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FDS9435A
FDS9435A
30V P-Channel PowerTrench MOSFET
October 2001
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
• Power management
• Load switch
• Battery protection
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• –5.3 A, –30 V R
R
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 50 mΩ @ VGS = –10 V
DS(ON)
= 80 mΩ @ VGS = –4.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –30 V
DSS
V
Gate-Source Voltage ±25 V
GSS
ID Drain Current – Continuous (Note 1a) –5.3 A
– Pulsed –50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +175 °C
1.2
1
W
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS9435A FDS9435A 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation FDS9435A Rev D1(W)
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FDS9435A
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C –23 mV/°C
Gate–Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –25 V VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
VGS = –10 V, ID = –5.3 A
VGS = –4.5 V, ID = –4 A
VGS= –10 V, ID = –5.3 A, TJ=125°C
4.5 mV/°C
42
50
65
57
m Ω
80
77
On–State Drain Current VGS = –10 V, VDS = –5 V –25 A
gFS Forward Transconductance VDS = –5 V, ID = –5.3 A 10 S
Dynamic Characteristics
C
Input Capacitance 528 pF
iss
C
Output Capacitance 132 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –15 V, V
f = 1.0 MHz
= 0 V,
GS
70 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 7 14 ns
d(on)
tr Turn–On Rise Time 13 24 ns
t
Turn–Off Delay Time 14 25 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 10 14 nC
Qgs Gate–Source Charge 2.2 nC
Qgd Gate–Drain Charge
VDD = –15 V, ID = –1 A,
VGS = –10 V, R
GEN
= 6 Ω
VDS = –15 V, ID = –4 A,
VGS = –10 V
9 17 ns
2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
is determined by the user's board design.
θCA
VGS = 0 V, IS = –2.1 A (Note 2) –0.8 –1.2 V
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS9435A Rev D1(W)
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FDS9435A
Typical Characteristics
30
VGS = -10V
20
10
, DRAIN CURRENT (A)
D
-I
0
0 1 2 3 4 5 6
-6.0V
-5.0V
-4.5V
-4.0V
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-3.5V
-3.0V
2
1.8
VGS=-4.0V
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 6 12 18 24 30
-4.5V
-5.0V
-6.0V
-ID, DRAIN CURRENT (A)
-7.0V
-8.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -5.3A
VGS = -10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (oC)
0.25
0.2
0.15
0.1
, ON-RESISTANCE (OHM)
TA = 25oC
0.05
DS(ON)
R
0
2 4 6 8 10
TA = 125oC
-VGS, GATE TO SOURCE VOLTAGE (V)
-10V
ID = -2.8A
Figure 3. On-Resistance Variation with
Temperature.
15
VDS = -5V
12
9
6
, DRAIN CURRENT (A)
D
-I
3
0
1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
125oC
25oC
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VGS =0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9435A Rev D1(W)
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P(pk)
SINGLE PULSE
0.05
0.1
D = 0.5
FDS9435A
Typical Characteristics
10
ID = -5.3A
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
-V
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
VDS = -5V
-10V
-15V
800
700
600
500
400
300
CAPACITANCE (pF)
200
100
0
0 5 10 15 20 25 30
C
OSS
C
RSS
-VDS, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
100ms
1
VGS = -10V
SINGLE PULSE
, DRAIN CURRENT (A)
0.1
D
-I
R
= 125oC/W
θ
JA
TA = 25oC
0.01
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
1s
10s
DC
100µs
1ms
10ms
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
f = 1 MHz
VGS = 0 V
SINGLE PULSE
R
= 125°C/W
θ
JA
TA = 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
R
JA(t) = r(t) + RθJA
θ
0.2
R
JA = 125
θ
o
C/W
0.1
0.01
0.02
0.01
t1
t2
TJ - TA = P * R
θ
JA(t)
Duty Cycle, D = t1 / t2
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9435A Rev D1(W)
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS
EnSigna
TM
TM
FACT™
FACT Quiet Series™
STAR*POWER is used under license
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Formative or
In Design
First Production
Full Production
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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