Page 1
tm
FDS8984
N-Channel PowerTrench® MOSFET
30V, 7A, 23mΩ
FDS8984 N-Channel PowerTrench
May 2007
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(ON)
D2
D
D2
D
D1
D
D1
D
SO-8
Pin 1
SO-8
S1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current Continuous (Note 1a) 7 A
Pulsed 30 A
Single Pulse Avalache Energy (Note 2) 32 mJ
Power Dissipation for Single Operation 1.6 W
Derate above 25°C 13 mW/°C
Operating and Storage Temperature -55 to 150 °C
G2
S2
G
G1
S
S
S
= 25°C unless otherwise noted
A
Features
Max r
Max r
Low gate charge
100% R
RoHS Compliant
= 23mΩ, V
DS(on)
= 30mΩ, V
DS(on)
tested
G
5
6
7
8
Q2
Q1
= 10V, ID = 7A
GS
= 4.5V, ID = 6A
GS
4
3
2
1
®
MOSFET
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS8984 FDS8984 SO-8 330mm 12mm 2500 units
©2007 Fairchild Semiconductor Corporation
FDS8984 Rev. A1
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FDS8984 N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250µA, referenced to
25°C
V
= 24V
DS
V
= 0V
GS
= 125°C 250
T
J
23 mV/°C
1
Gate to Source Leakage Current VGS = ±20V,VDS = 0V ±100 nA
(Note 3)
Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 1.2 1.7 2.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
ID = 250µA, referenced to
25°C
= 10V, ID = 7A 19 23
V
GS
V
= 4.5V, ID = 6A 24 30
GS
= 10V, ID = 7A,
V
GS
T
= 125°C
J
- 4.3 mV/°C
26 32
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance 100 135 pF
Reverse Transfer Capacitance 65 100 pF
= 15V, VGS = 0V,
V
DS
f = 1.0MHz
Gate Resistance f = 1MHz 0.9 1.6 Ω
475 635 pF
µA
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 918ns
Turn-Off Delay Time 42 68 ns
Fall Time 21 34 ns
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge 1.5 nC
Gate to Drain “Miller” Charge 2.0 nC
(Note 3)
= 15V, ID = 7A
V
DD
V
= 10V, R
GS
V
= 15V, VGS = 10V,
DS
I
= 7A
D
V
= 15V, VGS = 5V,
DS
I
= 7A
D
GS
510ns
= 33Ω
9.2 13 nC
5.0 7 nC
Drain-Source Diode Characteristics
I
= 7A 0.9 1.25 V
V
SD
t
rr
Q
rr
Notes:
1: R
θJA
the drain pins. R
Source to Drain Diode Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge 20 nC
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 78°C/W when
mounted on a 0.5in
pad of 2 oz copper
is determined by the user’s board design.
θCA
2
SD
= 2.1A 0.8 1.0 V
I
SD
I
= 7A, di/dt = 100A/µs
F
b) 125°C/W when
mounted on a 0.02 in
pad of oz copper
2
c) 135°C/W when
mounted on a
minimun pad
33 ns
Scale 1 : 1 on letter size paper
2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, V
3: Pulse Test:Pulse Width <300µs, Duty Cycle <2%.
FDS8984 Rev. A1
GS
= 10V.
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FDS8984 N-Channel PowerTrench
Typical Characteristics T
30
20
10
, DRAIN CURRENT (A)
D
I
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS=10V
VGS=5.0V
VGS=4.5V
VGS=4.0V
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
= 25°C unless otherwise noted
J
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1.
1.6
1.4
1.2
1.0
NORMALIZED
0.8
0.6
DRAIN TO SOURCE ON-RESISTANCE
-80 -40 0 40 80 120 160
On Region Characteristics Figure 2.
ID = 7A
V
= 10V
GS
TJ, JUNCTION TEMPERATURE (oC)
VGS=3.5V
VGS=3.0V
3.0
PULSE DURATION =80µS
2.5
VGS=3.0V
, NORMALIZED
DS(ON)
R
DRAIN-SOURCE ON-RESISTANCE
2.0
1.5
1.0
0.5
VGS=3.5V
5 1015202530
DUTY CYCLE =0.5% MAX
VGS=5.0V
VGS=4.5V
VGS=10V
VGS=4.0V
ID, DRAIN CURRENT (A)
On-Resistance vs Drain Current and
Gate Voltage
60
55
50
(mOHM)
45
40
35
, DRAIN TO
30
DS(on)
R
25
20
15
SOURCE ON-RESISTANCE
246810
ID = 7A
o
T
= 25
C
J
V
, GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
TJ = 125oC
®
MOSFET
Figure 3.
30
PULSE DURATION =80µS
DUTY CYCLE =0.5% MAX
25
V
DD
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
1234
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5.
FDS8984 Rev. A1
On Resistance vs Temperature Figure 4.
= 5V
TJ = 150OC
TJ = 25OC
TJ = - 55OC
Transfer Characteristics Figure 6.
On-Resistance vs Gate to Source
Votlage
30
VGS = 0V
10
o
TJ = 150
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
1E-3
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
C
TJ = -55
TJ = 25
o
C
Source to Drain Diode Forward Voltage
vs Source Current
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o
C
Page 4
FDS8984 N-Channel PowerTrench
Typical Characteristics T
= 25°C unless otherwise noted
J
10
8
6
4
VDD = 10V
V
= 20V
DD
2
, GATE TO SOURCE VOLTAGE(V)
GS
0
V
0246810
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteri
20
10
STARTING TJ = 25OC
, AVALANCHE CURRENT (A)
STARTING TJ = 125OC
AS
I
1
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (mS)
Figure 9. Unclamped Inductive Switching
Capability
700
VDD = 15V
600
500
400
300
f = 1MHz
= 0V
V
GS
C
OSS
C
ISS
200
CAPACITANCE (pF)
100
0.1 1 10
C
RSS
VDS, DRAIN TO SOURCE VOLTAGE (V)
stics Figure 8. Capacitance vs Drain to Source Voltage
8
7
6
VGS=10V
5
4
VGS=4.5V
, DRAIN CURRENT (A)
D
I
3
2
1
0
20
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
30
®
MOSFET
100
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
, DRAIN CURRENT (A)
0.1
D
I
SINGLE PULSE
= MAX RATED
T
J
TA = 25oC
0.01
0.1 1 10 100
DS(on)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
FDS8984 Rev. A1
10us
100us
1ms
10ms
100ms
1s
DC
3000
1000
100
VGS=10V
TA = 25oC
FOR TEMPERATURES
o
ABOVE 25
CURRENT AS FOLLOWS:
I = I
25
C DERATE PEAK
150 TA–
------------------------
125
10
, PEAK TRANSIENT POWER (W)
(PK)
P
SINGLE PULSE
1
10-510-410-310-210-110010110210
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum Power
Dissipation
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3
Page 5
FDS8984 N-Channel PowerTrench
Typical Characteristics T
2
1
DUTY CYCLE - DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
θJA
0.02
0.01
0.01
Impedance Z
Normalized Thermal
1E-3
1E-4
-5
10
-4
10
SINGLE PULSE
10
Figure 13. Transient Thermal Response Curve
= 25°C unless otherwise noted
J
-3
-2
10
-1
10
t, RECTANGULAR PULSE DURATION(s)
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
0
10
P
DM
t
1
t
2
1/t2
x R
+ T
θJA
θJA
A
1
10
2
10
3
10
®
MOSFET
FDS8984 Rev. A1
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FDS8984 N-Channel PowerTrench
®
MOSFET
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE
OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE
RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,
SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided in
the labeling, can be reasonably expected to result in a significant
injury of the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In Design
Preliminary First Production This datasheet contains preliminary data; supplementary data will
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Obsolete
Not In Production
2. A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
Definition
This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.
be published at a later date. Fairchild Semiconductor reserves the
right to make changes at any time without notice to improve
design.
Semiconductor reserves the right to make changes at any time
without notice to improve design.
This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor.The datasheet is printed
for reference information only.
Rev. I 27
FDS8984 Rev. A1
6
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