Datasheet fga50n100bntd Datasheet

Page 1

November 2008

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK

General Description

Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for

Features

• High Speed Switching

• Low Saturation Voltage : V

• High Input Impedance

• Built-in Fast Recovery Diode

CE(sat)

= 2.5 V @ IC = 60A

Induction Heating ( I-H ) applications

Application

Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

Absolute Maximum Ratings T

Symbol Description FGA50N100BNTD Units

CES

GES

CM (1)

Operating Junction Temperature -55 to +150 °C

stg

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Collector-Emitter Voltage 1000 V Gate-Emitter Voltage ± 25 V Collector Current @ TC = 25°C50 A Collector Current @ T Pulsed Collector Current 200 A Diode Continuous Forward Current @ TC = 100°C15 A M a x i m u m P o w e r Di ssipation @ TC = 25°C 156 W Maximum Power Dissipation @ T

Storage Temperature Range -55 to +150 °C Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

TO-3P

= 25°C unless otherwise noted

= 100°C35 A

= 100°C63 W

300 °C

Thermal Characteristics

Symbol Parameter Typ. Max. Units

(IGBT) Thermal Resistance, Junction-to-Case -- 0.8 °C/W

θJC

(DIODE) Thermal Resistance, Junction-to-Case -- 2.4 °C/W

θJC

θJA

Thermal Resistance, Junction-to-Ambient -- 25 °C/W

CO-PAK Rev. A1

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Package Marking and Ordering Information

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK

Max Qty per Box

Device Marking Device Package

Packaging Type Qty per Tube

FGA50N100BNTD FGA50N100BNTDTU TO-3PN Rail / Tube 30ea -

Electrical Characteristics of IGBT T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV I

CES

GES

CES

Collector Emitter Breakdown Voltage Collector Cut-Off Current

= 1000V, VGE = 0V

G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA

1000 -- -- V

-- -- 1.0 mA

= 0V, IC = 1mA

On Characteristics

GE(th)

CE(sat)

G-E Threshold Voltage IC = 60mA, VCE = V

Collector to Emitter Saturation Voltage

= 10A, VGE = 15V -- 1.5 1.8 V

= 60A, VGE = 15V -- 2.5 2.9 V

4.0 5.0 7.0 V

Dynamic Characteristics

ies

oes

res

Input Capacitance Output Capacitance -- 260 -- pF Reverse Transfer Capacitance -- 200 -- pF

=10V, VGE = 0V,

f = 1MHz

-- 6000 -- pF

Switching Characteristics

d(on)

d(off)

Electrical Characteristics of DIODE T

Symbol Parameter Test Conditions Min. Typ. Max. Units

R Instantaneous Reverse Current VRRM = 1000V -- 0.05 2 uA

Turn-On Delay Time Rise Time -- 320 -- ns Turn-Off Delay Time -- 630 -- ns Fall Time -- 130 250 ns Total Gate Charge Gate-Emitter Charge -- 45 -- nC Gate-Collector Charge -- 95 -- nC

Diode Forward Voltage

= 600 V, IC = 60A,

= 51Ω, VGE=15V,

Resistive Load, T

= 600 V, IC = 60A,

= 15V , , TC = 25°C

= 25°C unless otherwise noted

= 15A -- 1.2 1.7 V

= 60A -- 1.8 2.1 V

= 25°C

-- 140 -- ns

-- 275 350 nC

Diode Reverse Recovery Time IF = 60A di/dt = 20 A/us 1.2 1.5 us

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT

CO-PAK Rev. A1

Page 3

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK

200

Common Emitter T

=25oC

160

[A]

120

Collector Current, I

012345

20V

15V

Co lle c t o r-Em it te r Voltage , VCE [V]

Fig 1. Typical Output Characteristics

Common Emitter VGE=15V

[V]

IC=10A

Collector-Emitter Voltage, V

-50 0 50 100 150

Case Temperature, TC [oC]

80A

60A

30A

10V

=6V

200

Common Em itter V

=15V

Tc= 25

160

[A]

120

Collector Current, I

Tc=125

012345

Colle c to r -E mitter Voltag e , VCE [V]

Fig 2. Typical Saturation Voltage Characteristics

[V]

Collector-Emitter Voltage, V

4 8 12 16 20

30A 60A

80A

IC=10A

Gate-Emitter Voltage, VGE [V]

Common Emitter TC= - 40 OC

Temperature at Varient Current Level

[V]

30A

60A 80A

Collector-Emitter Voltage, V

4 8 12 16 20

IC = 10A

Gate-Emitter Voltage, VGE [V]

Fig 5. Saturation Voltage vs. V

Fig 4. Saturation Voltage vs. VGE Fig 3. Saturation Voltage vs. Case

Common Emitter T

= 25oC

Fig 6. Saturation Voltage vs. VGE

[V]

30A 60A 80A

Collector-Emitter Voltage, V

4 8 12 16 20

IC = 10A

Gate-Em itter V oltag e, VGE [V]

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT

Common Emitter

= 125oC

CO-PAK Rev. A1

Page 4

10000

1000

Capacitance [pF]

100

Common Emitter VGE = 0V, f = 1MHz

TC = 25 oC

0 5 10 15 20 25 30

Collector-Emitter Voltage, VCE [V]

Cies

Coes

Cres

10000

VCC=600V, IC=60A VGE= +/-15V

TC=25 oC

1000

100

Switching Time [ns]

0 50 100 150 200

Gate Resistance, RG [Ω ]

Tdoff

Tdon

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK

Fig 7. Capacitance Characteristics

1000

VCC=600V, Rg=51 Ω VGE=+/-15V, TC=25 oC

Tdoff

Tf Tr

Switching Time [ns]

100

Tdon

10 20 30 40 50 60

Co llec to r Curre n t, IC [A]

Fig 9. Switching Characteristics vs. Collector Current

Ic MAX (Pulsed)

100

Ic MAX (Continuous)

100µs

Single Nonrepetitive

Collector Current, Ic [A]

0.1 Pulse Tc = 25oC

Curves must be derated linearly with increase in temperature

0.01

0.1 1 10 100 1000

DC Operation

Colle ctor - E mitter Voltage, VCE [V]

1ms

50µs

Fig 8. Switching Characteristics vs. Gate Resistance

Common Emit te r VCC=600V, RL=10 Ω

TC=25 oC

[V]

Gate-Emitter Voltage,V

0 50 100 150 200 250 300

Gate Charge, Qg [nC]

Fig 10. Gate Charge Characteristics

0.5

0.2

0.1

0.05

0.02

0.01

Thermal Response [Zthjc]

1E-3

1E-5 1E-4 1E-3 0.01 0.1 1 10

single pul se

0.01

Rectangular Pulse Duration [sec]

Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT

CO-PAK Rev. A1

Page 5

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK

100

TC = 100 oC

[A]

TC = 25oC

Forward Current, I

0.1

0.0 0.5 1.0 1.5 2.0 2.5

Forward Voltage, VFM [V]

Fig 13. Forward Characteristics

1.2

[us]

1.0

0.8

di/dt=-20A/us TC=25 oC

1.2

1.0

[us]

0.8

0.6

0.4

0.2

Reverse Recovery Time, t

0.0 0 40 80 120 160 200 240

IF= 60 A TC= 25 oC

120

Reverse Recovery Current I

100

[A]

di/dt [A/us]

Fig 14. Reverse Recovery Characteristics vs. di/dt

Reverse Recovery Current I

1000

[uA]

100

TC = 150 oC

0.6

Reverse Recovery Time, t

0.4

10 20 30 40 50 60

Forward Current, IF [A]

Fig 15. Reverse Recovery Characteristics vs. Forward Current

250

200

[pF]

150

100

Capacitance, C

0.1 1 10 100

Reverse Voltage, VR [V]

TC = 25 oC

[A]

0.1

Reverse Current, I

0.01

1E-3

0 300 600 900

TC= 25 oC

Reverse Voltage, VR [V]

Fig 16. Reverse Current vs. Reverse Voltage

Fig 17. Junction capacit a nce

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT

CO-PAK Rev. A1

Page 6

FGA50N100BNTD 1000V, 50A NPT-Trench IGBT CO-PAK

Dimensions in Millimeters

CO-PAK Rev. A1

Page 7

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Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

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Rev. I37