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FDS8960C
D
Dual N & P-Channel PowerTrench® MOSFET
l N
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D2
D
D2
D
D1
D
D1
D
SO-8
Pin 1
SO-8
S1
Absolute Maximum Ratings T
G2
S2
G
G1
S
S
S
= 25°C unless otherwise noted
A
Symbol Parameter Q1 Q2 Units
V
Drain-Source Voltage 35 –35 V
DSS
V
DS(Avalanche)
V
GSS
ID Drain Current - Continuous (Note 1a) 7 –5 A
- Pulsed 20 –20
PD Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
TJ, T
Drain-Source Avalanche Voltage (maximum) (Note 3) 40 –40 V
Gate-Source Voltage
Operating and Storage Junction Temperature Range –55 to +150
STG
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 40
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS8960C FDS8960C 13” 12mm 2500 units
©2005 Fairchild Semiconductor Corporation
FDS8960C Rev C1(W)
Features
• Q1: N-Channel
7.0A, 35V R
R
• Q2: P-Channel
–5A, –35V R
R
• Fast switching speed
• RoHS compliant
5
6
7
8
±20 ±25
(Note 1b)
(Note 1c)
P-
= 0.024Ω @ VGS = 10V
DS(on)
= 0.032Ω @ VGS = 4.5V
DS(on)
h
nn
= 0.053Ω @ VGS = –10V
DS(on)
= 0.087Ω @ VGS = –4.5V
DS(on)
l P
w
rTr
n
Q2
Q1
4
3
2
1
V
1
0.9
°C
°C/W
°C/W
www.fairchildsemi.com
h
M
FET
®
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Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Type Min Typ Max Units
Drain-Source Avalanche Ratings
E
Drain-Source Avalanche
AS
I
Drain-Source Avalanche
AS
Energy (Single Pulse)
Current
VDD = 35 V, ID = 7 A, L = 1 mH Q1 24.5 mJ
= –35 V, ID =–5 A, L = 1 mH Q2 12.5 mJ
V
DD
Q1
Q2
7
–5
A
Off Characteristics
Q1
BV
Drain-Source Breakdown
DSS
ΔBVDSS
ΔT
I
Zero Gate Voltage Drain
DSS
I
GSSF
I
GSSR
I
GSSR
I
GSSF
Voltage
Breakdown Voltage
Temperature Coefficient
J
Current
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = –20 V, VDS = 0 V
Gate-Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = –25 V, VDS = 0 V
= 0 V, ID = 250 μA
V
GS
= 0 V, ID = –250 μA
V
GS
= 250 μA, Referenced to 25°C
I
D
= –250 µA, Referenced to 25°C
I
D
VDS = 28 V, VGS = 0 V
= –28 V, VGS = 0 V
V
DS
Q2
–35
Q1
Q2
Q1
Q2
Q1
Q2
35
V
31
–40
1
–100 nA
–100 nA
–1
mV/°C
μA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
ΔVGS(th)
ΔTJ
R
DS(on)
gFS Forward Transconductance VDS = 5 V, ID = 7 A
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
= VGS, ID = 250 μA
V
DS
= VGS, ID = –250 µA
V
DS
I
= 250 μA, Referenced to 25°C
D
= –250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 7 A
= 4.5 V, ID = 6 A
V
GS
= 10 V, ID = 7 A, TJ = 125°C
V
GS
= –10 V, ID = –5 A
V
GS
= –4.5 V, ID = –4 A
V
GS
= –10 V, ID = –5 A, TJ = 125°C
V
GS
= –5 V, ID =–5 A
V
DS
Q1
Q2 1 –1 2 –1.8 3 –3
Q1
Q2
Q1 20
Q2 44
Q1
Q2
–5 4
25
29
70
61
23 9 S
24
32
37
53
87
79
V
mV/°C
mΩ
Dynamic Characteristics
C
Input Capacitance Q1
iss
C
Output Capacitance Q1
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance f = 1.0 MHz
Q1
= 15 V, VGS = 0 V, f = 1.0 MHz
V
DS
Q2
= –15 V, VGS = 0 V, f = 1.0 MHz
V
DS
Q2
Q2
Q1
Q2
Q1
Q2
570
540
126
113
52
60
2 6
pF
pF
pF
Ω
D
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h
®
M
FET
FDS8960C Rev C1(W) www.fairchildsemi.com
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Electrical Characteristics (continued) T
Symbol
Parameter
Test Conditions
= 25°C unless otherwise noted
A
Type Min Typ Max Units
Switching Characteristics (Note 2)
t
Turn-On Delay Time
d(on)
tr Turn-On Rise Time
t
Turn-Off Delay Time
d(off)
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q1
= 15 V, ID = 1 A,
V
DD
= 10V, R
V
GS
Q2
= –15 V, ID = -1 A,
V
DD
= –10V, R
V
GS
Q1
= 15 V, ID = 7 A, VGS = 5 V
V
DS
Q2
= –15 V, ID = –5 A,VGS = –5 V
V
DS
GEN
GEN
= 6 Ω
= 6 Ω
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
12
5
16
23
20
3 5 6
5.5
5.7
1.8
1.8
1.8 2 nC
Drain–Source Diode Characteristics
IS Maximum Continuous Drain-Source Diode Forward Current Q1
VSD Drain-Source Diode Forward
trr Diode Reverse Recovery
Qrr Diode Reverse Recovery
Notes:
1. R
θJA
the drain pins. R
Voltage
Time
Charge
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
VGS = 0 V, IS = 1.3 A (Note 2)
VGS = 0 V, IS = –1.3 A (Note 2)
Q1
= 7 A, diF/dt = 100 A/µs
I
F
Q2
= -5 A, diF/dt = 100 A/µs
I
F
is determined by the user's board design.
θCA
Q2
Q1
Q2
Q1
Q2
Q1
Q2
1.3
0.8
–0.8
20
10 5 nC
–1.3
–1.2
17
16
22
10
29
37
32
10
7.7 8 nC
1.2
ns
ns
ns
ns
nC
A
V
nS
D
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FET
a) 78°C/W when
mounted on a
2
0.5 in
pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%
3. BV(avalanche) Single-Pulse rating is guaranteed by design if device is operated within the UIS SOA boundary of the device.
FDS8960C Rev C1(W) www.fairchildsemi.com
b) 125°C/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°C/W when mounted on a
minimum pad.
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Typical Characteristics: Q1 (N-Channel)
FD
20
VGS = 10V
6.0V
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
00.511.52
4.5V
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
3.5V
3.0V
2.6
2.4
2.2
2
VGS = 3.5V
1.8
1.6
, NORMALIZED
1.4
DS(ON)
R
1.2
DRAIN-SOURCE ON-RESISTANCE
1
0.8
0 4 8121620
4.0V
4.5V
, DRAIN CURRENT (A)
I
D
5.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
ID = 7A
= 10V
V
GS
1.6
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
Figure 3. On-Resistance Variation with
Temperature.
0.065
0.055
0.045
0.035
, ON-RESISTANCE (OHM)
0.025
DS(ON)
R
0.015
TA = 25oC
2345678910
V
GS
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
6.0V
10V
ID = 3.5A
D
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FET
30
VDS = 5V
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
1.52.53.54.5
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = -55oC 25oC
125oC
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
V
BODY DIODE FORWARD VOLTAGE (V)
SD,
-55oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8960C Rev C1(W) www.fairchildsemi.com
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Typical Characteristics: Q1 (N-Channel)
FD
10
ID = 7A VDS = 10V
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
V
0
024681012
Qg, GATE CHARGE (nC)
15V
20V
800
700
600
500
400
300
CAPACITANCE (pF)
200
100
0
0 5 10 15 20 25 30 35
C
C
rss
C
iss
oss
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A)
I
VGS = 10V
D
0.1
SINGLE PULSE
R
= 135oC/W
JA
θ
= 25oC
T
0.01
A
0.1 1 10 100
V
, DRAIN-SOURCE VOLTAGE (V)
DS
DC
10s
1s
100ms
10ms
1ms
100μs
50
SINGLE PULSE
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
R
f = 1 MHz
V
= 135°C/W
JA
θ
= 25°C
T
A
GS
= 0 V
D
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FET
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
40
SINGLE PULSE
R
= 135°C/W
θ
JA
T
= 25°C
30
20
10
I(pk), PEAK TRANSIENT CURRENT (A)
0
0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
A
Figure 11. Single Pulse Maximum Peak
Current
FDS8960C Rev C1(W) www.fairchildsemi.com
100
TJ = 25oC
10
I(AS), AVALANCHE CURRENT (A )
1
0.01 0.1 1 10
t
, TIME IN AVANCHE(ms)
AV
Figure 12. Unclamped Inductive Switching
Capability
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Typical Characteristics: Q2 (P-Channel)
FD
20
VGS = -10V
16
12
8
, DRAIN CURRENT (A)
D
-I
4
0
0 0.5 1 1.5 2 2.5 3 3.5 4
-6.0V
, DRAIN TO SOURCE VOLTAGE (V)
-V
DS
-4.5V
-3.5V
-3.0V
3.4
3.2
3
VGS = - 3.5V
2.8
2.6
2.4
2.2
2
, NORMALIZED
1.8
1.6
DS(ON)
R
1.4
1.2
DRAIN-SOURCE ON-RESISTANCE
1
0.8
0 5 10 15 20
-4.0V
-4.5V
, DRAIN CURRENT (A)
-I
D
-5.0V
-6.0V
Figure 13. On-Region Characteristics. Figure 14. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -5A
1.5
= - 10V
V
GS
1.4
1.3
1.2
1.1
, NORMALIZED
1
0.9
DS(ON)
R
0.8
0.7
DRAIN-SOURCE ON-RESISTANCE
0.6
-50-250 255075100125150
, JUNCTION TEMPERATURE (oC)
T
J
Figure 15. On-Resistance Variation with
Temperature.
0.2
0.18
0.16
0.14
0.12
0.1
0.08
, ON-RESISTANCE (OHM)
0.06
DS(ON)
R
TA = 25oC
0.04
0.02
246810
TA = 125oC
, GATE TO SOURCE VOLTAGE (V)
-V
GS
Figure 16. On-Resistance Variation with
Gate-to-Source Voltage.
-10V
ID = -2.5A
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M
FET
20
VDS = -5V
16
12
8
, DRAIN CURRENT (A)
D
-I
4
0
1.5 2 2.5 3 3.5 4 4.5 5
-V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
125oC
25oC
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-V
BODY DIODE FORWARD VOLTAGE (V)
SD,
-55oC
Figure 17. Transfer Characteristics. Figure 18. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8960C Rev C1(W) www.fairchildsemi.com
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Typical Characteristics: Q2 (P-Channel)
FD
10
ID = -5A VDS = -10V
8
6
4
2
, GATE-SOURCE VOLTAGE (V)
GS
-V
0
024681012
, GATE CHARGE (nC)
Q
g
-15V
-20V
800
700
600
500
400
300
CAPACITANCE (pF)
200
100
C
RSS
0
0 5 10 15 20 25 30 35
C
ISS
C
OSS
, DRAIN TO SOURCE VOLTAGE (V)
-V
DS
Figure 19. Gate Charge Characteristics. Figure 20. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A)
D
-I
VGS = -10V
0.1
SINGLE PULSE
R
= 135oC/W
JA
θ
T
= 25oC
0.01
A
0.1 1 10 100
, DRAIN-SOURCE VOLTAGE (V)
-V
DS
1s
10s
DC
1ms
10ms
100ms
100μs
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
SINGLE PULSE
R
Figure 21. Maximum Safe Operating Area. Figure 22. Single Pulse Maximum
Power Dissipation.
f = 1 MHz
V
GS
= 135°C/W
JA
θ
= 25°C
T
A
= 0 V
D
l N
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nn
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M
FET
30
20
10
I(pk), PEAK TRANSIENT CURRENT(A)
0
0.001 0.01 0.1 1 10 100 1000
t
, TIME (sec)
1
SINGLE PULSE
R
= 135°C/W
θ
JA
T
= 25°C
A
Figure 23. Single Pulse Maximum Peak
Current
FDS8960C Rev C1(W) www.fairchildsemi.com
10
TJ= 25oC
I(AS), AVALANCHE CURRENT(A)
1
0.01 0.1 1 10
t
, TIME IN AVANCHE(ms)
AV
Figure 24. Unclamped Inductive Switching
Capability
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Typical Characteristics
FD
1
D = 0.5
R
(t) = r(t) * R
θ
0.2
0.1
0.1
0.01
r(t), NORMALIZED EFFECTIVE
0.001
TRANSIENT THERMAL RESISTANCE
0.05
0.02
0.01
SINGLE PULSE
0.0001 0.001 0.01 0.1 1 10 100 1000
, TIME (sec)
t
1
JA
R
θ
JA
P(pk
- TA = P * R
T
J
Duty Cycle, D = t
= 135oC/W
t
1
t
2
θ
θ
JA
(t)
JA
/ t
1
2
D
l N
Ph
nn
l P
Figure 25. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
w
rTr
n
h
®
M
FET
FDS8960C Rev C1(W) www.fairchildsemi.com
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