Datasheet fds9933 Datasheet

FDS9933

FDS9933

Dual P-Channel 2.5V Specified PowerTrench MOSFET

September 2006

General Description

This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).

Applications

• Load switch

• Motor drive

• DC/DC conversion

• Power management

D1

D

D1

D

D2

D

D2

D

SO-8

Pin 1

SO-8

S2

Absolute Maximum Ratings T

G1

G

S1

S

G2

S

S

o

=25

A

C unless otherwise noted

Features

• –5 A, –20 V, R
R

• Extended V

• Low gate charge

• High performance trench technology for extremely

low R

• High power and current handling capability

DS(ON)

GSS

5
6
7
8

= 55 mΩ @ VGS = –4.5 V

DS(ON)

= 90 mΩ @ VGS = –2.5 V

DS(ON)

range (±12V) for battery applications

4

Q1

Q2

3
2
1

Symbol Parameter Ratings Units

V

Drain-Source Voltage

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a)
– Pulsed
PD

TJ, T

STG

Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range –55 to +175

–20
±12

–5

–30

W

1

0.9
°C

V
V
A

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 40

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

2006 Fairchild Semiconductor International

9933 FDS9933 13’’ 12mm 2500 units

°C/W
°C/W

FDS9933 Rev C

FDS9933

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current

DSS

I

Gate–Body Leakage

GSS

Breakdown Voltage Temperature
Coefficient

J

V

= 0 V, ID = –250 µA

GS

I

= –250 µA, Referenced to 25°C

D

= –16 V, VGS = 0 V –1

V

DS

= ±12 V, VDS = 0 V ±100 nA

V

GS

–20 V

–12

mV/°C

µA

On Characteristics (Note 2)

–0.

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current

D(on)

V

= VGS, ID = –250 µA

DS

I

= –250 µA, Referenced to 25°C

D

V

= –4.5 V, ID = –3.2 A

GS

= –2.5 V, ID = –1.0 A

V

GS

= –4.5 V, VDS = –5 V –16 A

V

GS

6 –0.8 –1.2 V

3

44

72

55
90

mV/°C

mΩ

gFS Forward Transconductance VDS = –9 V, ID = –3.4 A 8 S

Dynamic Characteristics

= –10 V, V

V

C

Input Capacitance 825 pF

iss

C

Output Capacitance 420 pF

oss

C

Reverse Transfer Capacitance

rss

DS

f = 1.0 MHz

= 0 V,

GS

150 pF

Switching Characteristics (Note 2)

= –10 V, ID = –1 A,

V

t

Turn–On Delay Time 16 40 ns

d(on)

tr Turn–On Rise Time 46 80 ns
t

Turn–Off Delay Time 40 70 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 10 20 nC
Qgs Gate–Source Charge 2.1 nC
Qgd Gate–Drain Charge

DD

= –4.5 V, R

V

GS

= –6 V, ID = –3.2A,

V

DS

V

= –4.5 V

GS

GEN

= 6 Ω

25 40 ns

3.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward

VGS = 0 V, IS = –2.0 A (Note 2) –0.7 –1.2 V

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

a) 78°C/W when

mounted on a

0.5in2 pad of 2
oz copper

is determined by the user's board design.

θCA

b) 125°C/W when

mounted on a

0.02 in2 pad of
2 oz copper

–2.0

c) 135°C/W when

mounted on a
minimum pad.

A

FDS9933 Rev C

Typical Characteristics:

FDS9933

30

VGS = -4.5V

-4.0V

20

10

, DRAIN CURRENT (A)

D

-I

0

0 1 2 3 4 5

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

-3.5V

-3.0V

-2.5V

-2.0V

1.8

VGS=-2.5V

1.6

1.4

, NORMALIZED

1.2

DS(ON)

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8
0 6 12 18 24 30

-3.0V

, DRAIN CURRENT (A)

-I

D

-3.5V

-4.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.4

ID = -5A

1.3

= -4.5V

V

GS

1.2

1.1

, NORMALIZED

1

DS(ON)

R

0.9

DRAIN-SOURCE ON-RESISTANCE

0.8

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.14

0.12

0.1

0.08

0.06

, ON-RESISTANCE (OHM)

DS(ON)

R

0.04

0.02

TA = 25oC

0 2 4 6 8 10

-V

TA = 125oC

, GATE TO SOURCE VOLTAGE (V)

GS

-4.5V

ID = -2.5A

Figure 3. On-Resistance Variation with

Temperature.

30

VDS = -5V

25

20

15

10

, DRAIN CURRENT (A)

D

-I

5

0

0 1 2 3 4 5

-V

TA = -55oC

, GATE TO SOURCE VOLTAGE (V)

GS

125oC

25oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

VGS =0V

10

1

TA = 125oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

0.001

S

-I

0.0001
0 0.4 0.8 1.2 1.6

25oC

-55oC

-V

BODY DIODE FORWARD VOLTAGE (V)

SD,

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9933 Rev C

Typical Characteristics:

1ms

P(pk)

SINGLE PULSE

0.01

0.02

0.05

0.1

FDS9933

5

ID = -5A

4

3

VDS = -4V

-8V

-6V

1600

1200

C

iss

800

2

, GATE-SOURCE VOLTAGE (V)

1

GS

-V

0

0 2 4 6 8 10

Q

, GATE CHARGE (nC)

g

CAPACITANCE (pF)

400

C

rss

0

0 4 8 12 16 20

C

oss

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100

R

LIMIT

DS(ON)

10

100ms

1s

1

, DRAIN CURRENT (A)

D

-I

0.01

VGS = -4.5V

SINGLE PULSE

0.1
= 135oC/W

R

θJA

T

= 25oC

A

0.1 1 10 100

-V

DS

10s

DC

, DRAIN-SOURCE VOLTAGE (V)

100µs

10ms

50

SINGLE PULSE

40

R

30

20

10

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

= 135°C/W

θ

JA

= 25°C

T

A

f = 1 MHz

= 0 V

V

GS

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

D = 0.5

0.2

R

(t) = r(t) * R

θJA

R

θJA

= 135oC/W

0.1

t

1

t

0.01

r(t), NORMALIZED EFFECTIVE

0.001

TRANSIENT THERMAL RESISTANCE

0.0001 0.001 0.01 0.1 1 10 100 1000

t

, TIME (sec)

1

2

- TA = P * R

T

J

Duty Cycle, D = t

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

θJA

(t)

θJA

/ t

1

2

FDS9933 Rev C

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intended to be an exhaustive list of all such trademarks.

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®

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WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or syste ms are devices or syst ems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) wh ose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.

PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for

Preliminary First Production This datasheet contains preliminary data, and

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Obsolete Not In Production This datasheet contains specifications on a product

product development. Specifications may change in
any manner without notice.

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.

Semiconductor reserves the right to make changes at
any time without notice to improve design.

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I20