Page 1
March 2006
FDD8770/FDU8770 N-Channel PowerTrench
FDD8770/FDU8770
N-Channel PowerTrench® MOSFET
25V, 35A, 4.0mΩ
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(on)
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
G
DS
(TO-251AA)
Features
Max r
Max r
Low gate charge: Q
Low gate resistance
RoHS Compliant
I-PAK
= 4.0mΩ at V
DS(on)
= 5.5mΩ at V
DS(on)
G
D
S
Short Lead I-PAK
= 10V, ID = 35A
GS
= 4.5V, ID = 35A
GS
= 52nC(Typ), VGS = 10V
g(10)
G
E
E
R
F
I
D
A
E
L
M
P
L
E
M
E
N
T
A
T
I
O
N
D
®
MOSFET
S
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter Ratings Units
V
DS
V
GS
Drain to Source Voltage 25 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package Limited) 35
I
D
-Pulsed (Note 1) 407
E
AS
P
D
, T
T
J
STG
Single Pulse Avalanche Energy (Note 2) 113 mJ
Power Dissipation 115 W
Operating and Storage Temperature -55 to 175 °C
Thermal Characteristics
R
θJC
R
θJA
R
θJA
Thermal Resistance, Junction to Case TO-252,TO-251 1.3 °C/W
Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8770 FDD8770 TO-252AA 13’’ 12mm 2500 units
FDU8770 FDU8770 TO-251AA N/A(Tube) N/A 75 units
FDU8770 FDU8770_F071 TO-251AA N/A(Tube) N/A 75 units
©2006 Fairchild Semiconductor Corporation
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com1
A -Continuous (Die Limited) 210
Page 2
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
∆B
∆T
I
DSS
I
GSS
VDSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to
25
°C
VDS = 20V,
V
GS
= 0V
TJ = 150°C 250
13.6 mV/°C
1
Gate to Source Leakage Current VGS = ±20V ±100 nA
FDD8770/FDU8770 N-Channel PowerTrench
µA
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 1.6 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 685 915 pF
Reverse Transfer Capacitance 450 675 pF
Gate Resistance f = 1MHz 1.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 12 22 ns
Turn-Off Delay Time 49 78 ns
Fall Time 25 40 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Gate Charge 8.1 nC
Gate to Drain “Miller”Charge 11 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting T
Source to Drain Diode Forward Voltage
Reverse Recovery Time IF = 35A, di/dt = 100A/µs 32 48 ns
Reverse Recovery Charge IF = 35A, di/dt = 100A/µs 25 38 nC
= 25oC, L = 0.3mH, IAS = 27.5A ,VDD = 23V, VGS = 10V.
J
ID = 250µA, referenced to
25
°C
-5.9 mV/°C
VGS = 10V, ID = 35A 3.3 4.0
VGS = 4.5V, ID = 35A 4.0 5.5
VGS = 10V, ID = 35A
TJ = 175°C
VDS = 13V, VGS = 0V,
4.8 5.9
2795 3720 pF
f = 1MHz
10 20 ns
VDD = 13V, ID = 35A
VGS = 10V, RGS = 5Ω
= 0V to 10V
GS
= 0V to 5V 29 41 nC
GS
V
= 0V, IS = 35A 0.84 1.25
GS
V
= 0V, IS = 15A 0.79 1.0
GS
VDD = 13V
I
= 35A
D
Ig = 1.0mA
52 73 nC
mΩ
®
MOSFET
V
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com2
Page 3
FDD8770/FDU8770 N-Channel PowerTrench
Typical Characteristics T
120
100
80
60
40
, DRAIN CURRENT (A)
D
I
20
0
01234
VGS = 10V
V
GS
VGS = 3.5V
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
1.8
ID = 35A
= 10V
V
GS
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
= 4.5V
= 25°C unless otherwise noted
J
VGS = 3V
Figure 2. Normalized
4
V
= 3V
GS
3
2
NORMALIZED
1
0
DRAIN TO SOURCE ON-RESISTANCE
0 20 40 60 80 100 120
ID, DRAIN CURRENT(A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3.5V
VGS = 4.5V
VGS = 10V
On-Resistance vs Drain
Current and Gate Voltage
12
ID = 35A
10
8
6
, ON-RESISTANCE (mΩ)
4
DS(on)
r
2
246810
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATI ON = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 175oC
TJ = 25oC
®
MOSFET
Figure 3.
Normalized On Resistance vs Junction
120
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
100
80
60
40
, DRAIN CURRENT (A)
D
20
I
0
1.01.52.02.53.03.54.0
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
FDD8770/FDU8770 Rev. A
Temperature
TJ = 175oC
TJ = 25oC
TJ = -55oC
Figure 4.
On-Resistance vs Gate to Source
Voltage
100
V
= 0V
GS
10
TJ = 175oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.00.20.40.60.81.01.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Source to Drain Diode Fo rw ard
TJ = 25oC
TJ = -55oC
Voltage vs Source Current
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Page 4
FDD8770/FDU8770 N-Channel PowerTrench
Typical Characteristics T
10
8
V
= 10V
6
4
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
V
0 102030405060
Figure 7.
50
10
DD
VDD = 16V
Qg, GATE CHARGE(nC)
Gate Charge Characteristics Figure 8.
TJ = 25oC
TJ = 150oC
= 25°C unless otherwise noted
J
VDD = 13V
CAPACITANCE (pF)
TJ = 125oC
6000
C
iss
C
1000
oss
C
rss
f = 1MHz
V
= 0V
GS
100
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Capacitance vs Drain to Source Voltage
250
200
V
= 10V
150
100
V
= 4.5V
GS
GS
30
®
MOSFET
, AVALANCHE CURRENT(A)
AS
I
1
0.01 0.1 1 10 100
Figure 9.
tAV, TIME IN AVALANCHE(ms)
Unclamped Inductive Switching
Capability
600
100
10
LIMITED BY
PACKAGE
1
, DRAIN CURRENT (A)
D
OPERATION IN THIS
I
AREA MAY B E
LIMITED BY r
0.1
110
DS(on)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11.
Forward Bias Safe Operating Area Figure 12. Single
SINGLE PULSE
T
= MAX RATED
J
o
T
= 25
C
C
10us
100us
1ms
10ms
DC
300
50
R
= 1.3oC/W
, DRAIN CURRENT (A)
D
I
Figure 10.
θJC
50
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Maximum Continuous Drain Current vs
Case Temperature
20000
10000
), PEAK TRANSIENT POWER (W)
PK
P(
1000
100
VGS = 10V
SINGLE PULSE
-5
10
10-410-310-210
t, PULSE WIDTH (s)
TC = 25oC
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
Pulse Maximum Power
Dissipation
o
C DERATE PEAK
175 TC–
-----------------------
150
-1
10010
1
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com4
Page 5
FDD8770/FDU8770 N-Channel PowerTrench
Typical Characteristics T
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
θJC
0.1
0.05
0.1
0.02
0.01
0.01
IMPEDANCE, Z
NORMALIZED THERMAL
1E-3
10
SINGLE PULSE
-5
-4
10
Figure 13. Transient Thermal Response Curve
= 25°C unless otherwise noted
J
-3
10
-2
10
t, RECTANGULAR PULSE DURATION(s)
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
θJC
P
DM
t
1
t
2
1/t2
x R
+ T
θJC
C
0
10
1
10
®
MOSFET
FDD8770/FDU8770 Rev. A
www.fairchildsemi.com5
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or syst em s
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identif ica tion Product Stat us Definition
Advance Information Formative or In
Design
Preliminary First Production This datasheet contains preliminary data, and
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I19
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