duty cycle : 50%
20
0
10
o
TC = 100
C
Power Dissipation = 63W
0
1
10
10
2
Frequency [kHz]
4 www.fairchildsemi.com
3
10
Page 5
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
300
2000
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
100
Switching Time [ns]
10
t
r
t
d(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
10 20 30 40 50
Gate Resistance, RG [Ω]
1000
100
Switching Time [ns]
10
10 20 30 40 50
t
d(off)
t
f
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current
200
100
Switching Time [ns]
10
10 20 30 40 50 60 70 80 90 100
t
r
t
d(on)
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Collector Cu rre n t, IC [A]
1000
Common Emitter
VGE = 15V, RG = 10Ω
100
TC = 25oC
TC = 125oC
Switching Time [ns]
10
10 20 30 40 50 60 70 80 90 100
Collector Cu rre n t, IC [A]
t
d(off)
t
f
Figure 17. Switching Loss vs. Gate Resistance Fig 18. Switching Loss vs. Collector Current
50
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
10
Switching Loss [mJ]
1
10 20 30 40 50
FGA50N100BNTD2 Rev. A
E
on
E
off
Gate Resistance, RG [Ω]
5 www.fairchildsemi.com
30
10
E
on
E
1
Switching Loss [mJ]
0.1
10 20 30 40 50 60 70 80 90 100
off
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
Collector Cu rre n t, IC [A]
Page 6
Typical Performance Characteristics
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
Fi gu re 19 . T ur n of f S w i t c h i n g S OA Ch ar ac te ri si cs F ig ur e 2 0. Fo rw ar d C ha ra ct er is ti cs
250
100
[A]
C
10
Collector Curre nt, I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
3000
200
100
TJ = 125oC
[A]
F
10
1
Forward Current, I
0.1
0123456
Forward Voltage, VF [V]
TJ = 25oC
TC = 25oC
TC = 125oC
Figure 21. Reverse Current Figure 22. Reverse Recovery Characteristics vs.
di/dt
300
100
10
[µA]
R
1
0.1
Reverse Current , I
0.01
1E-3
50 200 400 600 800 1000
Reverse Voltage, VR [V]
TJ = 125oC
TJ = 25oC
80
Trr
60
10
Reverse Recovery Current, Irr[A]
8
Irr
6
40
20
Reverse Recovery Time, Trr[ns]
0
20 40 60 80 100 120 140 160 180 200
di/dt[A /µs]
IF = 60A
T
= 25oC
C
4
2
0
Figure 23. Reverse Recovery Characteristic s vs .
Forward Current
80
Trr
Irr
70
Reverse Recovery Time, Trr [ns]
60
10 20 30 40 50 60
FGA50N100BNTD2 Rev. A
Forward Current,IF[A]
di/dt = 100A/µs
T
= 25oC
C
6
Reverse Recovery Current, I
4
rr
[A]
2
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
Figure 24.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zthjc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
2
C
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
FGA50N100BNTD2 Rev. A
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
TO-3PN
FGA50N100BNTD2 Rev. A
8 www.fairchildsemi.com
Page 9
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
FGA50N100BNTD2 1000V, 50A NPT-Trench IGBT CO-PAK
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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www.fairchildsemi.com, under Sales Support
.
Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semicondu ctor products a re experiencing counterfe iting of their
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FGA50N100BNTD2 Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplement ary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fair child Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
9
www.fairchildsemi.com
Rev. I38
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