Page 1
FDFS2P102A
Integrated P-Channel PowerTrench
November 2000
PRELIMINARY
MOSFET and Schottky Diode
FDFS2P102A
General Description
The FDFS2P102A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low onstate resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
–3.3 A, –20V R
•
< 0.39 V @ 1 A (TJ = 125°C)
V
•
F
V
< 0.47 V @ 1 A
F
V
< 0.58 V @ 2 A
F
Schottky and MOSFET incorporated into single
•
power surface mount SO-8 package
Electrically independent Schottky and MOSFET
•
= 125 mΩ @ VGS = –10 V
DS(ON)
R
= 200 mΩ @ VGS = –4.5 V
DS(ON)
pinout for design flexibility
D
D
C
C
SO-8
Pin 1
S
A
A
Absolute Maximum Ratings
G
TA=25oC unless otherwise noted
A
A
S
G
81
C
72
C
63
D
54
D
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
V
RRM
I
O
STG
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
20
–
20
±
3.3
–
10
–
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
55 to +150
–
Schottky Repetitive Peak Reverse Voltage 20 V
Schottky Average Forward Current
(Note 1a)
1A
V
V
A
W
C
°
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDFS2P102A FDFS2P102A 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Inter national
FDFS2P102A Rev A(W)
Page 2
FDFS2P102A
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆
∆
I
DSS
I
GSSF
I
GSSR
DSS
BV
T
Drain–Source Breakdown Voltage
DSS
Breakdown Voltage Temperature
Coefficient
J
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics
V
∆
∆
R
I
D(on)
g
GS(th)
GS(th)
V
T
DS(on)
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
On–State Drain Current VGS = –10 V, VDS = –5 V –10 A
Forward Transconductance VDS = –5V, ID = –3.3 A 4.6 S
(Note 2)
= 0 V, ID = –250 µA
V
GS
I
= –250 µA,Referenced to 25°C
D
= VGS, ID = –250 µA
V
DS
I
= –250 µA,Referenced to 25°C
D
VGS = –10 V, ID = –3.3 A
V
= –4.5 V, ID = –2.5 A
GS
=–10 V, ID =–3.3A, TJ=125°C
V
GS
–20 V
–23
mV/°C
–1 –1.8 –3 V
4.4
96
152
137
125
200
190
mV/°C
m
A
µ
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance 182 pF
Output Capacitance 60 pF
Reverse Transfer Capacitance
(Note 2)
Turn–On Delay Time 5 10 ns
Turn–On Rise Time 14 52 ns
= –10 V, V
V
DS
f = 1.0 MHz
= –10 V, ID = –1 A,
V
DD
= –10 V, R
V
GS
GS
GEN
= 0 V,
= 6
24 pF
Ω
Turn–Off Delay Time 11 20 ns
Turn–Off Fall Time
Total Gate Charge 2.1 3.0 nC
Gate–Source Charge 1.0 nC
V
= –10 V, ID = –3.3 A,
DS
= –5 V
V
GS
Gate–Drain Charge
24ns
0.6 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current –1.3 A
Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A
(Note 2)
–0.8 –1.2 V
Schottky Diode Characteristics
I
R
Reverse Leakage VR = 20 V
= 25°C
T
J
TJ = 125°C
V
F
Forward Voltage IF = 1 A
= 25°C
T
J
TJ = 125°C
IF = 2 A
= 25°C
T
J
TJ = 125°C
50
18 mA
0.47 V
0.39
0.58
0.53
A
µ
FDFS2P102A Rev A(W)
Page 3
Thermal Characteristics
R
JA
θ
R
JC
θ
Notes:
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
1.
JA
θ
the drain pins. R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
is guaranteed by design while R
JC
θ
is determined by the user's board design.
CA
θ
(Note 1a)
(Note 1)
78
40
C/W
°
C/W
°
FDFS2P102A
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2.
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
FDFS2P102A Rev A(W)
Page 4
Typical Characteristics
FDFS2P102A
10
VGS = -10V
-7.0V
8
6
4
2
, DRAIN-SOURCE CURRENT (A)
D
-I
0
012345
-6.0V
-4.5V
-5.0V
, DRAIN-SOURCE VOLTAGE (V)
-V
DS
-4.0V
-3.5V
2.2
2
VGS = -4.0V
1.8
1.6
1.4
, NORMALIZED
DS(ON)
1.2
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0246810
-4.5V
-5.0V
-6.0V
, DRAIN CURRENT (A)
- I
D
-7.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -3.3A
V
= -10V
GS
1.4
1.2
1
, NORMALIZED
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
0.52
0.46
0.4
0.34
0.28
0.22
, ON-RESISTANCE (OHM)
0.16
TA = 25oC
DS(ON)
R
0.1
0.04
246810
TA = 125oC
-V
, GATE TO SOURCE VOLTAGE (V)
GS
-10V
ID = -1.7A
Figure 3. On-Resistance Variation with
Temperature.
10
VDS = -5V
8
6
4
, DRAIN CURRENT (A)
D
-I
2
0
12345
, GATE TO SOURCE VOLTAGE (V)
-V
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
, BODY DIODE F O RWARD VOLTAGE (V)
-V
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDFS2P102A Rev A(W)
Page 5
Typical Characteristics
FDFS2P102A
10
ID = -3.3A
8
VDS = -5V
-10V
-15V
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
-V
0
01234
, GATE CHARGE (nC)
Q
g
300
250
C
200
ISS
150
100
CAPACITANCE (pF)
50
0
0 5 10 15 20
C
OSS
C
RSS
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
10
1
0.1
TJ = 125oC
TJ = 25oC
0.01
, FORWARD LEAKAGE CURRENT (A)
0.001
F
I
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
, FORWARD VOLTAGE (V)
V
F
1.0E-02
1.0E-03
TJ = 125oC
1.0E-04
1.0E-05
1.0E-06
, REVERSE LEAKAGE CURRENT (A)
R
I
1.0E-07
0 5 10 15 20
TJ = 25oC
V
, REVERSE VOLTAGE (V)
R
f = 1MHz
V
= 0 V
GS
Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.01
SINGLE PULSE
R
(t) = r(t) + R
JA
θ
R
= 135 °C/W
JA
θ
P(pk)
t
1
t
2
- TA = P * R
T
J
Duty Cycle, D = t
JA
θ
(t)
JA
θ
/ t
1
2
0.001 0.01 0.1 1 10 100 1000
t
, TIM E (sec )
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDFS2P102A Rev A(W)
Page 6
SOIC-8 Tape and Reel Data
SOIC(8lds) Packaging
Configuration: Figure 1.0
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS
TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms
MAX _____________ gms
ESD Label
Embossed Car rier Tape
Customized
Label
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no flow code)
2,500
13" Dia
343x64x343
5,000
0.0774
0.6060
TNR
L86Z
Rail/Tube
95
-
530x130x83
30,000
0.0774
-
F011
TNR
4,000
13" Dia
343x64x343
8,000
0.0774
0.9696
Antistatic Cover Tape
Static Dissipative
F63TNR
Label
D84Z
TNR
500
7" Dia
184x18 7x47
1,000
0.0774
0.1182
Packaging Description:
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 uni t s pe r 13" o r 33 0c m d ia met er reel . Th e reel s ar e
dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or
177cm di ameter reel. This and some o ther options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in di ff ere nt siz es depe nd in g on th e num be r of pa rts
shippe d.
F
NDS
9959
852
F
NDS
9959
852
SOIC-8 Unit Orientation
343mm x 342mm x 64mm
Stand a r d In t e rm ed iate box
F
852
NDS
9959
852
852
F
NDS
9959
F
NDS
9959
Pin 1
F63TNR Label sample
LOT: CBVK741B019
FSID: FDS9953A
D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:
QTY: 2500
SPEC:
N/F: F (F63TNR)3
SOIC(8lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
©2000 Fairchild Semiconductor International
Trailer Tape
640mm minimum or
80 empty pockets
F63TNLab el
ESD Label
Components
ESD Label
F63TNLabel
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
Page 7
SOIC-8 Tape and Reel Data, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
T
K0
Wc
B0
P0
D0
E1
F
W
E2
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
SOIC
(12mm)
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
SOIC(8lds) Reel Configuration: Figure 4.0
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
(8lds)
6.50
5.30
12.0
1.55
1.60
1.75
10.25
+/-0.10
+/-0.10
+/-0.3
+/-0.05
+/-0.10
+/-0.10
rotational and lateral movement requirements (see sketches A, B, and C).
B0
20 deg maximum component rotation
Sketch A (Side or Front Sectional View)
Component Rotation
5.50
min
+/-0.05
20 deg maximum
A0
Sketch B (Top View)
Component Rotation
W1 Measured at Hub
8.0
+/-0.1
Typical
component
cavity
center line
Typical
component
center line
Dim A
Max
4.0
+/-0.1
0.450
2.1
+/-0.10
0.5mm
maximum
Sketch C (Top View)
Component lateral movement
+/-
0.150
9.2
+/-0.3
0.5mm
maximum
0.06
+/-0.02
Dim A
max
Tape Size
12mm 7" Dia
12mm 13" D ia
1998 Fairchild Semiconductor Corporation
Reel
Option
Dim N
Diameter Option
7"
See detail AA
B Min
Dim C
13" Diameter Option
See detail AA
W2 max Measured at Hub
Dim D
W3
min
DETAIL AA
Dimensions are in inches and millimeters
Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
7.00
0.059
177.8
13.00
330
1.5
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
512 +0.020/-0.008
13 +0.5/-0.2
0.795
2.165550.488 +0.078/-0.000
20.2
0.795
7.00
20.2
178
12.4 +2/0
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.724
18.4
0.469 – 0.606
11.9 – 15.4
0.469 – 0.606
11.9 – 15.4
July 1999, Rev. B
Page 8
SOIC-8 Package Dimensions
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Di m ensi ons s h ow n be low ar e i n:
inches [m ill imet ers]
Part Weight per unit (gram): 0.0774
9
©2000 Fairchild Semiconductor International
September 1998, Rev. A
Page 9
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
®
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
POP™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
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