Datasheet fds8984_f085 Datasheet

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FDS8984_F085 N-Channel PowerTrench

Fabruary 2010

FDS8984_F085

N-Channel PowerTrench® MOSFET

30V, 7A, 23mΩ

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

and fast switching speed.

DS(ON)

SO-8

Pin 1

SO-8

Features

 Max r

 Low gate charge

 100% R

Qualified to AEC Q101



 RoHS Compliant

= 23mΩ, V

DS(on)

= 30mΩ, V

DS(on)

tested

= 10V, ID = 7A

= 4.5V, ID = 6A

MOSFET

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current Continuous (Note 1a) 7 A

Pulsed 30 A

Single Pulse Avalache Energy (Note 2) 32 mJ

Power Dissipation for Single Operation 1.6 W

Derate above 25°C 13 mW/°C

Operating and Storage Temperature -55 to 150 °C

TA = 25°C unless otherwise noted

Thermal Characteristics

θJA

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS8984 FDS8984_F085 SO-8 330mm 12mm 2500 units

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FDS8984_F085 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

DSS

∆BV

DSS

∆T

DSS

GSS

On Characteristics

GS(th)

∆V

GS(th)

∆T

DS(on)

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V

Breakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain Current

ID = 250µA, referenced to 25°C

= 24V

= 0V

= 125°C 250

23 mV/°C

Gate to Source Leakage Current VGS = ±20V,VDS = 0V ±100 nA

(Note 3)

Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 1.2 1.7 2.5 V

Gate to Source Threshold Voltage Temperature Coefficient

Drain to Source On Resistance

ID = 250µA, referenced to 25°C

= 10V, ID = 7A 19 23

= 4.5V, ID = 6A 24 30

= 10V, ID = 7A,

= 125°C

- 4.3 mV/°C

26 32

Dynamic Characteristics

iss

oss

rss

Input Capacitance

Output Capacitance 100 135 pF

Reverse Transfer Capacitance 65 100 pF

= 15V, VGS = 0V,

f = 1.0MHz

475 635 pF

Gate Resistance f = 1MHz 0.9 1.6 Ω

µA

mΩ

MOSFET

Switching Characteristics

d(on)

d(off)

Turn-On Delay Time

Rise Time 918ns

Turn-Off Delay Time 42 68 ns

Fall Time 21 34 ns

Total Gate Charge

Gate to Source Gate Charge 1.5 nC

Gate to Drain “Miller” Charge 2.0 nC

(Note 3)

= 15V, ID = 7A

= 10V, R

= 15V, VGS = 10V,

= 7A

= 15V, VGS = 5V,

= 7A

510ns

= 33Ω

9.2 13 nC

5.0 7 nC

Drain-Source Diode Characteristics

= 7A 0.9 1.25 V

Notes:

1: R

θJA

the drain pins. R

Source to Drain Diode Voltage

Diode Reverse Recovery Time

Diode Reverse Recovery Charge 20 nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

a) 78°C/W when mounted on a 0.5in pad of 2 oz copper

is determined by the user’s board design.

θCA

= 2.1A 0.8 1.0 V

= 7A, di/dt = 100A/µs

b) 125°C/W when mounted on a 0.02 in pad of oz copper

c) 135°C/W when mounted on a minimun pad

33 ns

Scale 1 : 1 on letter size paper

2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, V 3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%.

FDS8984_F085 Rev. A

= 10V.

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FDS8984_F085 N-Channel PowerTrench

Typical Characteristics T

, DRAIN CURRENT (A)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VGS=10V

VGS=5.0V

VGS=4.5V

VGS=4.0V

PULSE DURATION =80µS DUTY CYCLE =0.5% MAX

= 25°C unless otherwise noted

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1.

1.6

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

-80 -40 0 40 80 120 160

On Region Characteristics Figure 2.

ID = 7A V

= 10V

TJ, JUNCTION TEMPERATURE (oC)

VGS=3.5V

VGS=3.0V

3.0

PULSE DURATION =80µS

2.5

VGS=3.0V

, NORMALIZED

DS(ON)

DRAIN-SOURCE ON-RESISTANCE

2.0

1.5

1.0

0.5

VGS=3.5V

5 1015202530

DUTY CYCLE =0.5% MAX

VGS=5.0V

VGS=4.5V

VGS=10V

VGS=4.0V

ID, DRAIN CURRENT (A)

On-Resistance vs Drain Current and

Gate Voltage

(mOHM)

, DRAIN TO

DS(on)

SOURCE ON-RESISTANCE

246810

ID = 7A

= 25

, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX

TJ = 125oC

MOSFET

Figure 3.

PULSE DURATION =80µS DUTY CYCLE =0.5% MAX

= 5V

, DRAIN CURRENT (A)

1234

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5.

FDS8984_F085 Rev. A

On Resistance vs Temperature Figure 4.

VGS = 0V

TJ = 150OC

TJ = 25OC

TJ = - 55OC

Transfer Characteristics Figure 6.

0.1

0.01

, REVERSE DRAIN CURRENT (A)

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Source to Drain Diode Forward Voltage

On-Resistance vs Gate to Source

Votlage

TJ = 150

TJ = -55

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25

vs Source Current

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FDS8984_F085 N-Channel PowerTrench

Typical Characteristics T

= 25°C unless otherwise noted

VDD = 10V

= 20V

, GATE TO SOURCE VOLTAGE(V)

0246810

Qg, GATE CHARGE(nC)

Figure 7. Gate Charge Characteri

STARTING TJ = 25OC

, AVALANCHE CURRENT (A)

STARTING TJ = 125OC

0.01 0.1 1 10

tAV, TIME IN AVALANCHE (mS)

Figure 9. Unclamped Inductive Switching

Capability

700

VDD = 15V

600

500

400

300

f = 1MHz V

= 0V

OSS

ISS

200

CAPACITANCE (pF)

100

0.1 1 10

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

stics Figure 8. Capacitance vs Drain to Source Voltage

VGS=10V

VGS=4.5V

, DRAIN CURRENT (A)

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

Figure 10. Maximum Continuous Drain Current vs

Ambient Temperature

MOSFET

100

OPERATION IN THIS AREA MAY BE LIMITED BY r

, DRAIN CURRENT (A)

0.1

SINGLE PULSE

= MAX RATED

TA = 25oC

0.01

0.1 1 10 100

DS(on)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe Operating Area

FDS8984_F085 Rev. A

10us

100us

1ms

10ms

100ms

3000

1000

100

VGS=10V

TA = 25oC

FOR TEMPERATURES

ABOVE 25

CURRENT AS FOLLOWS:

I = I

C DERATE PEAK

150 TA–

------------------------

125

, PEAK TRANSIENT POWER (W)

(PK)

SINGLE PULSE

10-510-410-310-210-110010110210

t, PULSE WIDTH (s)

Figure 12. Single Pulse Maximum Power

Dissipation

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FDS8984_F085 N-Channel PowerTrench

Typical Characteristics T

DUTY CYCLE - DESCENDING ORDER

D = 0.5

0.2

0.1

0.05

θJA

0.02

0.01

Impedance Z

Normalized Thermal

1E-3

1E-4

-5

-4

SINGLE PULSE

Figure 13. Transient Thermal Response Curve

= 25°C unless otherwise noted

-3

-2

-1

t, RECTANGULAR PULSE DURATION(s)

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

1/t2

x R

+ T

θJA

MOSFET

FDS8984_F085 Rev. A

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The following includes registered and unregistered trademarks and service marks, owned b y Fairchild Semiconductor and /or its globa l subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED Dual Cool™ EcoSPARK EfficentMax™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FETBench™ FlashWriter FPS™ F-PFS™

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ Sync-Lock™ ®*

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UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™

FDS8984_F085 N-Channel PowerTrench

MOSFET

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As used herein:

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2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

expected to result in a significant injury of the user.

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

FDS8984_F085 Rev. A

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time withou t notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

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Rev. I47