Page 1
tm
FGA25N120FTD
1200V, 25A Trench IGBT
Features
• Field stop trench technology
• High speed switching
• Low saturation voltage: V
• High input impedance
•RoHS complaint
Applications
• Induction heating and Microvewave oven
• Soft switching applications
=1.6V @ IC = 25A
CE(sat)
FGA25N120FTD 1200V, 25A Trench IGBT
February 2009
General Description
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
ruggedness. This device is designed for soft switching applications.
C
G
G
TO-3P
C
E
E
Absolute Maximum Ratings
Symbol Description Ratings Units
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
Operating Junction Temperature -55 to +150
T
J
T
stg
T
L
Notes:
1: Repetitiverating: Pulse width limited by max. junction temperature
Collector to Emitter Voltage 1200 V
Gate to Emitter Voltage ± 25 V
Collector Current @ TC = 25oC50 A
Collector Current @ T
Pulsed Collector Current
Diode continuous Forward current
Maximum Power Dissipation @ TC = 25oC313 W
Maximum Power Dissipation @ T
Storage Temperature Range -55 to +150
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
= 100oC25 A
C
@ T
= 100oC
C
= 100oC125 W
C
75 A
25 A
300
Thermal Characteristics
o
C
o
C
o
C
Symbol Parameter Typ. Max. Units
R
(IGBT) Thermal Resistance, Junction to Case - 0.4
θJC
(Diode) Thermal Resistance, Junction to Case - 1.42
R
θJC
R
θJA
©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA25N120FTD Rev. A1
Thermal Resistance, Junction to Ambient - 40
o
C/W
o
C/W
o
C/W
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Package Marking and Ordering Information
FGA25N120FTD 1200V, 25A Trench IGBT
Max Qty
per Box
Device Marking Device Package
Packaging
Type Qty per Tube
FGA25N120FTD FGA25N120FTDTU TO-3PN - - 30
Electrical Characteristics of the IGBT T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
CES
I
CES
I
GES
On Characteristics
V
GE(th)
V
CE(sat)
Dynamic Characteristics
C
ies
C
oes
C
res
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1200 - - V
Collector Cut-Off Current VCE = V
G-E Leakage Current VGE = V
, VGE = 0V - - 1 mA
CES
, VCE = 0V - - ±250 nA
GES
G-E Threshold Voltage IC = 25mA, VCE = VGE 3.5 6 7.5 V
= 25A, VGE = 15V -1.62 V
I
Collector to Emitter Saturation Voltage
Input Capacitance
Output Capacitance - 130 - pF
C
= 25A, VGE = 15V,
I
C
T
= 125oC
C
V
= 30V, VGE = 0V,
CE
f = 1MHz
-1.88- V
- 3830 - pF
Reverse Transfer Capacitance - 86 - pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 1.24 - mJ
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
Total Switching Loss - 1.77 - mJ
E
ts
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time - 96 - ns
Turn-Off Delay Time - 210 - ns
Fall Time - 215 - ns
Turn-On Switching Loss - 0.34 - mJ
= 600V, IC = 25A,
V
CC
R
= 10Ω, V
G
Resistive Load, T
GE
= 15V,
= 25oC
C
Turn-Off Switching Loss - 0.90 1.20 mJ
Turn-On Delay Time
Rise Time - 113 - ns
Turn-Off Delay Time - 232 - ns
Fall Time - 390 - ns
Turn-On Switching Loss - 0.38 - mJ
= 600V, IC = 25A,
V
CC
R
= 10Ω, V
G
GE
Resistive Load, T
= 15V,
= 125oC
C
Turn-Off Switching Loss - 1.39 - mJ
Total Gate Charge
V
= 600V, IC = 25A,
Gate to Emitter Charge - 30 - nC
Gate to Collector Charge - 78 - nC
CE
V
= 15V
GE
-48-ns
-44-ns
- 160 - nC
FGA25N120FTD Rev. A1
2 www.fairchildsemi.com
Page 3
FGA25N120FTD 1200V, 25A Trench IGBT
Electrical Characteristics of the Diode T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max Units
T
= 25oC- 1.4 1.8
V
FM
t
rr
I
rr
Q
rr
Diode Forward Voltage IF = 25A
Diode Reverse Recovery Time
I
=25A, dIES/dt = 200A/µs
Diode Reverse Recovery Time
ES
Diode Reverse Recovery Charge
C
= 125oC - 1.42 -
T
C
T
= 25oC - 770 -
C
= 125oC - 895 -
T
C
T
= 25oC- 48 -
C
= 125oC- 50 -
T
C
T
= 25oC- 18 -
C
= 125oC- 23 -
T
C
µC
V
ns
A
FGA25N120FTD Rev. A1
3 www.fairchildsemi.com
Page 4
Typical Performance Characteristics
FGA25N120FTD 1200V, 25A Trench IGBT
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
180
TC = 25oC
150
[A]
C
120
90
60
Collector Current, I
30
0
0246810
20V
17V
Collector-Emitter Voltage, VCE [V]
15V
180
TC = 125oC
150
[A]
C
12V
10V
9V
7V
8V
VGE = 6V
120
90
60
Collector Current, I
30
0
0246810
Collector-Emitter Voltage, VCE [V]
17V
20V
15V
12V
10V
9V
VGE = 6V
7V
8V
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
[A]
C
120
90
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
120
90
[A]
C
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
60
30
Collector Current, I
0
012345
Collector-Emitter Voltage, VCE [V]
60
Collector Current, I
30
0
03691215
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
Temperature at Variant Current Level
3.0
Common Emitter
VGE = 15V
2.7
[V]
CE
50A
2.4
2.1
1.8
25A
1.5
IC = 10A
1.2
Collector-Emitter Voltage, V
0.9
25 50 75 100 125
Collector-EmitterCase Temperature, TC [oC]
20
[V]
CE
16
Common Emitter
TC = 25oC
12
8
4
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
25A
IC = 10A
50A
Gate-Emitter V o ltag e, VGE [V]
GE
FGA25N120FTD Rev. A1
4 www.fairchildsemi.com
Page 5
Typical Performance Characteristics
FGA25N120FTD 1200V, 25A Trench IGBT
Figure 7. Saturation Voltage vs. V
20
16
[V]
CE
Common Emitter
TC = 125oC
Figure 8. Capacitance Characteristics
GE
6000
Common Emitter
5000
C
ies
VGE = 0V, f = 1 M Hz
TC = 25oC
4000
12
8
4
Collector-Emitter Voltage, V
0
0 4 8 12 16 20
IC = 10A
25A
50A
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
15
Common Emitter
TC = 25oC
12
[V]
GE
9
VCC = 200V
600V
400V
3000
2000
Capacitance [pF]
1000
0
110
C
oes
C
res
Collector-Emitter Voltage, VCE [V]
200
[A]
c
100
10
1
10µs
100µs
1ms
10 ms
DC
30
6
*Notes:
0.1
1. T
3
Gate-Emitter Voltage, V
0
0 50 100 150 200
Gate Ch a r g e , Qg [nC]
Collector Current, I
0.01
= 25oC
C
= 150oC
2. T
J
3. Single Pulse
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
3000
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.
Switching Time [ns]
FGA25N120FTD Rev. A1
Gate Resistance
500
t
r
100
Common Emitter
t
d(on)
10
0 20406080100
Gate Resistance, RG [Ω]
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
Gate Resistance
5500
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
1000
Switching Time [ns]
100
50
0 20406080100
Gate Resistance, RG [Ω]
5 www.fairchildsemi.com
t
d(off)
t
f
Page 6
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
500
100
Switching Time [ns]
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
t
r
t
d(on)
1500
1000
Switching Time [ns]
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
t
d(off)
t
f
FGA25N120FTD 1200V, 25A Trench IGBT
10
10 20 30 40
5
45
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Res istance Figure 16. Switching Loss vs. Collector Current
10000
Common Emitter
VCC = 600V, VGE = 15V
IC = 25A
TC = 25oC
TC = 125oC
E
off
1000
Switching Loss [µJ]
200
0 20406080100
E
on
Gate Resistance, RG [Ω]
Figure 17. Turn off Switching SOA Characteristics Figure 18. Forward Characteristics
100
100
10 20 30 40
5
Collector Current, IC [A]
10000
Common Emitter
VGE = 15V, RG = 10Ω
TC = 25oC
TC = 125oC
E
off
1000
E
on
Switching Loss [µJ]
100
30
0 1020304050
Collector Current, IC [A]
30
45
10
[A]
C
10
[A]
F
TJ = 125oC
TJ = 25oC
1
Collector Cu rre n t , I
Safe Operating Area
VGE = 15V, TC = 125oC
1
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
FGA25N120FTD Rev. A1
2000
Forward Current, I
0.1
0.00.51.01.52.0
TC = 25oC
TC = 125oC
Forward Voltage, VF [V]
6 www.fairchildsemi.com
Page 7
Typical Performance Characteristics
FGA25N120FTD 1200V, 25A Trench IGBT
Figure 19. Reverse Recovery Current Figure 20. Stored Charge
60
[A]
rr
50
40
200A/µs
di/dt = 100 A/µs
30
[µC]
rr
20
10
200A/µs
di/dt = 100A/µs
30
Reverse Recovery Currnet, I
20
10 15 20 25 30
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
Stored Recovery Ch arge, Q
0
10 15 20 25 30
Forward Current, IF [A]
1200
[ns]
1000
rr
800
di/dt = 100 A/µs
200A/µs
600
Reverse Recovery Time, t
400
10 15 20 25 30
Forward Cu rre n t, IF [A]
Figure 22. Transient Thermal Impedance of IGBT
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
Thermal Response [Zth jc]
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1 10
Rectangular Pulse Duration [sec]
P
DM
t
1
t
Duty Factor, D = t1/t2
2
Peak Tj = Pdm x Zthjc + T
C
FGA25N120FTD Rev. A1
7 www.fairchildsemi.com
Page 8
Mechanical Dimensions
FGA25N120FTD 1200V, 25A Trench IGBT
TO-3PN
FGA25N120FTD Rev. A1
Dimensions in Millimeters
8 www.fairchildsemi.com
Page 9
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FGA25N120FTD 1200V, 25A Trench IGBT
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
in the labeling, can be reasonably expected to result in a
significant injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
Preliminary First Production
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed Full Production
Obsolete Not In Production
FGA25N120FTD Rev. A1
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
www.fairchildsemi.com9
Rev. I34
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