Datasheet FFP15S60STU Specification

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FFP15S60S

1. Cathode 2. Anode

1. Cathode 2. Anode

TO-220-2L

15 A, 600 V, STEALTH™ II Diode

FFP15S60S — STEALTH™ II Diode

May 2015

Features

• Stealth Recovery Trr = 35 ns (@ IF = 15 A)

• Max Forward Voltage, V

• 600 V Reverse Voltage and High Reliability

• Improved dv/dt Capability

• RoHS compliant

= 2.6 V (@ TC = 25oC)

F

Description

The FFP15S60S is a STEALTH™ II diode with soft recovery char­acteristics. It is silicon nitride passivated ion-implanted epitaxial
planar construction. This device is intended for use as freewheel­ing of boost diode in switching power supplies and other power
swithching applications. Their low stored charge and hyperfast
soft recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transistors.

Applications

• General Purpose

• SMPS, Power Switching Circuits

• Boost Diode in Continuous Mode Power Factor Corrections

Absolute Maximum Ratings T

Symbol Parameter FFP15S60S Unit

V

RRM

V

RWM

V

R

I

F(AV)

I

FSM

T

J

, T

STG

Peak Repetitive Reverse Voltage 600 V

Working Peak Reverse Voltage 600 V

DC Blocking Voltage 600 V

Average Rectified Forward Current @ TC = 123oC 15 A

Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave

Operating and Storage Temperature Range -65 to +175

= 25oC unless otherwise noted

C

150 A

o

C

Thermal Characteristics

Symbol Parameter FFP15S60S Unit

R

θJC

Maximum Thermal Resistance, Junction to Case 1.3

Package Marking and Ordering Information

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FFP15S60STU F15S60S TO-220-2L Tube N/A N/A 50

©2007 Fairchild Semiconductor Corporation
FFP15S60S Rev. 1.8

o

C/W

www.fairchildsemi.com1

FFP15S60S — STEALTH™ II Diode

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Min. Typ . Max. Unit

= 15 A

I

1

V

F

I

1

R

t

rr

t

rr

I

rr

S factor
Q

rr

t

rr

I

rr

S factor
Q

rr

W

AVL

Notes:

1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2%

F

= 15 A

I

F

V

= 600 V

R

= 600 V

V

R

IF = 1A, di/dt = 100 A/μs, VR = 30 V TC = 25oC - 21 30 ns

IF = 15 A, di/dt = 200 A/μs, VR = 390 V TC = 25oC

IF = 15 A, di/dt = 200 A/μs, VR = 390 V TC = 125oC

Avalanche Energy ( L = 40 mH) 20 - - mJ

T

C

T

C

T

C

T

C

= 25oC
= 125oC

= 25oC
= 125oC

-

-

-

-

-

-

-

-

-

-

-

-

2.1

1.6

23

2.5

0.7
29

55

4.3

1.1

118

2.6

-

-

-

100
500

35

-

-

-

-

-

-

-

Test Circuit and Waveforms

V

μA

ns

A

nC

ns

A

nC

Figure 1. Diode Reverse Recovery Test Circuit & Waveform

Figure 2. Unclamped Inductive Swit

ching Test Circuit & Waveform

©2007 Fairchild Semiconductor Corporation
FFP15S60S Rev. 1.8

www.fairchildsemi.com2

Typical Performance Characteristics

01234

0.1

1

10

TC = 75oC

TC = 125oC

Forward Current, I

F

[A]

Forward Voltage, VF [V]

TC = 25oC

70

100 200 300 400 500 600

0.01

0.1

1

10

100

TC = 125oC

TC = 25oC

TC =75oC

Reverse Current, I

R

[μA]

Reverse Voltage, VR [V]

10

0.1 1 10 100

30

60

90

120

150

180

Typical Capacitance
at 0V = 180 pF

Capacitances, Cj [pF]

Reverse Voltage, VR [V]

100 200 300 400 500 600

20

30

40

50

60

IF = 15A

TC = 25oC

TC = 75oC

TC = 125oC

Reverse Recovery Time, t

rr

[ns]

di/dt [A/μs]

25 50 75 100 125 150

0

10

20

30

40

50

Average Forward Current, I

F(AV)

[A]

Case temperature, TC [oC]

DC

100 200 300 400 500 600

1

2

3

4

5

6

7

TC = 125oC

TC = 25oC

TC = 75oC

Reverse Recovery Current, I

rr

[A]

di/dt [A/μs]

IF = 15A

Figure 3. Typical Forward Voltage Drop Figure 4. Typical Reverse Current
vs. Forward Current vs. Reverse Voltage

Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time
vs. di/dt

FFP15S60S — STEALTH™ II Diode

Figure 7. Typical Reverse Recovery Figure 8. Forward Current Derating Curve
Current vs. di/dt

©2007 Fairchild Semiconductor Corporation
FFP15S60S Rev. 1.8

3

www.fairchildsemi.com

4.09

3.50

M

A

10.67

9.65

0.36

3.43

2.54

B A

M

B

1.40

0.51

8.89

6.86

9.40

8.38

C

1.91

2.54

5.08

1 2

6.35 MAX

1.65

1.25

1.02

0.38

0.36

16.51

14.22

14.73

13.60

M

7°
3°

5°
3°

0.61

0.33

C

A B

6.86

5.84

2.92

2.03

13.40

16.15

15.75
5°
3°

12.19

0.60 MAX

5°
3°

5°
3°

4.80

4.30

NOTES:

A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K,
VARIATION AC,DATED APRIL 2002.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME

Y14.5-2009.

D. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

E. DRAWING FILE NAME: TO220A02REV5

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