Datasheet fds9431a_f085 Datasheet

FDS9431A_F085

P-Channel 2.5V Specified MOSFET

FDS9431A_F085 P-Channel 2.5V Specified MOSFET

February 2010

tm

General Description

This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.

Applications

• DC/DC converter

• Power management

• Load switch

• Battery protection

D

D

Features

• -3.5 A, -20 V. R

R

= 0.130 Ω @ V

DS(ON)

= 0.180 Ω @ V

DS(ON)

= -4.5 V

GS

= -2.5 V.

GS

• Fast switching speed.

• High density cell design for extremely low R

• High power and current handling capability.

• Qualified to AEC Q101

• RoHS Compliant

5

4

DS(ON)

.

D

D

G

S

SO-8

Absolute Maximum Ratings

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage -20 V
Gate-Source Voltage
Drain Current - Continuous

Power Dissipation for Single Operation

Operating and Storage Junction Temperature Range -55 to +150

S

S

TA=25oC unless otherwise noted

(Note 1a)

- Pulsed -18

(Note 1a)

(Note 1b)
(Note 1c)

6
7

8

-3.5 A

±

2.5

1.2

1.0

3
2
1

8

V

W

°

C

Thermal Characteristics

R

q

JA

R

q

JC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

50
25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS9431A FDS9431A_F085 13’’ 12mm 2500 units

©2010 Fairchild Semiconductor Corporation
FDS9431A_F085 Rev. A

°

C/W

°

C/W

www.fairchildsemi.com1

FDS9431A_F085 P-Channel 2.5V Specified MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

D

BV

D

I

DSS

I

GSSF

DSS

T

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1
Gate-Body Leakage Current,

Forward

I

GSSR

Gate-Body Leakage Current,
Reverse

On Characteristics

V

D
D

R

I

D(on)

g

GS(th)

GS(th)

V

T

DS(on)

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain-Source
On-Resistance

On-State Drain Current VGS = -4.5 V, VDS =-5 V -10 A
Forward Transconductance VDS = -5 V, ID = -3.5 A 6.5 S

(Note 2)

= 0 V, ID = -250 mA

V

GS

ID = -250 mA,Referenced to 25°C

VGS = 8 V, VDS = 0 V 100 nA
VGS = -8 V, VDS = 0 V -100 nA

= VGS, ID = -250 mA

V

DS

ID = -250 mA,Referenced to 25°C
VGS = -4.5 V, ID = -3.5 A

VGS = -2.5 V, ID = -3.0 A
VGS = -4.5 V, ID = -3.5 A
TJ=125°C

-20 V

-28

mV/°C

-0.4 -0.6 -1 V
2

0.110

0.140

0.155

mV/°C

0.130

0.180

0.220

m

A

W
W
W

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 405 pF
Output Capacitance 170 pF
Reverse Transfer Capacitance

= -10 V, VGS = 0 V,

V

DS

f = 1.0 MHz

45 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

g
gs
gd

Turn-On Delay Time 6.5 13 ns
Turn-On Rise Time 20 35 ns
Turn-Off Delay Time 31 50 ns
Turn-Off Fall Time
Total Gate Charge 6 8.5 nC
Gate-Source Charge 0.8 nC
Gate-Drain Charge

(Note 2)

VDD = -5 V, ID = -1 A,
VGS = -4.5 V, R

GEN

= 6

VDS = -5 V, ID = -3.5 A,
VGS = -4.5 V

W

21 35 ns

1.3 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:
1: R

θJA

drain pins. R

Scale 1 : 1 on letter size paper
2: Pulse T est: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current -2.1 A
Drain-Source Diode Forward

VGS = 0 V, IS = -2.1 A

(Note 2)

-0.7 -1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

a) 50° C/W when

is determined by the user's board design.

θCA

mounted on a 1 in
pad of 2 oz. copper.

2

b) 105° C/W when

mounted on a 0.04 in
pad of 2 oz. copper.

c) 125° C/W on a minimum

2

mounting pad.

FDS9431A_F085 Rev. A www.fairchildsemi.com2

T ypical Characteristics

FDS9431A_F085 P-Channel 2.5V Specified MOSFET

10

VGS= -4.5V

8

6

4

, DRAIN CURRENT (A)

D

-I

2

0

012345

-3.5V

-2.5V

-2.0V

-1.5V

, DRAIN TO SOURCE VOLTAGE (V)

-V

DS

2

1.8

V = -2.0V

GS

1.6

1.4

1.2

DS(ON)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.8

0246810

-2.5

-3.0

-3.5

-I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation with

Drain Current and Gate V oltage.

1.6

I = -1.6A

D

V = -4.5V

GS

1.4

1.2

1

DS(ON)

0.8

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE (°C)

J

0.5

0.4

0.3

T = 125°C

0.2

0.1

DS(ON)

R ,ON-RESISTANCE(OHM)

0

12345

-V ,GATE TO SOURCE VOLTAGE (V)

GS

J

25°C

-4.0

-4.5

I = -0.8A

D

Figure 3. On-Resistance Variation

withT emperature.

10

V = -5V

DS

8

6

4

D

-I , DRAIN CURRENT (A)

2

0

01234

-V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

A

25°C

125°C

Figure 5. Transfer Characteristics.

FDS9431A_F085 Rev. A www.fairchildsemi.com3

Figure 4. On-Resistance Variation with

Gate-to-Source V oltage.

10

V = 0V

GS

1

T = 125°C

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001

J

0 0.2 0.4 0.6 0.8 1 1.2 1.4

-V , BODY DIODE FORWARD VOLTAGE (V)

25°C

-55°C

SD

Figure 6. Body Diode Forward V oltage

Variation with Source Current

and Temperature.

T ypical Characteristics (continued)

)

FDS9431A_F085 P-Channel 2.5V Specified MOSFET

5

ID= -1 .6 A

4

3

2

1

, GATE-SOURCE VO LTAGE (V)

GS

-V

0

02468

Qg, GATE CHARGE (nC)

VDS= -5V

-15V

Figure 7. Gate Charge Characteristics.

50

10

RD S( ON ) LIM IT

3

1s

0.5

VGS = -4.5V

V = -4. 5V

GS

SINGLE PULSE

SINGLE PULSE

D

- I , DRAIN CURRENT (A )

0.05

0.01

= 125°C/W

R

R = 135 °C/ W

θJA

JA

θ

A

TA = 25°C

T = 2 5°C

A

0.1 0.3 1 2 5 10 30

- V , DRAIN-SO URCE VOLTAGE (V)

DS

DC

10s

100us

1ms

10ms

100ms

2000

1000

C

C

C

iss

oss

rss

500

200

CA PA CITANCE (pF)

f = 1 MHz

100

V = 0 V

G S

50

0.1 0.2 0.5 1 2 5 10 20

-V , D R AIN TO SOU R CE VOLTAGE (V)

DS

Figure 8. Capacitance Characteristics.

50

40

30

20

POWER (W)

10

0

0.001 0.01 0.1 1 10 100 1000

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

= 125oC/W

θ

JA

= 25oC

T

A

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

1

D = 0.5

0.5

0.2

0.2

0.1

0. 0 5

0. 0 2

0. 0 1

0.005

r(t), NORMALIZED EFFECTIVE

0.002

TR ANSI ENT THER MAL RESISTANC E

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

0. 1

0.05

0.02

0. 0 1
S i n g l e P u l s e

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.

FDS9431A_F085 Rev. A www.fairchildsemi.com4

t , TI ME (s e c)

1

Power Dissipation.

R (t) = r(t) * R

JA

θ

R = 125 °C/ W

JA

θ

P(pk

t

1

t

2

T - T = P * R (t)

J

A

D u t y C y c l e, D = t /t

JA

θ

JA

θ

2

1

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FDS9431A_F085 P-Channel 2.5V Specified MOSFET

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FDS9431A_F085 Rev. A www.fairchildsemi.com5

Rev. I47