Datasheet fdz372nz Datasheet

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Page 1

March 2010

FDZ372NZ

N-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET

20 V, 4.7 A, 50 mΩ Features

 Max r  Max r  Max r  Max r  Occupies only 1.0 mm

area of 2x2 BGA

 Ultra-thin package: less than 0.4 mm height when mounted

to PCB

 HBM ESD protection level > 3200V (Note3)  RoHS Compliant

= 50 mΩ at VGS = 4.5 V, ID = 2 A

DS(on)

= 60 mΩ at VGS = 2.5 V, ID = 2 A

DS(on)

= 72 mΩ at VGS = 1.8 V, ID = 1 A

DS(on)

= 93 mΩ at VGS = 1.5 V, ID = 1 A

DS(on)

of PCB area. Less than 30% of the

General Description

Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ372NZ minimizes both PCB space and r advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r

DS(on)

Applications

 Battery management  Load switch  Battery protection

DS(on)

FDZ372NZ N-Channel 1.5 V Specified PowerTrench

. This

Pin 1

BOTTOM

Pin 1

TOP

WL-CSP 1.0X1.0 Thin

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 20 V Gate to Source Voltage ±8 V Drain Current -Continuous TA = 25 °C (Note 1a) 4.7

-Pulsed 12 Power Dissipation TA = 25 °C (Note 1a) 1.7 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C (Note 1b) 0.5

Thermal Characteristics

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 75 Thermal Resistance, Junction to Ambient (Note 1b) 260

Package Marking and Ordering Information

°C/W

Thin

WL-CSP MOSFET

Device Marking Device Package Reel Size Tape Width Quantity

L FDZ372NZ WL-CSP 1.0x1.0 Thin 7 ’’ 8 mm 5000 units

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Page 2

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV ∆T

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 20 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 16 V, V Gate to Source Leakage Current VGS = ±8 V, V

= 250 µA, referenced to 25 °C 18 mV/°C

= 0 V 1 µA

= 0 V ±10 µA

On Characteristics

GS(th)

∆V ∆T

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA0.40.71V Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

= 250 µA, referenced to 25 °C -3 mV/°C

= 4.5 V, ID = 2 A 40 50

= 2.5 V, ID = 2 A 45 60

= 1.8 V, ID = 1 A 53 72

= 1.5 V, ID = 1 A 63 93

= 4.5V, ID = 2 A, TJ = 125°C 57 81

Forward Transconductance VDS = 5 V, ID = 4.7 A 22 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 85 115 pF Reverse Transfer Capacitance 65 100 pF

= 10 V, VGS = 0 V,

f = 1 MHz

515 685 pF

mΩ

FDZ372NZ N-Channel 1.5 V Specified PowerTrench

Thin

Switching Characteristics

d(on)

d(off)

Q Q Q

g gs gd

Turn-On Delay Time Rise Time 3.6 10 ns Turn-Off Delay Time 26 42 ns Fall Time 5.6 12 ns Total Gate Charge Gate to Source Gate Charge 0.8 nC Gate to Drain “Miller” Charge 1.6 nC

= 10 V, ID = 4.7 A

= 4.5 V, R

= 4.5 V, VDD = 10 V

= 4.7 A

GEN

Drain-Source Diode Characteristics

Notes:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 material . R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 2.6 10 nC

a. 75 °C/W when mounted on a 1 in2 pad of 2 oz copper.

= 0 V, IS = 1.4 A (Note 2) 0.7 1.2 V

= 4.7 A, di/dt = 100 A/µs

= 6 Ω

6.2 12 ns

79.8nC

11 20 ns

is guaranteed by des ign while R

θJC

b. 260 °C/W when mounted on a minimum pad of 2 oz copper.

is determined by

θCA

WL-CSP MOSFET

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.

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Page 3

Typical Characteristics T

= 25 °C unless otherwise noted

FDZ372NZ N-Channel 1.5 V Specified PowerTrench

VGS = 4.5 V VGS = 3 V VGS = 2.5 V VGS = 2 V

VGS = 1.8 V

VGS = 1.5 V

, DRAIN CURRENT (A)

0.0 0.5 1.0 1.5

DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.6

1.4

On-Region Characteristics Figure 2.

ID = 2 A V

= 4.5 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

JUNCTION TEMPERATURE

(

)

Figu r e 3. Nor m a lized O n - R esist a n c e

vs Junction Temperature

2.0

VGS = 1.5 V

1.5

VGS = 1.8 V

VGS = 2 V

1.0

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

0.5

= 2.5 V VGS = 3 V

PULSE DURATION = 80 µ s DUTY CYCLE = 0.5% MAX

= 4.5 V

04812

, DRAIN CURRENT (A)

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

200

)

Ω

(

150

100

DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

0.0 1.5 3.0 4.5

GATE TO SOURCE VOLTA G E (V)

Figure 4.

On-Resistance vs Gate to

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 2 A

TJ = 125 oC

TJ = 25 oC

Source Voltage

Thin

WL-CSP MOSFET

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

= 5 V

TJ = 150 oC

, DRAIN CURRENT (A)

0.5 1.0 1.5 2.0

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

TJ = -55 oC

TJ = 25 oC

= 0 V

TJ = 150 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Dr ain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

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FDZ372NZ N-Channel 1.5 V Specified PowerTrench

Typical Characteristics T

= 25 °C unless otherwise noted

4.5

ID = 4.7 A

VDD = 8 V

3.0

= 10 V

VDD = 12 V

1.5

, GATE TO SOURCE VOLTAGE ( V)

0.0 02468

Figure 7.

-1

= 0 V

-2

-3

-4

-5

-6

-7

-8

GATE LEAKAGE CURRENT (A)

-9

-10

03691215

Qg, GATE CHARGE (nC)

Gate Charge Characteristics Figure 8.

TJ = 125 oC

TJ = 25 oC

GATE TO SOURCE VOLTAG E (V)

Figure 9. Gate Leakage Current vs

Gate to Source Voltage

200 100

1000

iss

100

CAPACITANCE (pF)

f = 1 MHz V

= 0 V

0.01 0.1 1 10

VDS, DRAIN TO SOURCE VOLTAGE (V)

oss

rss

Capacitance vs Drain

to Source Voltage

20 10

100 us

0.1

, DRAIN CURRENT (A)

0.01

0.01 0.1 1 10 100

THIS AREA IS LIMITED BY r

SINGLE PULSE T

VDS, DRAIN to SOURCE VOLTAGE (V)

DS(on)

= MAX RATED

= 260 oC/W

= 25 oC

1 ms

10 ms

100 ms

1 s

10 s DC

Figure 10. Forward Bias Safe Operating Area

SINGLE PULSE

= 260 oC/W

θJA

= 25 oC

Thin

WL-CSP MOSFET

, PEAK TRANSIENT POWER (W)

(PK)

0.4

-4

-3

-2

-1

t, PULSE WIDTH (sec)

110

Figure 11. Single Pulse Maximum Power Dissipation

100 1000

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Page 5

FDZ372NZ N-Channel 1.5 V Specified PowerTrench

Typical Characteristics T

DUTY CYCLE-DESCENDING ORDER

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

-4

-3

Figure 12. Junction-to-Ambient Transient Thermal Response Curve

NORMALIZED THERMAL

θJA

IMPEDANCE,

0.001

0.01

= 25 °C unless otherwise noted

SINGLE PULSE R

= 260 oC/W

θJA

-2

t, RECTANGULAR PULSE DURATION (sec)

-1

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

θJA

1/t2

x R

110

+ T

θJA

100 1000

Thin

WL-CSP MOSFET

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Page 6

Dimensional Outline and Pad Layout

FDZ372NZ N-Channel 1.5 V Specified PowerTrench

Thin

WL-CSP MOSFET

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Page 7

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, o wned by Fairchild Semiconducto r and/or its g lobal subsidiaries, and i s not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™

® ®

F-PFS™

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™

MotionMax™ Motion-SPM™ OptiHiT™ OPTOLOGIC OPTOPLANAR

PDP SPM™

Power-SPM™ PowerTrench PowerXS™ Programmable Active Droop™ QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

®* The Power Franchise

TinyBoost™ TinyBuck™ TinyCalc™

TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* µSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

FDZ372NZ N-Channel 1.5 V Specified PowerTrench

Thin

WL-CSP MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used here in:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or ( b) su pport or susta in life , and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

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application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect our selve s and our customers from the proliferation of counterfeit parts. Fairchild strongly enco urages custome rs to purchase Fairchild parts either dir ectly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I48