
FFPF06U40DN
Features
• Ultrafast with soft recovery
• Low forward voltage
Applications
• Power switching circuits
• Output rectifiers
• Freewheeling diodes
• Switc hing mod e po w er supply
1 2 3
ULTRA FAST RECOVERY POWER RECTIFIER
TO-220F
FFPF06U40DN
1. Anode 2.Cathode 3. An ode
Absolute Maximum Ratings
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetitiv e Reverse Volt age 400 V
Average Rectified Forward Current @ TC = 100°C6 A
Non-repetitive Peak Surge Current
60Hz Single Ha lf- Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
(per diode) TC=25°°°°C unless otherwise noted
60 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical C haract eri stics
Symbol Parameter Min. Typ. Max. Units
V
FM
*
I
RM
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maxi mum Therm al Resist ance, Junction to Case 7.0 °C/W
(per diode) TC=25 °°°°C unless otherwise noted
Maximum Instantaneous Forward Voltage
I
I
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time
Maximum Reverse Recovery Current
Maximum Reverse Recovery Charge
(I
=6A, di/dt = 200A/µs)
F
Avalanche Energy 1.0 - - mJ
= 6A
F
= 6A
F
@ rated V
= 25 °C
T
C
T
= 100 °C
C
TC = 25 °C
R
T
= 100 °C
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.4
1.3
20
200
50
4.0
100
V
µA
ns
A
nC
©2000 Fai r ch i ld Semiconductor Inter national
Rev. F, September 2000

Typical C h aracteristic sTypical C h aracteristic sTypical C h aracteristic sTypical C h aracteristic sTypical C h aracteristic sTypical C h aracteristic s
FFPF06U40DN
40
10
[A]
TC = 100oC
F
TC = 25oC
1
Forward Current , I
0.1
0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
300
250
200
150
100
Capacitance , Cj [pF]
50
0.1 1 10 100
Reverse Voltage , VR [V]
Typical Capacitance
at 0V = 285 pF
1000
TC = 100oC
100
A]
µ
[
R
10
1
0.1
Reverse Current , I
0.01
0.001
50 100 150 200 250 300 350 400
TC = 25oC
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Revers e Voltag e
55
IF = 6A
50
[ns]
rr
45
40
35
30
Reverse Recovery Time , t
25
100 500
di/dt [A/µs]
TC = 25oC
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
7
IF = 6A
6
[A]
rr
5
4
3
2
TC = 25oC
Reverse Recovery Current , I
1
100 500
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
10
[A]
F(AV)
5
DC
Averag e Forwa rd Cur rent , I
0
60 80 100 120 140 160
Case Temperature , TC [oC]
Figure 6. Forward Current Derati ng Curve
vs. di/dt
©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000

Package Di men sio n s
±0.10
3.30
±0.20
15.80
10.16
(7.00)
TO-220F
±0.20
ø3.18
±0.10
±0.20
6.68
(1.00x45°)
2.54
(0.70)
FFPF06U40DN
±0.20
±0.20
15.87
±0.30
9.75
MAX1.47
0.80
0.35
2.54TYP
[2.54
±0.20
±0.10
±0.10
(30°)
#1
0.50
+0.10
–0.05
2.76
±0.20
2.54TYP
]
9.40
±0.20
[2.54
±0.20
±0.20
]
4.70
©2000 Fairchild Semiconductor International
Dimensions in Millimeters
Rev. F, September 2000

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1