Page 1
FDS9958_F085 Dual P-Channel PowerTrench
November 2008
FDS9958
_F085
Dual P-Channel PowerTrench® MOSFET
-60V, -2.9A, 105mΩ
Features
Max r
Max r
Qualified to AEC Q101
RoHS Compliant
=105mΩ at VGS = -10V, ID = -2.9A
DS(on)
=135mΩ at VGS = -4.5V, ID = -2.5A
DS(on)
D1
D1
Pin 1
D2
D2
G2
S2
G1
S1
SO-8
General Description
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D2
D1
D1
®
®
MOSFET
G2
5
Q2Q1Q2
6
7
Q1
8
4
S2
3
G1
2
S1
1
MOSFET Maximum Ratings
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage -60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) -2.9
-Pulsed -12
Single Pulse Avalanche Energy (Note 3) 54 mJ
Power Dissipation for Dual Operation 2
Power Dissipation (Note 1b) 0.9
Operating and Storage Junction Temperature Range -55 to +150 °C
TA = 25°C unless otherwise noted
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 40
Thermal Resistance, Junction to Ambient (Note 1a) 78
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS9958
©2
008 Fairchild Semiconductor Corporation
FDS9958_F085 Rev.A
FDS9958_F085
°C/W
SO-8 330mm 12mm 2500units
1
www.fairchildsemi.com
A
WPower Dissipation (Note 1a) 1.6
Page 2
FDS9958_F085 Dual P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -60 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V, V
ID = -250µA, referenced to 25°C -52 mV/°C
VDS = -48V, -1
V
= 0V TJ = 125°C -100
GS
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.6 -3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = -5V, ID = -2.9A 7.7 S
ID = -250µA, referenced to 25°C 4 mV/°C
VGS = -10V, ID = -2.9A 82 105
VGS = -10V, ID = -2.9A, TJ= 125°C 131 190
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 90 120 pF
Reverse Transfer Capacitance 40 65 pF
VDS = -30V, VGS = 0V,
f = 1MHz
765 1020 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 3 10 ns
Turn-Off Delay Time 27 43 ns
VDD = -30V, ID = -2.9A,
VGS = -10V, R
GEN
= 6Ω
6 12 ns
Fall Time 6 12 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 2 nC
= 0V to -10V
GS
= 0V to -4.5V 8 12 nC
GS
VDD = -30V,
ID = -2.9A
16 23 nC
Gate to Drain “Miller” Charge 3 nC
µA
mΩVGS = -4.5V, ID = -2.5A 103 135
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 m aterial. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T
008 Fairchild Semiconductor Corporation
©2
_F085 Rev.A
FDS9958
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge 21 35 nC
= 25°C, L = 3mH, I
J
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper
= 6A, VDD = 60V, VGS = 10V.
AS
= 0V, IS = -1.3A (Note 2) -0.8 -1.2 V
GS
IF = -2.9A, di/dt = 100A/µs
θJC
2
26 42 ns
is guaranteed by design while R
b) 135°C/W when
mounted on a
minimun pad
θCA
www.fairchildsemi.com
is determined by
Page 3
FDS9958_F085 Dual P-Channel PowerTrench
Typical Characteristics T
12
VGS = -10V
10
8
6
4
, DRAIN CURRENT (A)
D
2
-I
0
01234
-V
DS
Figure 1.
On-Region Characteristics
1.8
ID = -2.9A
V
GS
= -10V
1.6
1.4
1.2
NORMALIZED
1.0
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.6
-75 -50 -25 0 25 50 75 100 125 150
T
, JUNCTION T EMPERATURE (
J
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
VGS = - 4V
VGS = -5V
VGS = - 4.5V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
, DRAIN TO SOURCE VOLTAGE (V)
= 25°C unless otherwise noted
J
VGS = -3.5V
VGS = -3V
o
C)
2.5
VGS = -3V
2.0
1.5
NORMALIZED
1.0
PULSE DURATION = 300µs
DRAIN TO SOURCE ON-RESISTANCE
0.5
Figure 2.
DUTY CYCLE = 2.0 %MAX
024681012
-I
D
N o r m a l i z e d O n - R e s i s t a n c e
VGS = -3.5V
VGS = -4.5V
, DRAIN CURRENT(A)
VGS = -4V
V
= -5V
GS
V
= -10V
GS
vs Drain Current and Gate Voltage
240
210
ID = -2.9A
(mΩ)
180
150
, DRAIN TO
120
DS(on)
r
90
SOURCE ON-RESISTANCE
60
246810
-V
, GATE TO SOURCE VOLTAGE (V)
GS
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
TJ = 125oC
o
T
= 25
C
J
Source Voltage
®
MOSFET
12
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
10
V
= -5V
DD
8
6
4
, DRAIN CURRENT (A)
D
2
-I
0
012345
TJ = 150oC
TJ = 25oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
008 Fairchild Semiconductor Corporation
©2
_F085 Rev.A
FDS9958
TJ = -55oC
20
10
V
= 0V
GS
1
0.1
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
3
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Page 4
FDS9958_F085 Dual P-Channel PowerTrench
Typical Characteristics T
10
ID = -2.9A
8
6
4
VDD = -30V
2
, GATE TO SOURCE VOLTAGE(V)
GS
-V
0
0 5 10 15 20
Figure 7.
4
3
2
, AVALANCHE CURRENT(A)
AS
-I
1
0.01 0.1 1 10 100
Figure 9.
Switching Capability
V
= -20V
DD
VDD = -40V
Qg, GATE CHARGE(nC)
Gate Charge Characteristics
TJ = 125oC
tAV, TIME IN AVALANCHE(ms)
U n c l a m p e d I n d u c t i v e
= 25°C unless otherwise noted
J
TJ = 25oC
2000
1000
C
iss
100
CAPACITANCE (pF)
f = 1MHz
V
= 0V
GS
10
0.1 1 10
-VDS, DRAIN T O SOURCE VOLT AGE (V)
Figure 8.
C a p a c i t a n c e v s D r a i n
C
oss
C
rss
to Source Voltage
3.0
2.5
2.0
V
GS
= -4.5V
V
1.5
1.0
, DRAIN CURRENT (A)
-I
R
D
θJA
= 78oC/W
0.5
0.0
25 50 75 100 125 150
T
, AMBIENT TEMPERATURE (
A
Figure 10.
M a x i m u m C o n t i n u o u s D r a i n
Current vs Ambient Temperature
60
®
MOSFET
= -10V
GS
o
C)
20
10
1
THIS AREA IS
LIMITED BY r
0.1
, DRAIN CURRENT (A)
D
-I
0.01
0.1 1 10 100
DS(on)
SINGLE PULSE
= MAX RATED
T
J
R
= 135
θJA
o
T
= 25
C
A
-VDS, DRAIN to SOURCE VOLTAGE (V)
F ig u re 1 1. F or w ar d B ia s Sa f e
Operating Area
008 Fairchild Semiconductor Corporation
©2
_F085 Rev.A
FDS9958
o
C/W
200
0.1ms
1ms
10ms
100ms
1s
10s
DC
200
100
10
1
), PEAK TRANSIENT POWER (W)
PK
P(
0.5
Figure 12.
VGS = -10V
10-310-210
t, PULSE WIDTH (s)
S i n g l e P u l s e M a x i m u m
SINGLE PULSE
o
= 135
θJA
A
= 25
C/W
o
C
3
R
T
-1
0
10
10110210
Power Dissipation
4
www.fairchildsemi.com
Page 5
FDS9958_F085 Dual P-Channel PowerTrench
Typical Characteristics T
NORMALIZED THERMAL
θJA
Z
0.1
IMPEDANCE,
0.01
0.005
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
-3
10
10
-2
= 25°C unless otherwise noted
J
SINGLE PULSE
= 135oC/W
R
θJA
10
-1
t, RECTANGULAR PULSE DURATION (s)
0
10
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
1
10
Figure 13. Transient Thermal Response Curve
P
DM
t
1
t
2
2
x R
+ T
θJA
θJA
A
2
10
3
10
®
MOSFET
008 Fairchild Semiconductor Corporation
©2
_F085 Rev.A
FDS9958
5
www.fairchildsemi.com
Page 6
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FDS9958_F085 N-Channel PowerTrench
®
MOSFET
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Rev. I37
FDS9958_F085 Rev.A www.fairchildsemi.com7
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