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G
FDS9945
FDS9945
60V N-Channel PowerTrench MOSFET
February 2001
General Description
These N Channel Logic Level MOSFET have been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
The MOSFET feature faster switching and lower gate
charge than other MOSFET with comparable RDS(on)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D1
D
D1
D
D2
D
D2
D
S2
S
G2
S
G1
S1
S
o
=25
C unless otherwise noted
A
SO-8
SO-8
Pin 1
Absolute Maximum Ratings T
Features
• 3.5 A, 60 V. R
R
• Optimized for use in switching DC/DC converters
with PWM controllers
• Very fast switching
• Low gate charge.
5
6
7
8
= 0.100Ω @ VGS = 10 V
DS(ON)
= 0.200Ω @ VGS = 4.5V
DS(ON)
4
Q1
Q2
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 60 V
DSS
V
Gate-Source Voltage ±20 V
GSS
ID Drain Current – Continuous (Note 1a) 3.5 A
– Pulsed 10
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range -55 to +175 °C
1.6
1.0
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 (steady state), 50 (10 sec) °C/W
θJA
R
Thermal Resistance, Junction-to-Ambient (Note 1c) 135 °C/W
θJA
R
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
θJC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9945 FDS9945 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation FDS9945 Rev B(W)
Page 2
FDS9945
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C 62.5 mV/°C
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 2.5 3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 3.5 A
VGS = 4.5V, ID = 2.5 A
VGS= 10 V, ID =3.5A, TJ=125°C
–6 mV/°C
74
103
126
100
200
170
m Ω
On–State Drain Current VGS = 10 V, = VDS =30 V 10 A
gFS Forward Transconductance VDS = 5V, ID = 3.5 A 8.6 S
Dynamic Characteristics
C
Input Capacitance 420 pF
iss
C
Output Capacitance 48 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 30 V, V
f = 1.0 MHz
= 0 V,
GS
20 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 4.3 8.6 ns
t
Turn–Off Delay Time 19 34 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 8 13 nC
Qgs Gate–Source Charge 4 nC
Qgd Gate–Drain Charge
VDD = 30 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 30 V, ID = 3.5 A,
VGS = 5 V
3 6 ns
2.5 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
Notes:
1. R
θJA
the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Drain–Source Diode Forward
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 78°/W when
mounted on a 0.5in2
pad of 2 oz copper
is determined by the user's board design.
θCA
VGS = 0 V, IS = 2.1 A (Note 2) 0.8 1.2 V
b) 125°/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°/W when mounted on a
minimum pad.
FDS9945 Rev B(W)
Page 3
I
, DRAIN CURRENT (A)
= 4.0V
C
25oC
125oC
FDS9945
Typical Characteristics
20
15
10
D
5
0
VGS = 10V
0 1 2 3 4 5
6.0V
5.0V
4.5V
4.0V
VDS, DRAIN-SOURCE VOLTAGE (V)
2.2
2
V
GS
1.8
1.6
1.4
, NORMALIZED
DS(ON)
1.2
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 3 6 9 12 15
4.5V
5.0V
ID, DRAIN CURRENT (A)
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
2
ID = 3.5A
1.8
VGS = 10V
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
, ON-RESISTANCE (OHM)
R
Drain Current and Gate Voltage.
0.25
0.2
o
TA = 125
0.15
0.1
DS(ON)
0.05
2 4 6 8 10
TA = 25oC
VGS, GATE TO SOURCE VOLTAGE (V)
10V
ID = 1.75A
Figure 3. On-Resistance Variation
withTemperature.
10
VDS = 5V
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
2 2.5 3 3.5 4 4.5 5
VGS , GATE TO SOURCE VOLTAGE (V)
TA = -55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
Figure 4. On-Resistance Variation with
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
with Source Current and Temperature.
Gate-to-Source Voltage.
VGS = 0V
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
FDS9945 Rev B(W)
Page 4
= 0 V
1s
1ms
TRANSIENT THERMAL RESISTANCE
P(pk)
0.02
0.1
0.2
D = 0.5
FDS9945
Typical Characteristics
10
ID = 3.5A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
0 4 8 12 16
Qg, GATE CHARGE (nC)
VDS = 20V
40V
30V
600
500
400
300
200
CAPACITANCE (pF)
100
0
0 5 10 15 20 25 30
C
OSS
C
RSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
10
R
LIMIT
DS(ON)
1
, DRAIN CURRENT (A)
D
I
VGS = 10V
SINGLE PULSE
0.1
R
= 135oC/W
JA
θ
TA = 25oC
0.01
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10ms
100ms
10s
100µs
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
SINGLE PULSE
R
θJA
TA = 25°C
f = 1MHz
V
GS
= 135°C/W
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
RθJA(t) = r(t) + RθJA
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
0.05
0.01
SINGLE PULSE
t1, TIME (sec)
RθJA = 135 °C/W
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 / t
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
t1
t
2
2
FDS9945 Rev B(W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
FAST
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
P ACMAN™
POP™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART ST ART™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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