Datasheet fdy302nz Datasheet

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Page 1

FDY302NZ

Single N-Channel 2.5V Specified PowerTrench

®®®®

MOSFET

FDY302NZ Single N-Channel 2.5V Specified PowerTrench

July 2006

General Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the R

DS(ON)@VGS

=2.5V.

Applications

• Li-Ion Battery Pack

Features

• 600 mA, 20 V R

• ESD protection diode (note 3)

• RoHS Compliant

= 300 mΩ @ VGS = 4.5 V

DS(ON)

=500 mΩ @ VGS = 2.5 V

DS(ON)

Absolute Maximum Ratings

Symbol Parameter Ratings Unit

TJ,T

Drain-Source Voltage 20 V

Gate-Source Voltage

Drain Current – Continuous

–Pulsed 1000

Power Dissipation (Steady State)

Operating and Storage Junction Temperature

STG

Range

TA=25oC unless otherwise noted

(Note 1a)

(Note 1b)

± 12

600 mA

625 mW

446

–55 to +150

MOSFET

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

200

280

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDY302NZ 7 ’’ 8 mm 3000 units

°C/W

www.fairchildsem i.com

Page 2

FDY302NZ Single N-Channel 2.5V Specified PowerTrench

Electrical Characteristics

TA= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

∆BV

∆T

DSS

GSS

DSS

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current VDS=16V, VGS=0V 1

Gate–Body Leakage,

On Characteristics

GS(th)

∆V

∆T

DS(on)

GS(th)

Gate Threshold Voltage

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source On–Resistance

Forward Transconductance VDS=5V, ID=600mA 1.8 S

(Note 2)

=0V, ID=250µA

= 250 µA, Referenced to 25°C

VGS= ± 12 V, VDS=0V ± 10 µA

= ± 4.5 V, VDS=0V ± 1 µA

,ID= 250 µA

DS=VGS

= 250 µA, Referenced to 25°C

VGS=4.5V, ID=600mA

=2.5V, ID=500mA

=1.8V, ID=150mA

=4.5V,ID=600mA, TJ=125°C

20 V

mV/°C

0.6 1.0 1.5 V

0.24

0.36

0.70

0.35

mV/°C

0.30

0.50

1.20

1.00

Dynamic Characteristics

iss

oss

rss

Switching Characteristics

d(on)

d(off)

Input Capacitance 60 pF

Output Capacitance 20 pF

Reverse Transfer Capacitance

(Note 2)

Turn–On Delay Time 6 12 ns

Turn–On Rise Time 8 16 ns

=10V, VGS=0V,

f=1.0MHz

=10V, ID=1A,

=4.5V, R

GEN

10 pF

=6Ω

Turn–Off Delay Time 8 16 ns

Turn–Off Fall Time

Total Gate Charge 0.8 1.1 nC

Gate–Source Charge 0.16 nC

=10V, ID=600mA,

=4.5V

Gate–Drain Charge

2.4

0.26

4.8 ns

Drain–Source Diode Characteristics and Maximum Ratings

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resis tance where the case thermal reference is defined as the solder mounting surface of

1. R

θJA

the drain pins. R

Drain–Source Diode Forward

VGS=0V, IS=150mA

(Note 2)

0.7 1.2 V

Voltage

Diode Reverse Recovery Time 8 nS

Diode Reverse Recovery Charge

is guaranteed by design while R

θJC

θCA

= 600 mA,

/dt = 100 A/µs

is determined by the user's board design.

1nC

µA

Ω

MOSFET

a) 200°C/W when

mounted on a 1in of 2 oz copper

FDY302NZ Rev A www.fairchil dsemi.com

pad

b) 280°C/W when mounted on a

minimum pad of 2 oz copper Scale1:1onlettersizepaper

2. Pulse T est: Pu lse Widt h < 30 0µs, Duty Cycle < 2.0%

3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied.

Page 3

Typical Characteristics

FDY302NZ Single N-Channel 2.5V Specified PowerTrench

VGS=4.5V

0.8

0.6

0.4

, DRAIN CURRENT (A)

0.2

3.5V

0 0.25 0.5 0.75 1

3.0V

2.5V

, DRAIN-SOURCE VO LTAGE (V)

2.0V

2.6

2.4

VGS=2.0V

2.2

1.8

1.6

,NORMALIZED

1.4

DS(ON)

1.2

DRAIN-SOURCE ON-RESISTANCE

0.8

00.20.40.60.81

2.5V

3.0V

, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

ID= 600mA

=4.5V

1.4

1.2

, NORMALIZED

DS(ON)

0.8

DRAIN-SOURCE O N-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

, JUNCTION T EMPERATURE (oC)

0.9

0.8

0.7

0.6

0.5

, ON-RESISTANCE (OHM)

0.4

DS(ON)

0.3

0.2 12345

TA=25oC

, GATE TO SOURCE VOLTAGE (V)

TA=125oC

3.5V

4.5V

ID= 300mA

MOSFET

Figure 3. On-Resistance Variation with

Temperature.

1.5

VDS=5V

1.2

0.9

0.6

, DRAIN CURREN T (A)

0.3

0.5 1 1.5 2 2.5 3

VGS, GAT E TO SOU RCE VOLT AGE (V)

TA=-55oC

125

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

VGS=0V

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

TA= 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDY302NZ Rev A www.fairchil dsemi.com

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Typical Characteristics

FDY302NZ Single N-Channel 2.5V Specified PowerTrench

ID= 600mA

, GATE-SOURCE VOLTAGE (V)

00.20.40.60.81

VDS=5V

,GATECHARGE(nC)

10V

15V

100

CAPACITANCE (pF)

0 4 8 121620

oss

rss

VDS, DRAIN TO SOU RCE VOLTAGE (V )

iss

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

LIMIT

DS(ON)

100ms

10s

0.1

, DRAIN CURRENT (A) I

VGS=4.5V

SINGLE PULSE

= 280oC/W

=25oC

0.01

0.1 1 10 100

VDS, DRAIN-SOURCE VOLTAGE (V)

1ms

10ms

SINGLE PULSE

P(pk), PEAK TRANSIENT POWER (W)

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

= 280°C/W

= 25°C

f=1MHz

=0V

MOSFET

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

D=0.5

0.2

0.1

0.05

0.02

THERMAL RESISTANCE

0.01

r(t), NORMALIZED EFFECTIVE TRANSIENT

0.01

SINGLE PULSE

(t) = r(t) * R

=280 °C/W

θJA

P(pk)

=P*R

J-TA

Duty Cycle, D = t

(t)

1/t2

0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDY302NZ Rev A www.fairchil dsemi.com

Page 5

Dimensional Outline and Pad Layout

FDY302NZ Single N-Channel 2.5V Specified PowerTrench

0.98

0.78

(0.15)

1.70

1.50

0.35

0.25

1.70

1.50

0.50

1.00

0.78

0.58

1.14

0.50

LAND PATTERN RECOMMENDATION

SEE DETAIL A

0.50

0.66

0.50

1.80

0.20

0.04

MOSFET

0.43

0.28

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE CONFORMS TO EIAJ

B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS,

FDY302NZ Rev A www.fairchil dsemi.com

0.54

0.34

0.10

0.00

SC89 PACKAGING STANDARD.

MOLD FLASH, AND TIE BAR EXTRUSIONS.

DETAIL A

SCALE 2 : 1

Page 6

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK

EfficentMax™ EZSWITCH™*

™*

Fairchild Fairchild Semiconductor FACT Quiet Series™

FACT

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F-PFS™ FRFET Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

FastvCore™ FETBench™ FlashWriter FPS™

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Saving our world, 1mW/W/kW at a time™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™

SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™

™

The Power Franchise

TinyBoost™ TinyBuck™ TinyLogic

TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

XS™

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMI CONDUCTOR RESERVES THE RIGH T TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREI N TO IM PROVE RELIABILITY, FUNCTION, OR DESI GN. FAI RCHILD DO ES NOT ASSUME ANY LI ABILI TY ARISI NG OUT OF THE APPLI CATION OR USE O F ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEI THER DOES IT CONVEY ANY LICENSE UNDER I TS PATENT RIGHTS, NOR THE RI GHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EX PAND THE TERMS OF FAIRCHI LD’S WORLDWIDE TERMS AND CONDITIONS, SPECIF ICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRI TICAL COM PONENTS IN L IFE SUPPORT DEVI CES OR SYSTEM S WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any w arranty issues that may arise. Fairchild w ill not pro vide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I40