Datasheet FDS9953A Datasheet (Fairchild Semiconductor)

FDS9953A

Dual 30V P-Channel PowerTrench MOSFET

May 2001

General Description

This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).

Applications

• Power management

• Load switch

• Battery protection

D1

D

D1

D

D2

D

D2

D

S2

S

G2

S

G1

G

S1

S

o

=25

C unless otherwise noted

A

SO-8

Pin 1

Absolute Maximum Ratings T

Features

• –2.9 A, –30 V R R

• Low gate charge (2.5nC typical)

• Fast switching speed

• High performance trench technology for extremely

low R

• High power and current handling capability

DS(ON)

5 6 7 8

= 130 mΩ @ VGS = –10 V

DS(ON)

= 200 mΩ @ VGS = –4.5 V

DS(ON)

4

Q1

Q2

3 2 1

Symbol Parameter Ratings Units

V

Drain-Source Voltage

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) – Pulsed PD

TJ, T

STG

Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) (Note 1c)

Operating and Storage Junction Temperature Range –55 to +150 °C

–30

±25

±2.9

±10

1

0.9

V V A

W

Thermal Characteristics

R

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

θJA

R

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

θJC

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS9953A FDS9953A 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation FDS9953A Rev B(W)

FDS9953A

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics

BV

DSS

∆BVDSS ∆TJ

I

Zero Gate Voltage Drain Current

DSS

I

Gate–Body Leakage, Forward

GSSF

I

GSSR

Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient

Gate–Body Leakage, Reverse

VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C VDS = –24 V, VGS = 0 V –2

VGS = –25 V, VDS = 0 V –100 nA VGS = 25 V, VDS = 0 V 100 nA

–30 V

–23

mV/°C

µA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain–Source

On–Resistance

VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C

VGS = –10 V, ID = –1 A VGS = –10 V, ID = –1 A, TJ=125°C VGS = –4.5 V, ID = –0.5 A VGS = –4.5 V, ID = –0.5 A, TJ=125°C

I

On–State Drain Current

D(on)

VGS = –10 V, VDS = –5 V –5 VGS = –4.5 V, VDS = –5 V –1.5

gFS Forward Transconductance VDS = –15 V, ID = –1 A 4 S

–1 –1.8 –3.0 V

4 95

137 142 202

130 200 200

310

mV/°C

m Ω

A

Dynamic Characteristics

C

Input Capacitance 185 pF

iss

C

Output Capacitance 56 pF

oss

C

Reverse Transfer Capacitance

rss

VDS = –15 V, V f = 1.0 MHz

= 0 V,

GS

26 pF

Switching Characteristics (Note 2)

t

Turn–On Delay Time 4.5 9 ns

d(on)

tr Turn–On Rise Time 13 23 ns t

Turn–Off Delay Time 11 20 ns

d(off)

tf Turn–Off Fall Time Qg Total Gate Charge 2.5 3.5 nC Qgs Gate–Source Charge 0.8 nC Qgd Gate–Drain Charge

VDD = –15 V, ID = –1 A, VGS = –10 V, R

GEN

= 6 Ω

VDS = –5 V, ID = –1 A, VGS = –10 V

2 4 ns

0.9 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward

VGS = 0 V, IS = –1.3 A (Note 2) –0.8 1.3 V

Voltage

trr Reverse Recovery Time VGS = 0 V, IF = –1.25A,

dIF/dt = 100A/µs

–1.2

A

17 100 nS

FDS9953A Rev B(W)

FDS9953A

Typical Characteristics

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

a) 78°C/W when

mounted on a

0.5in2 pad of 2 oz copper

b) 125°C/W when

mounted on a

0.02 in2 pad of 2 oz copper

c) 135°C/W when

mounted on a minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

FDS9953A Rev B(W)

FDS9953A

Typical Characteristics

10

VGS = -10V

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

0 1 2 3 4 5

-6.0V

-4.5V

-4.0V

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

-3.5V

-3.0V

3.5

3

VGS = -3.5V

2.5

2

, NORMALIZED

1.5

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.5

0 2 4 6 8 10

-4.0V

-4.5V

, DRAIN CURRENT (A)

-I

D

-5.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 ID = -1A

= -10V

V

GS

1.4

1.2

, NORMALIZED

1

DS(ON)

R

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (oC)

J

0.5

0.4

0.3

0.2

, ON-RESISTANCE (OHM)

0.1

DS(ON)

R

TA = 125oC

TA = 25oC

0

2 4 6 8 10

-V

, GATE TO SOURCE VOLTAGE (V)

GS

-6.0V

-10V

ID = -0.5 A

Figure 3. On-Resistance Variation with

Temperature.

6

VDS = -5V

5

4

3

2

, DRAIN CURRENT (A)

D

-I

1

0

1.5 2 2.5 3 3.5 4 4.5

-V

, GATE TO SOURCE VOLTAGE (V)

GS

TA = -55oC

25oC

125oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

, BODY DIODE FORWARD VOLTAGE (V)

-V

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9953A Rev B(W)

P(pk)

SINGLE PULSE

0.01

0.1

0.2

FDS9953A

Typical Characteristics

10

ID =-1.0 A

8

6

4

2

, GATE-SOURCE VOLTAGE (V)

GS

-V

0

0 1 2 3 4 5

Q

, GATE CHARGE (nC)

g

VDS = -5V

-15V

-10V

300

250

200

150

100

CAPACITANCE (pF)

50

0

0 5 10 15 20 25 30

C

ISS

C

OSS

C

RSS

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

10

R

LIMIT

DS(ON)

1

VGS = -10V

, DRAIN CURRENT (A)

0.1

SINGLE PULSE

D

-I

= 135oC/W

R

θJA

T

= 25oC

A

0.01

0.1 1 10 100

-V

, DRAIN-SOURCE VOLTAGE (V)

DS

1s

10s

DC

100ms

10ms

1ms

100µs

50

40

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

t

, TIME (sec)

1

SINGLE PULSE

R

f = 1MHz V

GS

= 135°C/W

θ

JA

= 25°C

T

A

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.1

0.05

0.02

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

JA

R

(t) = r(t) + R

θ

RθJA = 135 °C/W

t1

T

J - TA = P * R

Duty Cycle, D = t

JA

θ

t2

JA

(t)

θ

1 / t2

0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS9953A Rev B(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ Bottomless™ CoolFET™ CROSSVOL T™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS EnSigna

TM

FACT™ FACT Quiet Series™



FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™

OPTOPLANAR™ PACMAN™ POP™ PowerTrench



QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART ST ART™ Stealth™



SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET



VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H2