Datasheet FDT86246 Datasheet (Fairchild)

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FDT86246

SOT-223

N-Channel Power Trench® MOSFET

150 V, 2 A, 236 mΩ

Features

 Max r  Max r  High performance trench technology for extremely low r  High power and current handling capability in a widely used

surface mount package

 Fast switching speed  100% UIL Tested  RoHS Compliant

= 236 mΩ at VGS = 10 V, ID = 2 A

DS(on)

= 329 mΩ at VGS = 6 V, ID = 1.7 A

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been optimized for ruggedness.

Applications

 Load Switch  Primary Switch

December 2010

, switching performance and

DS(on)

process that has

FDT86246 N-Channel Power Trench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Current -Continuous (Note 1a) 2

-Pulsed 8 Single Pulse Avalanche Energy (Note 3) 8 mJ Power Dissipation (Note 1a) 2.2 Power Dissipation (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case (Note 1) 12 Thermal Resistance, Junction to Ambient (Note 1a) 55

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

86246 FDT86246 SOT-223 13 ’’ 12 mm 2500 units

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FDT86246 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 120 V, V Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 104 mV/°C

= 0 V 1 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 3.1 4.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -9 mV/°C

= 10 V, ID = 2 A 194 236

= 6 V, ID = 1.7 A 231 329

= 10 V, ID = 2 A, TJ = 125 °C 349 425

Forward Transconductance VDS = 10 V, ID = 2 A 5 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 21 30 pF Reverse Transfer Capacitance 1.6 5 pF Gate Resistance 0.9 Ω

Switching Characteristics

d(on)

d(off)

g(TOT)

Turn-On Delay Time Rise Time 2.3 10 ns Turn-Off Delay Time 4.6 10 ns Fall Time 1.2 10 ns Total Gate Charge V Total Gate Charge V Total Gate Charge 0.9 nC Gate to Drain “Miller” Charge 0.8 nC

= 75 V, VGS = 0 V,

f = 1 MHz

= 75 V, ID = 2 A,

= 10 V, R

= 0 V to 10 V

= 0 V to 5 V 1.7 3

GEN

= 6 Ω

= 2 A

= 75 V,

161 215 pF

7.8 16 ns

2.9 4 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

NOTES:

is determined with the device mo unted on a 1 i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 m aterial. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

Source to Drain Diode Forward Voltage V Reverse Recovery Time Reverse Recovery Charge 31 49 nC

55 °C/W when mounted on a

pad of 2 oz copper

1 in

= 25 °C; N-ch: L = 1.0 mH, IAS = 4.0 A, VDD = 135 V, VGS = 10 V.

= 0 V, IS = 2 A (Note 2) 0.84 1.3 V

= 2 A, di/dt = 100 A/μs

θJC

44 71 ns

is guaranteed by design while R

118 °C/W when mounted on a minimum pad of 2 oz copper

θCA

is determined by

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FDT86246 N-Channel Power Trench

012345

VGS = 5 V

VGS = 5.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 6 V

VGS = 7 V

VGS = 10 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

02468

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

, DRAIN CURRENT (A)

= 5.5 V

VGS = 6 V

VGS = 7 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.8

1.2

1.6

2.0

2.4

ID = 2 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST ANCE

, JUNCTION TEMPERATURE (

46810

200

400

600

800

TJ = 125 oC

ID = 2 A

TJ = 25 oC

, GATE TO SOURCE VOLTA GE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

234567

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

MOSFET

Normal i z e d O n - R esistance

vs Drain Current and Gate Voltage

Fig u r e 3. Norm a l ized O n - Resista n c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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FDT86246 N-Channel Power Trench

0.0 0.5 1.0 1.5 2.0 2.5 3.0

ID = 2 A

VDD = 50 V

= 100 V

, GATE TO SOURCE VOLTAGE (V)

Qg, GATE CHARGE (nC)

VDD = 75 V

0.1 1 10 100

100

500

f = 1 MHz V

= 0 V

CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

rss

oss

iss

0.001 0.01 0 .1 1

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVA LANCHE (ms)

, AVALANCHE CURRENT (A)

25 50 75 100 125 150

= 6 V

θJC

= 12 oC/W

= 10 V

, DRAIN CURRENT (A)

, CASE TEMPERATURE (

0.1 1 10 100 500

0.005

0.01

0.1

10 s

100 μs

10 ms

1 s

100 ms

1 ms

, DRAIN CURRENT (A)

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS LIMITED BY r

DS(on)

SINGLE PULSE T

= MAX RATED

θJA

= 118

C/W

= 25

10-410-310-210-1110

100 1000

0.5

100

300

SINGLE PULSE R

θJA

= 118

C/W

= 25

), PEAK TRANSIENT POWER (W)

t, PULSE WIDTH (sec)

Typical Characteristics T

Figure 7.

Gate Charge Characteristics Figure 8.

= 25 °C unless otherwise noted

MOSFET

Capacitance vs Drain

to Source Voltage

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

Figure 11.

Operating Area

Forward Bias Safe

Figure 10.

Ma xim um C ont inu ous Dra in

Current vs Case Temperature

Figure 12.

Si ngle Puls e Max imu m

Power Dissipation

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FDT86246 N-Channel Power Trench

-4

-3

-2

-1

110

100 1000

0.005

0.01

0.1

SINGLE PULSE R

θJA

= 118 oC/W

DUTY CYCLE-DESCENDING O R D ER

NORMALIZED THERMAL

IMPEDANCE,

θJA

t, RECTANGULAR PU L SE DURATION (sec)

D = 0.5

0.2

0.1

0.05

0.02

0.01

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

θJA

x R

θJA

+ T

Typical Characteristics T

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

MOSFET

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TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor an d/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™ ESBC™

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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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FDT86246 N-Channel Power Trench

MOSFET

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As used here in:

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Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I51

FDT86246 Rev.C