Datasheet FDS8958B Datasheet (Fairchild)

FDS8958B

Dual N & P-Channel PowerTrench® MOSFET

Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ

FDS8958B Dual N & P-Channel PowerTrench

December 2008

Features

Q1: N-Channel

 Max r  Max r

Q2: P-Channel

 Max r  Max r  HBM ESD protection level > 3.5 kV (Note 3)

 RoHS Compliant

= 26 mΩ at VGS = 10 V, ID = 6.4 A

DS(on)

= 39 mΩ at VGS = 4.5 V, ID = 5.2 A

DS(on)

= 51 mΩ at VGS = -10 V, ID = -4.5 A

DS(on)

= 80 mΩ at VGS = -4.5 V, ID = -3.3 A

DS(on)

D2

D1

Pin 1

S1

SO-8

G1

S2

G2

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench tailored to minimize on-state resistance and yet maintain superior switching performance.

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

®

process that has been especially

Application

 DC-DC Conversion  BLU and motor drive inverter

D2

D1

5

Q2

6

Q1Q2Q1Q2Q1

7

8

G2

4

S2

3

G1

2

S1

1

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

I

D

P

D

E

AS

, T

T

J

STG

Drain to Source Voltage 30 -30 V Gate to Source Voltage ±20 ±25 V Drain Current - Continuous TA = 25 °C 6.4 -4.5

- Pulsed 30 -30 Power Dissipation for Dual Operation 2.0

T Single Pulse Avalanche Energy (Note 4) 18 5 mJ Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

C

A A

= 25 °C (Note 1a) 1.6 = 25 °C (Note 1b) 0.9

A

WPower Dissipation for Single Operation T

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 40 Thermal Resistance, Junction to Ambient (Note 1a) 78

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS8958B FDS8958B SO-8 13 ” 12 mm 2500 units

FDS8958B Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

∆BV ∆T

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current

Gate to Source Leakage Current

= 250 µA, VGS = 0 V

D

I

= -250 µA, VGS = 0 V

D

ID = 250 µA, referenced to 25 °C I

= -250 µA, referenced to 25 °C

D

V

= 24 V, V

DS

V

= -24 V, V

DS

V

= ±20 V, V

GS

V

= ±25 V, V

GS

DS DS

= 0 V = 0 V

Q1Q230

-30

Q1 Q2

V

24

-21

-1

±100

±10nAµA

mV/°C

1

I

On Characteristics

V

GS(th)

∆V ∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 µA

GS

V

= VDS, ID = -250 µA

GS

ID = 250 µA, referenced to 25 °C I

= -250 µA, referenced to 25 °C

D

= 10 V, ID = 6.4 A

V

GS

V

= 4.5 V, ID = 5.2 A

GS

V

= 10 V, ID = 6.4A, TJ = 125 °C

GS

V

= -10 V, ID = -4.5 A

GS

V

= -4.5 V, ID = -3.3 A

GS

V

= -10 V , ID = -4.5 A, TJ = 125 °C

GS

V

= 5 V, ID = 6.4 A

DD

V

= -5 V, ID = -4.5 A

DD

Q1Q21.0

-1.0

Q1 Q2

Q1

Q2

Q1 Q2

2.0

-1.9

-6 5

21 29 31

38 60 53

20 10

3.0

-3.0 mV/°C

26 39 39

51 80 72

µA

V

mΩ

S

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Q1

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2

= -15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

405 570

115

10080150

75

55

2.4

4.4

540 760

100 155

pF

Ω

Q1 V

= 15 V, ID = 6.4 A,

DD

V

= 10 V, R

GS

GEN

Q2

= -15 V, ID = -4.5 A,

V

DD

V

= -10 V, R

GS

V

= 10 V

GS

V

= -10 V

GS

V

= 4.5 V

GS

V

= -4.5 V

GS

= 6 Ω

GEN

Q1 VDD = 15 V, I

= 6.4 A

D

Q2

= -15 V,

V

DD

I

= -4.5 A

D

Q1 Q2

4.3

6.01012

2.0

6.01012 12

17

22 30

2.0

7.01014

8.31412 19

4.1

5.8

7.0

9.6

1.3

1.9

1.7

3.6

ns

nC

FDS8958B Dual N & P-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

0.8

-0.8

17 20

6 8

1.2

-1.2 30

36 12

16

is determined by

θCA

V

= 0 V, IS = 1.3 A (Note 2)

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. UIL condition: Starting TJ = 25 °C, L = 1 mH, I Starting TJ = 25 °C, L = 1 mH, I

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

a) 78 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 6 A, VDD = 27 V, VGS = 10 V . (Q1)

AS

= -4 A, VDD = -27 V, VGS = -10 V. (Q2)

AS

GS

V

= 0 V, IS = -1.3 A (Note 2)Q1Q2

GS

Q1 I

= 6.4 A, di/dt = 100 A/µs

F

Q2 I

= -4.5 A, di/dt = 100 A/µs

F

Q1 Q2

is guaranteed by design while R

θJC

b) 135 °C/W when mounted on a minimun pad

V

ns

nC

®

MOSFET

FDS8958B Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

30

24

18

12

DRAIN CURRENT (A)

,

D

6

I

0

0 0.5 1.0 1.5 2.0 2.5 3.0

Figure 1.

1.8

ID = 6.4 A V

1.6

GS

PULSE DURA TION = 80 µs DUTY CYCLE = 0.5% MAX

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

On Region Characteristics Figure 2.

= 10 V

1.4

1.2

1.0

NORMALIZED

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

0.4

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

VGS = 10 V VGS = 6 V VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

o

C)

= 25 °C unless otherwise noted

J

3.0

V

= 3.5 V

GS

2.5

2.0

1.5

NORMALIZED

1.0

PULSE DURATION = 80 µs

DRAIN TO SOURCE ON-RESISTANCE

DUTY CYCLE = 0.5% MAX

0.5 0 6 12 18 24 30

I

, DRAIN CURRENT (A)

D

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

75

(mΩ)

60

45

DRAIN TO

,

DS(on)

r

30

SOURCE ON-RESISTANCE

15

TJ = 25 oC

246810

V

, GATE TO SOURCE VOL TA G E (V)

GS

VGS = 4 V

V

= 4.5 V

GS

VGS = 6 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

ID = 3.2 A

TJ = 125 oC

V

= 10 V

GS

®

MOSFET

Fi g ure 3 . Norm a lize d On Re sista n ce

vs Junction Temperature

30

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

25

V

= 5 V

DS

20

Figure 4.

30

V

10

On-Resistanc e vs Gate to

Source Voltage

= 0 V

GS

TJ = 125 oC

1

15

10

, DRAIN CURRENT (A)

D

I

5

0

123456

TJ = 125 oC

TJ = 25 oC

TJ = -55 oC

VGS, GATE TO SO UR C E VO LTAGE (V)

Figure 5. Transfer Characteristics

TJ = 25 oC

0.1

, REVERSE DRAIN CURRENT (A)

S

I

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Dr ai n Diode

TJ = -55 oC

Forward Voltage vs Source Current

FDS8958B Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

10

ID = 6.4 A

8

V

= 10 V

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

0246810

Figure 7.

9 8 7

6 5

4 3

2

, AVALANCHE CURRENT (A)

AS

I

1

0.001 0.01 0.1 1 10 100

DD

VDD = 15 V

VDD = 20 V

Qg, GATE CHARGE (nC)

Gate Charge Characteristics

TJ = 25 oC

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

= 25 °C unless otherwise noted

J

1000

100

CAPACITANCE (pF)

f = 1 MHz

= 0 V

V

GS

10

0.1 1 10 30

VDS, DRAIN TO SOURCE VOL TA G E (V)

Figure 8.

Capacitance vs Drain

to Source Voltage

100

THIS AREA IS LIMITED BY r

10

1

, DRAIN CURRENT (A)

0.1

D

I

0.01

0.01 0.1 1 10 100

DS(on)

SINGLE PULSE

= MAX RA TED

T

J

R

θJA

= 25

T

A

VDS, DRAIN to SOURCE VOLTAGE (V)

= 135

o

C

iss

C

oss

C

rss

®

MOSFET

0.1 ms

1 ms 10 ms 100 ms

o

C/W

C

1 s 10 s

DC

Figure 9.

Unc l a m p e d I ndu c t i v e

Switching Capability

Figure 10.

Operating Area

Forward Bias S af e

500

100

10

, PEAK TRANSIENT POWER (W)

1

(PK)

P

0.5

-4

10

-3

10

VGS = 10 V

SINGLE PULSE R

T

-2

10

-1

10

t, PULSE WIDTH (sec)

110

Figure 11. Single Pulse Maximum Power Dissipation

= 135 oC/W

θ

JA

= 25 oC

A

100 1000

FDS8958B Dual N & P-Channel PowerTrench

Typical Characteristics (Q1 N-Channel) T

2 1

DUTY CYCLE-DESCENDING ORDER

JA

θ

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.001

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE R

= 135 oC/W

θ

JA

-4

10

-3

10

Figure 12.

-2

10

t, RECTANGULAR PULSE DURATION (sec)

Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

110

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

100 1000

A

®

MOSFET

FDS8958B Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

30

24

18

12

, DRAIN CURRENT (A)

D

-I

6

0

Figure 15. On- Region Charact er is ti cs

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

VGS = -10 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

VGS = -6 V

VGS = -4.5 V

VGS = -4 V

VGS = -3.5 V

0.0 0.5 1.0 1.5 2.0 2.5 3.0

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

ID = -4.5 A V

= -10 V

GS

T

, JUNCTION TEMPERATURE (

J

o

C)

= 25 °C unless otherwise noted

J

4.5

V

= -3.5 V

4.0

GS

3.5

3.0

2.5

2.0

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 6 12 18 24 30

-I

D

Figure 16. Normalized on-Resistance vs Drain

Current and Gate Voltage

200

160

(mΩ)

120

DRAIN TO

,

80

DS(on)

r

40

SOURCE ON-RESISTANCE

0

246810

-V

, GATE TO S OURCE VOLTAG E (V )

GS

VGS = -4 V

PULSE DURATION = 80 µs DUTY CYCLE = 0.5%MAX

, DRAIN CURRENT (A)

PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX

V

= -4.5 V

GS

TJ = 125 oC

TJ = 25 oC

V

= -6 V

GS

VGS = -10 V

ID = -2.3 A

®

MOSFET

Figure 17. Normalized On-Resistance

vs Junction Temperature

30

PULSE DURA TION = 80 µs DUTY CYCLE = 0.5% MAX

25

V

= -5 V

DS

20

15

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

10

, DRAIN CURRENT (A)

D

-I

5

0

123456

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 19. Transfer Characteristics

Figure 18. On-Resistance vs Gate to

Source Voltage

30

V

= 0 V

GS

10

TJ = 125 oC

TJ = 25 oC

0.1

, REVERSE DRAIN CURRENT (A)

S

-I

0.01

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

-VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = -55 oC

Figure 20. Source to Drain Diode

Forward Voltag e vs Source Current

FDS8958B Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

10

ID = -4.5 A

8

VDD = -10 V

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

-V

0

03691215

Qg, GATE CHARGE (nC)

Figure 21. Gate Charge Characteristics

8 7

6 5

4 3

2

, AVALANCHE CURRENT (A)

AS

-I

1

0.01 0.1 1 10

TJ = 125 oC

tAV, TIME IN AVALANCHE (ms)

V

= -20 V

DD

TJ = 25 oC

VDD = -15 V

= 25 °C unless otherwise noted

J

2000

1000

100

CAPACITANCE (pF)

f = 1 MHz

= 0 V

V

GS

30

0.1 1 10 30

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 22. Capacitance vs Drain

to Source Volt age

-2

10

V

= 0V

GS

-3

10

-4

10

-5

10

-6

10

-7

10

-8

GATE LEAKAGE CURRENT(A)

10

,

g

-I

-9

10

0 5 10 15 20 25 30 35

TJ = 125oC

,

-V

GATE TO SOURCE VOLTAGE(V)

GS

TJ = 25oC

C

iss

C

oss

C

rss

®

MOSFET

Figure 23. Unclamped Inductive

Switching Capability

100

THIS AREA IS LIMITED BY r

10

1

, DRAIN CURRENT (A)

0.1

D

-I

0.01

0.01 0.1 1 10 100

DS(on)

SINGLE PULSE T

= MAX RATED

J

o

= 135

= 25

C/W

o

C

R

θJA

T

A

-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 25. Forwa rd Bias S afe

Operating Area

0.1 ms

1 ms 10 ms 100 ms

1 s

10 s

DC

200 100

10

PEAK TRANSIENT POWER (W)

,

)

1

PK

(

P

0.5 10-410-310-210

Figure 26. Single Pulse Maximum Power

Figure 24. Ig vs Vgs

VGS = -10 V

SINGLE PULSE R

θ

JA

T

A

-1

t, PULSE WIDTH (sec)

110

Dissipation

= 135 oC/W

= 25 oC

100 1000

FDS8958B Dual N & P-Channel PowerTrench

Typical Characteristics (Q2 P-Channel) T

2

DUTY CYCLE-DESCENDING ORDER

1

D = 0.5

JA

θ

Z

0.1

IMPEDANCE,

0.01

NORMALIZED THERMAL

0.002

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

= 135 oC/W

R

θ

JA

-4

10

-3

10

-2

10

t, RECTANGU LAR PULSE DURATION (sec)

Figure 27. Junction-to-Ambient Transient Thermal Response Curve

= 25 °C unless otherwise noted

J

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

110

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

100 1000

®

MOSFET

TRADEMARKS

tm

®

tm

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconducto r and/or its global subsidiar ies, and is not intended to be an exhaustive list of all such trademarks.

Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK EfficentMax™ EZSWITCH™ *

™

Fairchild Fairchild Semiconductor FACT Quiet Series™ FACT FAST FastvCore™ FlashWriter FPS™ F-PFS™

* EZSWITCH™ and FlashWriter

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPRO VE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

®

*

®

are trademarks of System General Corporation, used under license by Fairchild Semiconductor .

®

FRFET Global Power Resource Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC OPTOPLANAR

PDP SPM™ Power-SPM™ PowerTrench

®

PowerXS™

SM

Programmable Active Droop™

®

QFET QS™ Quiet Series™ RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™

®

SPM STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™

®

The Power Franchise

®

TinyBoost™ TinyBuck™ TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™

UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™

®

XS™

FDS8958B Dual N & P-Channel PowerTrench

®

MOSFET

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or ( b) support o r sustain l ife , and (c) whose failure to perform when properly used in accord ance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Farichild’s Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support

Counterfeiting of semiconductor parts is a growing proble m in the industry. All manufactures of semiconduct or products are experiencing counterfei ting of their parts. Customers who inadvertently purchase counterfeit parts exper ie nce many proble ms such a s loss of b rand repu tation , sub sta ndard p erforman ce, f ailed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselve s and our cu st omer s fro m the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild part s either directl y from Fairchild or fr om Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Farichild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and enco urage our customers t o do their part in stopping this practice by buying direct or from a uthorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

.

2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. S pecifications may change in any manner without notice.

Datasheet contains preliminary data; supplementa ry dat a will be publ ished at a la ter date. Fairchild Semiconductor reserves the right to make cha nges at a ny time wit hout not ice to improve design.

Datasheet contains final specifications. Fair child Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I37