Page 1
tm
FGA50N100BNT
1000V, 50A NPT-Trench IGBT CO-PAK
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
March 2009
Features
• High Speed Switching
• Low Saturation Voltage : V
• High Input Impedance
•RoHS Compliant
= 2.5 V @ IC = 60A
CE(sat)
Applications
• UPS, PFC, I-H Jar, Induction Heater, Home Appliance.
G
C
E
TO-3P
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction and
switching characteristics as well as enhanced avalanche
ruggedness. These devices are well suited for UPS, PFC, I-H
Jar, induction Heater and Home Appliance.
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Collector to Emitter Voltage 1000 V
Gate to Emitter Voltage ± 25 V
Collector Current @ TC = 25oC50 A
Collector Current @ T
Pulsed Collector Current 200 A
Maximum Power Dissipation @ TC = 25oC156 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC35 A
C
= 100oC63 W
C
300
o
C
o
C
o
C
Notes:
1: Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.8
θJC
R
θJA
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA50N100BNT Rev. A
Thermal Resistance, Junction to Ambient - 40.0
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGA50N100BNT FGA50N100BNTTU TO-3PN Rail / Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 - - V
Collector Cut-Off Current VCE = 1000V, VGE = 0V - - 1.0 mA
G-E Leakage Current VGE = ±25V, VCE = 0V - - ±500 nA
G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.5 7.0 V
= 10A, VGE = 15V -1.51.8V
I
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 260 - pF
Reverse Transfer Capacitance - 200 - pF
C
= 60A, VGE = 15V 2.5 2.9 V
I
C
= 60A, VGE = 15V,
I
C
T
= 125oC
C
-3.1- V
- 6000 - pF
V
= 10V, VGE = 0V,
CE
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
ge
gc
Turn-On Delay Time
Rise Time - 68 - ns
Turn-Off Delay Time - 243 - ns
Fall Time - 65 100 ns
Total Gate Charge
Gate to Emitter Charge - 45 - nC
Gate to Collector Charge - 95 - nC
V
= 600V, IC = 60A,
CC
R
= 10Ω, V
G
Inductive Load, T
V
= 600V, IC = 60A,
CE
V
= 15V, TC = 25oC
GE
GE
= 15V,
= 25oC
C
-34-ns
- 257 350 nC
FGA50N100BNT Rev. A
2 www.fairchildsemi.com
Page 3
Typical Performance Characteristics
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
200
TC = 25oC
160
[A]
C
120
80
Collector Current, I
40
0
0246810
20V
15V
Collector-Emitter Voltage, VCE [V]
200
TC = 125oC
10V
9V
[A]
C
160
20V
15V
10V
9V
120
8V
7V
VGE = 6V
8V
7V
VGE = 6V
80
Collector Current, I
40
0
0246810
Collecto r-Emitter Voltag e, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
200
160
[A]
C
120
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
[A]
C
200
160
120
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
80
Collector Current, I
40
0
01234567
Collector-Emitter Voltage, VCE [V]
80
Collector Current, I
40
0
24681012
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
4.5
Common Emitter
VGE = 15V
[V]
CE
90A
60A
3.0
30A
IC = 10A
1.5
Collector-Emitter Voltage, V
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
20
[V]
CE
16
12
8
4
30A
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
IC = 10A
Gate-Emitter V o ltag e, VGE [V]
Common Emitter
TC = -40oC
60A
90A
GE
FGA50N100BNT Rev. A
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
Figure 7. Saturation Voltage vs. V
20
[V]
CE
16
Common Emitter
TC = 25oC
12
60A
8
4
30A
90A
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
IC = 10A
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics
8000
6000
4000
C
ies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Figure 8. Saturation Voltage vs. V
GE
20
16
[V]
CE
12
60A
8
4
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
30A
IC = 10A
Gate-Emitter Voltage, VGE [V]
15
Common Emitter
TC = 25oC
12
[V]
GE
VCC = 200V
9
6
600V
GE
Common Emitter
TC = 125oC
90A
400V
Capacitance [pF]
2000
C
C
res
oes
0
110
30
Collector-Emitter Voltage, VCE [V]
3
Gate-Emitter Voltage, V
0
0 55 110 165 220 275
Gate C h a rge, Qg [nC]
Figure 11. SOA Characteristics Figure 12. Load Current vs. Frequency
500
100
[A]
c
10
1
*Notes:
Collector Current, I
0.1
1. T
C
2. T
J
3. Single Pulse
0.01
1101001000
FGA50N100BNT Rev. A
= 25oC
= 150oC
Collector-Emitter Voltage, VCE [V]
10µs
100µs
1ms
10 ms
DC
3000
120
100
VCC = 600V
load Current : peak of square wave
80
60
Load Current [A]
40
Duty cycle : 50%
20
0
10
o
TC = 100
C
Power Dissipation = 63W
0
1
10
10
2
Frequency [kHz]
4 www.fairchildsemi.com
3
10
Page 5
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
300
2000
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
100
Switching Time [ns]
10
t
r
t
d(on)
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
10 20 30 40 50
Gate Resistance, RG [Ω]
1000
100
Switching Time [ns]
10
10 20 30 40 50
t
d(off)
t
f
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current
200
100
Switching Time [ns]
10
10 20 30 40 50 60 70 80 90 100
t
r
t
d(on)
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
Collector Cu rre n t, IC [A]
1000
Common Emitter
VGE = 15V, RG = 10Ω
100
TC = 25oC
TC = 125oC
Switching Time [ns]
10
10 20 30 40 50 60 70 80 90 100
Collector Cu rre n t, IC [A]
t
d(off)
t
f
Figure 17. Switching Loss vs. Gate Resistance Fig 18. Switching Loss vs. Collector Current
50
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
10
Switching Loss [mJ]
1
10 20 30 40 50
FGA50N100BNT Rev. A
E
on
E
off
Gate Resistance, RG [Ω]
5 www.fairchildsemi.com
30
10
E
on
E
1
Switching Loss [mJ]
0.1
10 20 30 40 50 60 70 80 90 10 0
off
Common Emitter
VCC = 600V, VGE = 15V
IC = 60A
TC = 25oC
TC = 125oC
Collector Cu rre n t, IC [A]
Page 6
Typical Performance Characteristics
Figure 19. Turn off Switching SOA Characterisics
250
100
[A]
C
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
10
Collector Curre nt, I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
3000
Figure 20.Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zthjc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
Duty Fa c to r , D = t1 /t2
Peak Tj = Pdm x Zthjc + T
C
FGA50N100BNT Rev. A
6 www.fairchildsemi.com
Page 7
Mechanical Dimensions
FGA50N100BNT 1000V, 50A NPT-Trench IGBT CO-PAK
TO-3PN
FGA50N100BNT Rev. A
7 www.fairchildsemi.com
Page 8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK
®
EfficentMax™
EZSWITCH™*
™*
®
®
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
®
FACT
®
FAST
®
F-PFS™
FRFET
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
®
FastvCore™
FETBench™
FlashWriter
FPS™
®
*
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
™
®
®
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
®
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
*
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
DISCLAIMER
FAIRCHILD SEMI CONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IM PROVE
RELIABILITY, FUNCTION, OR DESI GN. FAI RCHILD DO ES NOT ASSUME ANY LI ABILI TY ARISI NG OUT OF THE APPLI CATION OR USE O F ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEI THER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRI TICAL COM PONENTS IN L IFE SUPPORT DEVI CES OR SYSTEM S WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any w arranty issues that may arise. Fairchild w ill not pro vide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
Loading...