Page 1
January 2003
FDV305N
20V N-Channel PowerTrench MOSFET
FDV305N
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• Load switch
• Battery protection
• Power management
Features
• 0.9 A, 20 V R
R
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
DS(ON)
low R
= 220 mΩ @ VGS = 4.5 V
DS(ON)
= 300 mΩ @ VGS = 2.5 V
DS(ON)
D
D
S
G
SOT-23
Absolute Maximum Ratings T
G
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous 0.9 A
– Pulsed 2
PD
TJ, T
STG
Maximum Power Dissipation 0.35
Operating and Storage Junction Temperature Range –55 to +150
± 12
S
V
W
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
357
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
305 FDV305N 7’’ 8mm 3000 units
2003 Fairchild Semiconductor Corporation
°C/W
FDV305N Rev D (W)
Page 2
FDV305N
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆T
I
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
= 0 V, ID = 250 µA
V
GS
I
= 250 µA,Referenced to 25°C
D
20 V
15
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
On–State Drain Current VGS = 4.5V, VDS = 5 V 1 A
D(on)
= VGS, ID = 250 µA
V
DS
I
= 250 µA,Referenced to 25°C
D
= 4.5 V, ID = 0.9 A
V
GS
= 2.5 V, ID = 0.7 A
V
GS
= 4.5V, ID = 0.9 A, TJ = 125°C
V
GS
gFS Forward Transconductance VDS = 5V, ID = 0.9 A 3 S
0.6 1 1.5 V
–3
164
235
220
220
300
303
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance 109 pF
iss
C
Output Capacitance 30 pF
oss
C
Reverse Transfer Capacitance
rss
V
= 10 V, V
DS
f = 1.0 MHz
= 0 V,
GS
14 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 4.5 9 ns
d(on)
tr Turn–On Rise Time 7 14 ns
t
Turn–Off Delay Time 8 16 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 1.1 1.5 nC
Qgs Gate–Source Charge 0.26 nC
Qgd Gate–Drain Charge
= 10 V, ID = 1 A,
V
DD
= 4.5 V, R
V
GS
= 10 V, ID = 0.9 A,
V
DS
= 4.5 V
V
GS
GEN
= 6 Ω
1.4 2.8 ns
0.26 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 0.29 A
VSD Drain–Source Diode Forward
Voltage
trr Diode Reverse Recovery Time 7.4 nS
Qrr Diode Reverse Recovery Charge
Notes:
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VGS = 0 V, IS = 0.29 A 0.75 1.2 V
= 0.9 A,
I
F
= 100 A/µs
d
iF/dt
2.2 nC
FDV305N Rev D (W)
Page 3
Typical Characteristics
FDV305N
2
VGS = 4.5V
3.0V
1
0
0 0.5 1 1.5 2
, DRAIN CURRENT (A)
D
I
1.5
0.5
2.5V
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
2.0V
1.8
1.6
VGS = 2.5V
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
00.511.52
3.0V
3.5V
, DRAIN CURRENT (A)
I
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 0.9A
V
= 4.5V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPE RATURE (oC)
T
J
0.6
0.5
0.4
0.3
, ON-RESISTANCE (OHM)
0.2
DS(ON)
R
0.1
TA = 25oC
12345
V
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
GS
4.0V
4.5V
ID = 0.5A
Figure 3. On-Resistance Variation with
Temperature.
2.5
VDS = 5V
2
1.5
1
, DRAIN CURRENT (A)
D
I
0.5
0
0.5 1 1.5 2 2.5 3
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
125oC
25oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
BODY DIODE FORWARD VOLTAGE (V)
V
SD,
-55oC
with Source Current and Temperature.
FDV305N Rev D (W)
Page 4
)
Typical Characteristics
FDV305N
5
ID = 0.9A
4
3
2
1
, GATE-SOURCE VOLTAGE (V)
GS
V
0
00.511.5
VDS = 5V
, GATE CHARGE (nC)
Q
g
10V
15V
150
C
120
90
60
CAPACITANCE (pF)
30
0
0 5 10 15 20
ISS
C
OSS
C
RSS
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
10
R
LIMIT
DS(ON)
1
100ms
1s
VGS = 4.5V
0.1
SINGLE PULSE
, DRAIN CURRENT (A)
D
I
0.01
= 357oC/W
R
JA
θ
T
= 25oC
A
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
100µs
1ms
10ms
5
4
3
2
1
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
f = 1 MHz
V
= 0 V
GS
SINGLE PULSE
= 357°C/W
R
θJA
T
= 25°C
A
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.01
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
0.001
0.1
0.05
0.02
0.01
SINGLE PULSE
R
(t) = r(t) * R
JA
θ
R
= 357oC/W
JA
θ
P(pk
t
1
- TA = P * R
T
J
Duty Cycle, D = t
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
t
2
JA
θ
(t)
JA
θ
/ t
1
2
FDV305N Rev D (W)
Page 5
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx
ActiveArray
Bottomless
CoolFET
CROSSVOL T
DOME
EcoSPARK
E2CMOS
EnSigna
TM
TM
FACT
FACT Quiet Series
â
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
Across the board. Around the world.
The Power Franchise
Programmable Active Droop
ImpliedDisconnect
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
â
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
â
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
â
VCX
â
â
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
Loading...