
FFA60U60DN
Features
• High v ol tage and high r el ia bi lity
• High speed switching
• Low forward voltage
Applications
• General purpose
• Switc hing mod e po w er supply
• Free-wheeling diode for motor application
• Power switching circuits
1   2   3
ULTRA FAST RECOVERY POWER RECTIFIER
TO-3P
FFA60U60DN
  1. Anode  2.Cathode  3. Anod e
Absolute Maximum Ratings 
Symbol Parameter Value Units
V
RRM
I
F(AV)
I
FSM
T
J, TSTG
Peak Repetit iv e Reve rse Voltage 600 V 
Average Rectified Forward Current         @ TC = 100°C60 A 
Non-repetitive Peak Surge Current 
60Hz Single H a lf- Sine Wave
Operating Junction and Storage Temperature - 65 to +150 °C
 (per diode) TC=25°°°°C unless otherwise noted
360 A
Thermal Characteristics
Symbol Parameter Value Units
R
θJC
Electrical C haract eri stics 
Symbol Parameter Min. Typ. Max. Units
V
FM 
*
I
RM  
*
t
rr
I
rr
Q
rr
W
AVL
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Maxi mum Ther m al Resis t an ce, Juncti on to Ca se 0.45 °C/W
 (per diode) TC=25 °°°°C unless oth erw is e note d
Maximum Instantaneous Forward Voltage 
Maximum Instantaneous Reverse Current
Maximum Reverse Recovery Time 
Maximum Reverse Recovery Current 
Maximum Reverse Recovery Charge 
(I
 =60A, di/dt = 200A/µs)
F
Avalanche Energy 1.0 - - mJ
 = 60A
I
F
I
 = 60A
F
@ rated V
 = 25 °C
T
C
T
 = 100 °C
C
  TC = 25  °C
R
T
 = 100 °C
C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.2
2.0
25
250
90
9
405
V
µA
ns
A
nC
©2000 Fai r ch i ld Semiconductor Inter national
Rev. F, September 2000

Typical C h aracteristic sTypical C h aracteristic s
FFA60U60DN
100
TC = 100oC
 [A]
F
10
TC = 25oC
1
Forward Current , I
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage , VF [V]
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
1000
900 
800 
700 
600 
500 
400 
300
Capacitance , Cj [pF]
200 
100
0.1 1 10 100
Reverse Voltage , VR [V]
Typical Capacitance 
 at 0V = 850 pF
1000
100
A]
µ
 [
R
10
1
0.1
Reverse Current , I 
0.01
TC = 100oC
TC = 25oC
100 200 300 400 500 600
Reverse Voltage , VR [V]
Figure 2. Typical Reverse Current
vs. Revers e Voltag e
90
IF = 60A
80
 [ns]
rr
70
60
50
Reverse Recovery Time , t
40
100 500
di/dt [A/µs]
TC = 25oC
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
20 
18
 [A]
16
rr
14 
12 
10
8 
6 
4 
2
Reverse Recovery Current , I
0
100 500
IF = 60A 
TC = 25oC
di/dt [A/µs]
Figure 5. Typical Reverse Recovery Current
100
 [A]
90
F(AV)
80 
70 
60 
50 
40 
30 
20 
10
Average Forward Current , I
0
60 80 100 120 140 160
DC
Case Temperature , TC [oC]
Figure 6. Forward Current Derati ng Curve
vs. di/dt
©2000 Fai r ch i ld Semiconductor Inter national Rev. F, September 2000

Package Di men sio n s
ø3.20 
±0.10
15.60 
13.60 
9.60 
±0.20
±0.20
±0.20
TO-3P
±0.20
3.80 
4.80 
1.50
±0.20
+0.15 
–0.05
FFA60U60DN
±0.20
13.90 
2.00 
±0.20
3.00 
±0.20
1.00 
±0.20
5.45TYP
[5.45 
±0.30
±0.20
±0.20
±0.20
12.76 
19.90 
23.40 
±0.20
3.50 
±0.30
16.50 
5.45TYP
]
[5.45 
±0.30
]
±0.20
18.70 
1.40 
0.60
±0.20
+0.15
–0.05
©2000 Fairchild Semiconductor International
Dimensions in Millimeters
Rev. F, September 2000

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ACEx™ 
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TM
TM
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®
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or 
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for 
product development. Specifications may change in 
any manner without notice.
This datasheet contains preliminary data, and 
supplementary data will be published at a later date. 
Fairchild Semiconductor reserves the right to make 
changes at any time without notice in order to improve 
design.
This datasheet contains final specifications. Fairchild 
Semiconductor reserves the right to make changes at 
any time without notice in order to improve design.
This datasheet contains specifications on a product 
that has been discontinued by Fairchild semiconductor. 
The datasheet is printed for reference information only.
Rev. F1