Page 1
tm
FGA30N120FTD
1200V, 30A Trench IGBT
FGA30N120FTD 1200V, 30A Trench IGBT
May 2009
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
CE(sat)
= 1.6V @ IC = 30A
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applications.
Applications
• Induction heating and Microwave oven
• Soft switching applications
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Collector to Emitter Voltage 1200 V
Gate to Emitter Voltage ± 25 V
Collector Current @ TC = 25oC60 A
Collector Current @ T
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation @ TC = 25oC339 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC30 A
C
@ T
= 25oC
C
@ T
= 100oC
C
= 100oC132 W
C
90 A
30 A
300
o
C
o
C
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.38
θJC
(Diode) Thermal Resistance, Junction to Case - 1.2
R
θJC
R
θJA
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH30N120FTD Rev. A
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
Page 2
Package Marking and Ordering Information
Packaging
Device Marking Device Package Eco Status
FGA30N120FTD FGA30N120FTDTU TO-3PN RoHS Tube 30ea
For Fairchild’s definition of “green” Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Type Qty per Tube
FGA30N120FTD 1200V, 30A Trench IGBT
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 1.70 - mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 2.37 - mJ
E
ts
Q
g
Q
ge
Q
gc
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 1200 - - V
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
, VGE = 0V - - 1 mA
CES
, VCE = 0V - - ±250 nA
GES
G-E Threshold Voltage IC = 30mA, VCE = VGE 3.5 6 7.5 V
= 30A, VGE = 15V -1.62 V
I
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 150 - pF
Reverse Transfer Capacitance - 95 - pF
Turn-On Delay Time
C
= 30A, VGE = 15V,
I
C
T
= 125oC
C
V
= 30V, VGE = 0V,
CE
f = 1MHz
-2.0- V
- 5140 - pF
-31-ns
Rise Time - 101 - ns
Turn-Off Delay Time - 198 - ns
Fall Time - 259 - ns
Turn-On Switching Loss - 0.54 - mJ
= 600V, IC = 30A,
V
CC
R
= 10Ω, V
G
Resistive Load, T
GE
= 15V,
= 25oC
C
Turn-Off Switching Loss - 1.16 1.51 mJ
Turn-On Delay Time
-40-ns
Rise Time - 127 - ns
Turn-Off Delay Time - 211 - ns
Fall Time - 364 - ns
Turn-On Switching Loss - 0.74 - mJ
V
= 600V, IC = 30A,
CC
R
= 10Ω, V
G
Resistive Load, T
GE
= 15V,
= 125oC
C
Turn-Off Switching Loss - 1.63 - mJ
Total Gate Charge
V
= 600V, IC = 30A,
Gate to Emitter Charge - 41 - nC
Gate to Collector Charge - 97 - nC
CE
V
= 15V
GE
- 208 - nC
FGH30N120FTD
Rev. A
2 www.fairchildsemi.com
Page 3
FGA30N120FTD 1200V, 30A Trench IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25oC- 1.3 1.7
V
FM
t
rr
I
rr
Q
rr
Diode Forward Voltage IF = 30A
Diode Reverse Recovery Time
=30A,
I
F
Diode Peak Reverse Recovery Current
di/dt = 200A/µs
Diode Reverse Recovery Charge
C
= 125oC- 1.3 -
T
C
T
= 25oC - 730 -
C
= 125oC - 775 -
T
C
T
= 25oC- 43 -
C
= 125oC- 47 -
T
C
T
= 25oC- 5.9 -
C
= 125oC - 18.2 -
T
C
µC
V
ns
A
FGA30N120FTD Rev. A
3 www.fairchildsemi.com
Page 4
FGA30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
[A]
C
180
150
120
TC = 25oC
17V
20V
15V
12V
[A]
C
180
150
120
TC = 125oC
17V
20V
15V
90
60
Collector Current, I
30
0
02468
10V
9V
VGE = 8V
Collector-Emitter Voltage, VCE [V]
90
60
Collector Current, I
30
0
02468
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
120
Common Emitter
VGE = 15V
100
TC = 25oC
[A]
TC = 125oC
C
80
60
40
Collector Current, I
20
0
0246
Collector-Emitter Voltage, VCE [V]
120
Common Emitter
VCE = 20V
100
TC = 25oC
[A]
TC = 125oC
C
80
60
40
Collector Current, I
20
0
051015
Gate-Emitter Voltage,VGE [V]
12V
10V
9V
VGE = 8V
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
3.0
Common Emitter
VGE = 15V
[V]
CE
2.5
2.0
1.5
Collector-Emitter Vo ltage, V
1.0
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
FGH30N120FTD
Rev. A
60A
30A
IC = 10A
20
[V]
CE
16
12
8
4
Collector-Emitter Voltage, V
0
048121620
30A
IC = 15A
Gate-Emitter Voltage, VGE [V]
4 www.fairchildsemi.com
GE
Common Emitter
TC = 25oC
60A
Page 5
Typical Performance Characteristics
FGA30N120FTD 1200V, 30A Trench IGBT
Figure 7. Saturation Voltage vs. V
20
16
[V]
CE
Common Emitter
TC = 125oC
Figure 8. Capacitance Characteristics
GE
8000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
6000
C
ies
12
4000
8
Capacitance [pF]
4
Collector-Emitter Voltage, V
0
048121620
30A
IC = 15A
60A
2000
0
110
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
15
Common Emitter
TC = 25oC
12
[V]
GE
VCC = 200V
400V
600V
[A]
c
200
100
10
9
1
C
oes
C
res
Collector-Emitter Voltage, VCE [V]
100µs
1ms
10 ms
DC
30
10µs
6
*Notes:
0.1
3
Gate-Emitter Voltage, V
0
0 50 100 150 200 250
Gate Ch a r g e , Qg [nC]
Collector Current, I
1. T
= 25oC
C
= 150oC
2. T
J
3. Single Pulse
0.01
1 10 100 1000 3000
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Gate Resistance
Switching Time [ns]
Gate Resistance
500
100
t
r
Common Emitter
t
d(on)
10
0 20406080100
Gate Resistance, RG [Ω]
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
2000
1000
Comm o n Emitter
Switching Time [ns]
100
50
0 20406080100
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
t
d(off)
t
f
Gate Resistance, RG [Ω]
FGH30N120FTD
Rev. A
5 www.fairchildsemi.com
Page 6
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
1000
100
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
t
r
1200
1000
Commo n Em itte r
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
t
f
FGA30N120FTD 1200V, 30A Trench IGBT
Switching Time [ns]
10
10 20 30 40 50
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Res istance Figure 16. Switching Loss vs. Collector Current
10
E
off
1
Common Emitt e r
E
Switching Loss [mJ]
on
0.1
0 20406080100
VCC = 600V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
Gate Resistance, RG [Ω]
t
d(on)
Switching Time [ns]
100
10 20 30 40 50
t
d(off)
Collector Cu rre n t, IC [A]
10
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
1
E
off
E
on
Switching Loss [mJ]
0.1
10 20 30 40 50
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100
100
[A]
C
10
Collector Current, I
FGH30N120FTD
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
Rev. A
2000
[A]
10
F
TJ = 125oC
TJ = 25oC
1
Forward Current, I
0.1
0.0 0.5 1.0 1.5
TC = 25oC
TC = 125oC
Forward Voltage, VF [V]
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
Figure 19. Reverse Current Figure 20. Stored Charge
50
20
FGA30N120FTD 1200V, 30A Trench IGBT
[A]
rr
40
30
Reverse Recovery Currnet, I
20
10 20 30 40
Forward Current, IF [A]
200A/µs
di/dt = 100 A/µs
Figure 21. Reverse Recovery Time
1000
[ns]
rr
800
600
di/dt = 100A/µs
200A/µs
18
[µC]
rr
16
14
200A/µs
12
di/dt = 100A/µs
10
8
Stored Recover y Charge, Q
6
10 20 30 40
Forward Cu rre n t, IF [A]
Reverse Recovery Time, t
400
10 20 30 40
Forward Current, IF [A]
Figure 22. Transient Thermal Impedance of IGBT
P
DM
t
1
t
2
FGA30N120FTD Rev. A
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
TO-3PN
FGA30N120FTD 1200V, 30A Trench IGBT
FGH30N120FTD
Rev. A
8 www.fairchildsemi.com
Page 9
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FGA30N120FTD 1200V, 30A Trench IGBT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sust ain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website,
www.fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencin g counterfeiting of their
parts. Customers who inadvertently purchase coun te rfei t parts e xp erience many prob lems such as loss of b rand reput ati on, subst andard performance, failed
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proliferation of counterfeit parts. Farichild st rongly encourages customer s to purcha se Farichild p arts eit her directly from Fa irchild or from Author ized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
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Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
FGA30N120FTD Rev. A
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
www.fairchildsemi.com9
Rev. I36
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