Page 1
tm
FGA30N60LSD
FGA30N60LSD
October 2008
Features
• Low saturation voltage: V
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverters
• UPS, Welder
=1.1V @ IC = 30A
CE(sat)
General Description
The FGA30N60LSD is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors.This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
C
C
G
G
E
E
Absolute Maximum Ratings
Symbol Description FGA30N60LSD Units
V
CES
V
GES
I
C
I
CM (1)
I
FSM
P
D
Operating Junction Temperature -55 to +150 °C
T
J
T
stg
T
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Collector-Emitter Voltage 600 V
Gate-Emitter Voltage ± 20 V
Collector Current @ TC = 25°C60 A
Collector Current @ T
Pulsed Collector Current 90 A
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Maximum Power Dissipation @ TC = 25°C 480 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150 °C
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100°C30 A
C
150 A
= 100°C 192 W
C
300 °C
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction-to-Case -- 0.26 °C/W
θJC
(Diode) Thermal Resistance, Junction-to-Case -- 0.92 °C/W
R
θJC
R
θJA
©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA30N60LSD Rev. A
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Page 2
Package Marking and Ordering Information
FGA30N60LSD
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGA30N60LSD FGA30N60LSDTU TO-3PN Tube 30ea -
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
∆B
VCES
∆T
J
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
/
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
VGE = 0V, IC = 250uA
, VGE = 0V -- -- 250 uA
CES
, VCE = 0V -- -- ±250 nA
GES
-- 0.6 -- V/°C
G-E Threshold Voltage IC = 250uA, VCE = VGE 4.0 5.5 7.0 V
I
= 30A, VGE = 15V -- 1.1 1.4 V
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance -- 245 -- pF
Reverse Transfer Capacitance -- 90 -- pF
C
= 30A, VGE = 15V,
I
C
T
= 125°C
C
I
= 60 A, VGE = 15V -- 1.3 -- V
C
-- 1.0 -- V
-- 3550 -- pF
V
= 30V, VGE = 0V,
CE
f = 1MHz
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
E
t
d(on)
t
r
t
d(off)
t
f
E
E
Q
Q
Q
L
e
on
off
on
off
g
ge
gc
Turn-On Delay Time
Rise Time -- 46 -- ns
Turn-Off Delay Time -- 250 -- ns
Fall Time -- 1.3 2.0 us
Turn-On Switching Loss -- 1.1 -- mJ
Turn-Off Switching Loss -- 21 -- mJ
Turn-On Delay Time
Rise Time -- 45 -- ns
Turn-Off Delay Time -- 270 -- ns
Fall Time -- 2.6 -- us
Turn-On Switching Loss -- 1.1 -- mJ
Turn-Off Switching Loss -- 36 -- mJ
Total Gate Charge
Gate-Emitter Charge -- 30 -- nC
Gate-Collector Charge -- 105 -- nC
Internal Emitter Inductance Measured 5mm from PKG -- 7 -- nH
= 400 V, IC = 30A,
V
CC
R
= 6.8Ω, V
G
GE
Inductive Load, T
= 400 V, IC = 30A,
V
CC
R
=6.8Ω, V
G
Inductive Load, T
V
CE
V
GE
GE
= 300 V, IC = 30A,
= 15V
= 15V,
= 25°C
C
= 15V,
= 125°C
C
-- 18 -- ns
-- 17 -- ns
-- 225 -- nC
FGA30N60LSD Rev. A
2 www.fairchildsemi.com
Page 3
FGA30N60LSD
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Parameter Conditions Min. Typ. Max Units
V
FM
I
RM
t
rr
t
a
t
b
Q
rr
IF = 15A
I
= 15A
F
= 25 °C
T
C
T
= 125 °C
C
-
-
1.8
1.6
2.2
VR = 600V TC = 25 °C - - 100 µA
IF =1A, di/dt = 100A/µs, V
I
=15A, di/dt = 100A/µs, V
F
IF =15A, di/dt = 100A/µs, V
= 30V
CC
= 390V
CC
= 390V TC = 25 °C
CC
= 25 °C
T
C
T
= 25 °C
C
T
= 25 °C
C
T
= 25 °C
C
-
-
-
-
-
-
-
18
13
27.5
35
40
-
-
-
V
V
ns
ns
ns
ns
nC
FGA30N60LSD Rev. A
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics
Figure 1.Typical Output Characteristics Figure 2. Typic al Satura tion Vo ltage
Characteristics
90
TC = 25oC
[A]
C
60
90
VGE = 20V
15V
12V
10V
8V
[A]
C
60
TC = 125oC
VGE = 20V
15V
12V
10V
8V
FGA30N60LSD
30
Collector Current, I
0
01234
Collector-Emitter Voltage, VCE [V]
30
Collector Current, I
0
01234
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer characteristics
Ch ara cte ritic s
90
[A]
C
60
30
Collector Current, I
0
0123
Collector-Em itte r Vo lta g e , VCE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. Vge
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
90
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
[A]
C
60
30
Collector Current, I
0
024681012
Gate-Emitter Voltage,VGE [V]
Temperature at Variant Current Level
1.4
[V]
CE
1.2
Common Emitter
VGE = 15V
60A
20
[V]
16
CE
Common Emitter
TC = 25oC
1.0
0.8
Collector-Emitter Voltage, V
0.6
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
FGA30N60LSD Rev. A
30A
IC = 15A
12
8
4
Collector-Emitter Voltage, V
0
30A
IC = 15A
60A
0 4 8 121620
Gate-Emitter Voltage, VGE [V]
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics (Continued)
FGA30N60LSD
Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance characteristics
20
16
[V]
CE
12
8
30A
60A
Common Emitter
TC = 125oC
13000
10000
C
ies
C
oes
1000
C
res
Capacitance [pF]
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
4
Collector-Emitter Voltage, V
IC = 15A
0
0 4 8 12 16 20
Gate-Emitte r Voltage, VGE [V]
Figure 9. Gate Charge Characteristics Figure 10. SOA Characteeristics
15
Common Emitter
IC = 30A
TC = 25oC
12
[V]
GE
9
Vcc = 100V
300V
200V
100
50
0 5 10 15 20 25 30
Collector-Emitter Voltage, VCE [V]
300
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
[A]
c
10
100µs
6
Single Nonrepetitive
3
Gate-Emitter Voltage, V
0
0 50 100 150 200 250
Gate Ch a r g e , Qg [nC]
1
Pulse TC = 25oC
Collector Current, I
Curves must be derated
linearly with increase
in temperature
0.1
0.1 1 10 100 1000
Collector-Emitter Voltage, VCE [V]
DC Operation
Figure 11. Load Current Vs. Frequency Figure 12. Turn-On Characteristics vs.
Gate Resistance
80
70
Vcc = 400V
load Current : peak of square wave
60
200
100
50µs
1ms
50
40
30
Load Current [A]
20
Duty cycle : 50%
10
Tc = 100
Powe Dissipation = 192W
0
0.1 1 10 100 1000
FGA30N60LSD Rev. A
o
C
Frequency [kHz]
t
r
td(on)
Switching Time [ns]
10
0 1020304050
Gate Resistance, RG [Ω]
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
5 www.fairchildsemi.com
Page 6
Typical Performance Characteristics (Continued)
Figure 13. Turn-Off Characteristics vs. Figure 14. Turn-On Characteristics vs.
Gate Resistance Collector Current
3000
1000
t
f
500
Common Emitter
VGE = 15V, RG = 6.8Ω
TC = 25oC
TC = 125oC
100
t
r
FGA30N60LSD
t
d(off)
Switching Time [ns]
100
0 1020304050
Gate Resistance, RG [Ω]
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
Switching Time [ns]
10
20 30 40 50 60 70 80
Collector Current, IC [A]
Figure 15. Turn-Off Characteristics vs. Figure 16. Switching Loss vs
Collector Current Gate Resistance
1000
Switching Time [ns]
6000
t
f
Common Emitter
VGE = 15V, RG = 6.8Ω
t
d(off)
100
20 30 40 50 60 70 80
TC = 25oC
TC = 125oC
Collecto r C urrent, IC [A]
500
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
100
TC = 125oC
10
Switching Loss [mJ]
1
5 101520253035404550
Gate Resistance, RG [Ω]
E
Figure 17.Switching Loss vs Collector Current Figure 18. Turn-Off Switching
SOA Characteristics
100
200
t
d(on)
E
off
on
10
1
Switching Loss [mJ]
0.1
10 20 30 40 50 60 70 80
FGA30N60LSD Rev. A
Common Emitter
VGE = 15V, RG = 6.8Ω
TC = 25oC
TC = 125oC
Collector Current, IC [A]
E
off
E
on
100
[A]
C
10
Collector Cu rre n t , I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
6 www.fairchildsemi.com
Page 7
Figure 19. Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.01
Thermal Response [Zthjc]
0.02
0.01
single pulse
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + T
2
C
Figure 20. Typical Forward Voltage Drop Figure 21. Typical Reverse Current
FGA30N60LSD
100
[A]
F
10
TC=125oC
1
TC=75oC
FPRWARD CURRENT, I
TC=25oC
0.1
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
FORWARD VOLTAGE, VF [V]
Figure 22. Typical Reverse Recovery Time
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
REVERSE RECOVERY TIME, trr [ns]
10
0
100 200 300 400 500
TC = 25oC
TC = 125oC
TC = 75oC
di/dt [A/µs]
IF = 15A
1E-4
1E-5
[A]
R
1E-6
1E-7
REVERSE CURRENT, I
1E-8
1E-9
0 100 200 300 400 500 600
TC = 125oC
TC = 75oC
TC = 25oC
REVERSE VOLTAGE, VR [V]
FGA30N60LSD Rev. A
7 www.fairchildsemi.com
Page 8
FGA30N60LSD
FGA30N60LSD Rev. A
8 www.fairchildsemi.com
Page 9
TRADEMARKS
tm
®
tm
tm
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is
not intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
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Current Transfer Logic™
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EZSWITCH™ *
™
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FACT Quiet Series™
FACT
FAST
FastvCore™
FlashWriter
®
®
®
®
®
*
®
* EZSWITCH™ and FlashWriter
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC
OPTOPLANAR
®
®
®
SM
PDP SPM™
Power-SPM™
PowerTrench
Programmable Active Droop™
QFET
QS™
Quiet Series™
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Saving our world, 1mW at a time™
SmartMax™
SMART START™
SPM
STEALTH™
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SuperMOS™
®
®
®
SyncFET™
The Power Franchise
TinyBoost™
TinyBuck™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
®
®
are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
®
®
®
FGA30N60LSD
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semiconduct or products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experi ence man y proble ms such as loss of brand repu tat ion , subst and ard p erforman ce, fail ed
application, and increased cost of production and manu facturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Farichild strongly encourages customers to purcha se Farichild parts either d irectly from Fairchild or from Author ized Fairchild
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.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I35
9 www.fairchildsemi.com
FGA30N60LSD Rev. A
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