Page 1
FDS8958A_F085 Dual N & P-Channel PowerTrench
February 2010
FDS8958A_F085
Dual N & P-Channel PowerTrench
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
D2
D
D2
D
D1
D
D1
D
S1
G2
S2
G
G1
S
S
S
= 25°C unless otherwise noted
A
SO-8
SO-8
Pin 1
Absolute Maximum Ratings T
MOSFET
Features
• Q1: N-Channel
• Q2: P-Channel
• Fast switching speed
• High power and handling capability in a widely
•
•
7.0A, 30V R
-5A, -30V R
used surface mount package
Qualified to AEC Q101
RoHS Compliant
5
6
7
8
= 0.028Ω @ VGS = 10V
DS(on)
R
= 0.040Ω @ VGS = 4.5V
DS(on)
= 0.052Ω @ VGS = -10V
DS(on)
R
= 0.080Ω @ VGS = -4.5V
DS(on)
Q2
Q1
tm
4
3
2
1
®
MOSFET
Symbol Parameter Q1 Q2 Units
V
Drain-Source Voltage 30 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current - Continuous
- Pulsed 20 -20
PD Power Dissipation for Dual Operation 2 2
Power Dissipation for Single Operation
EAS Single Pulse Avalanche Energy
TJ, T
STG
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
7 -5
(Note 1a)
1.6 1.6
(Note 1c)
(Note 3)
54 13 mJ
±20 ±20
0.9 0.9
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS8958A FDS8958A_F085 13” 12mm 2500 units
©2010 Fairchild Semiconductor Corporation
FDS8958A_F085 Rev. A
(Note 1a)
(Note 1)
78
40
www.fairchildsemi.com1
V
A
W
°C
°C/W
°C/W
Page 2
FDS8958A_F085 Dual N & P-Channel PowerTrench
Electrical Characteristics T
Symbol
Parameter Test Conditions Type Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
DSS
∆BV
∆T
I
Zero Gate Voltage Drain
DSS
Drain-Source Breakdown
Voltage
Breakdown Voltage
DSS
Temperature Coefficient
J
Current
I
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA
GSSF
I
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V All -100 nA
GSSR
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
VDS = VGS, ID = 250 µA
VDS = VGS, ID = -250 µA
∆V
∆TJ
R
DS(on)
Gate Threshold Voltage
GS(th)
Temperature Coefficient
Static Drain-Source
On-Resistance
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V, ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V, ID = 6 A
VGS = -10 V, ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V, ID = -4 A
I
On-State Drain Current VGS = 10 V, VDS = 5 V
D(on)
VGS = -10 V, VDS = -5 V
gFS Forward Transconductance VDS = 5 V, ID = 7 A
VDS = -5 V, ID =-5 A
Q1
30
Q2
-30
Q1
Q2
Q1
25
-23
1
Q2
Q1
Q2 1 -1
Q1
Q2
1.9
-1.7 3 -3
-4.5
4.5
Q1 19
27
24
Q2 42
57
65
Q1
20
Q2
-20
Q1
Q2
25
10
V
A
Dynamic Characteristics
C
Input Capacitance Q1
iss
Q1
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
C
Output Capacitance Q1
oss
C
Reverse Transfer Capacitance
rss
Q2
VDS = -15 V, VGS = 0 V, f = 1.0 MHz
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz
Q2
Q2
Q1
Q2
Q1
Q2
575
528
145
132
65
70
2.1
6.0
mV/°C
-1
mV/°C
28
42
40
52
78
80
S
pF
pF
pF
µA
V
mΩ
Ω
®
MOSFET
FDS
8958A_F085 Rev. A www.fairchildsemi.com2
Page 3
FDS8958A_F085 Dual N & P-Channel PowerTrench
Electrical Characteristics
Symbol
Parameter
(continued)
T
Test Conditions
= 25°C unless otherwise noted
A
Type
Min
Typ Max Units
Switching Characteristics (Note 2)
t
Turn-On Delay Time
d(on)
tr Turn-On Rise Time
t
Turn-Off Delay Time
d(off)
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current Q1
Q1
VDD = 15 V, ID = 1 A,
VGS = 10V, R
GEN
= 6 Ω
Q2
VDD = -15 V, ID = -1 A,
VGS = -10V, R
GEN
= 6 Ω
Q1
VDS = 15 V, ID = 7 A, VGS = 10 V
Q2
VDS = -15 V, ID = -5 A,VGS = -10 V
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
7
5
13
23
14
3
9 6 17
11.4
9.6
1.7
2.2
2.1
1.7
1.3
Q2
I
S
M
VSD Drain-Source Diode Forward
trr Diode Reverse Recovery
Qrr Diode Reverse Recovery
Notes:
1. R
θJA
the drain pins. R
Maximum Plused Drain-Source Diode Forward Current (Note 2) Q1
20
Q2
Voltage
VGS = 0 V, IS = -1.3 A
Q1
VGS = 0 V, IS = 1.3 A
Time
IF = 7 A, diF/dt = 100 A/µs
Q2
Charge
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
IF = -5 A, diF/dt = 100 A/µs
is determined by the user's board design.
θCA
(Note 2)
(Note 2)
Q1
Q2
Q1
Q2
Q1
Q2
0.75
-0.88
19
19
9
6
16
14
10
24
37
25
16
13
nC
nC
-1.3 A
-20
1.2
-1.2 V
nS
nC
ns
ns
ns
ns
nC
A
®
MOSFET
a) 78°/W when
mounted on a
0.5 in2 pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1).
Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2).
FDS8958A_F085 Rev. A www.fairchildsemi.com3
b) 125°/W when
mounted on a .02 in2
pad of 2 oz copper
c) 135°/W when mounted on a
minimum pad.
Page 4
Typical Characteristics: Q1 (N-Channel)
FDS8958A_F085 Dual N & P-Channel PowerTrench
20
VGS = 10.0V
16
6.0V
12
8
, DRAIN CURRENT (A)
D
I
4
0
0 0.5 1 1.5 2
4.0V
4.5V
VDS, DRAIN-SOURCE VOLTAGE (V)
3.5V
3.0V
2.2
1.8
VGS = 3.5V
1.4
, NORMALIZED
DS(ON)
1
R
DRAIN-SOURCE ON-RESISTANCE
0.6
0 4 8 12 16 20
4.0
4.5V
ID, DRAIN CURRENT (A)
5.0
6.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 7A
VGS = 10.0V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
0.08
0.07
0.06
0.05
0.04
, ON-RESISTANCE (OHM)
0.03
TA = 25oC
DS(ON)
R
0.02
0.01
2 4 6 8 10
TA = 125oC
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10.0V
ID = 3.5A
®
MOSFET
20
VDS = 5V
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
1.5 2 2.5 3 3.5 4
VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125oC
-55oC
25oC
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
FDS
8958A_F085 Rev. A www.fairchildsemi.com4
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
VSD, BODY DIODE FORWARD VOLTAGE (V)
with Source Current and Temperature.
Page 5
Typical Characteristics: Q1 (N-Channel)
FDS8958A_F085 Dual N & P-Channel PowerTrench
10
ID = 7A
8
6
4
, GATE-SOURCE VOLTAGE (V)
2
GS
V
0
0 2 4 6 8 10 12
Qg, GATE CHARGE (nC)
VDS = 10V
15V
20V
800
600
C
iss
400
C
CAPACITANCE (pF)
200
C
rss
0
0 5 10 15 20
oss
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
100
R
LIMIT
DS(ON)
10
1
, DRAIN CURRENT (A)
D
I
0.01
VGS = 10V
SINGLE PULSE
0.1
R
= 135oC/W
θ
JA
TA = 25oC
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
1s
10s
DC
100ms
10ms
1ms
100µs
10
, AVALANCHE CURRENT (A)
AS
I
1
0.01 0.1 1 10 100
Tj=125
tAV, TIME IN AVALANCHE (mS)
Tj=25
Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching
Capability Figure
f = 1MHz
VGS = 0 V
®
MOSFET
50
40
30
20
10
P(pk), PEAK TRANSIENT POWER (W)
0
0.001 0.01 0.1 1 10 100 1000
Figure 11. Single Pulse Maximum Power Dissipation.
FDS
8958A_F085 Rev. A www.fairchildsemi.com5
t1, TIME (sec)
SINGLE PULSE
R
= 135°C/W
JA
θ
TA = 25°C
Page 6
Typical Characteristics: Q2 (P-Channel)
FDS8958A_F085 Dual N & P-Channel PowerTrench
30
VGS = -10V
20
10
, DRAIN CURRENT (A)
D
-I
0
0 1 2 3 4 5 6
-6.0V
-5.0V
-4.5V
-4.0V
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-3.5V
-3.0V
2
1.8
VGS=-4.0V
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 6 12 18 24 30
-4.5V
-5.0V
-6.0V
-ID, DRAIN CURRENT (A)
-7.0V
-8.0V
Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -5A
VGS = -10V
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 14. On-Resistance Variation with
Temperature.
0.25
0.2
0.15
0.1
, ON-RESISTANCE (OHM)
TA = 25oC
0.05
DS(ON)
R
0
2 4 6 8 10
TA = 125oC
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. On-Resistance Variation with
Gate-to-Source Voltage.
-10V
ID = -2.5A
®
MOSFET
15
VDS = -5V
12
9
6
, DRAIN CURRENT (A)
D
-I
3
0
1 1.5 2 2.5 3 3.5 4 4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55oC
125oC
Figure 16. Transfer Characteristics. Figure 17. Body Diode Forward Voltage Variation
FDS
8958A_F085 Rev. A www.fairchildsemi.com6
25oC
100
VGS =0V
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
0.001
S
-I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
TA = 125oC
25oC
-55oC
-VSD, BODY DIODE FORWARD VOLTAGE (V)
with Source Current and Temperature.
Page 7
Typical Characteristics: Q2 (P-Channel)
1
D = 0.5
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
0.1
0.05
0.02
0.01
SINGLE PULSE
t1, TIME (sec)
Figure 23. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
R θJA(t) = r(t) * R θA
R θJA = 135 °C/W
P(pk)
P(pk)
t
1
t1
t
2
t
2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t
FDS8958A_F085 Dual N & P-Channel PowerTrench
2
®
MOSFET
FDS
8958A_F085 Rev. A www.fairchildsemi.com7
Page 8
tm
®
tm
tm
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intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
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EfficentMax™
Fairchild
Fairchild Semiconductor
FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
FPS™
F-PFS™
®
®
®
®
®
®
*
®
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
®
PDP SPM™
Power-SPM™
SM
PowerTrench
PowerXS™
Programmable Active Droop™
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QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®*
®
®
™
®
The Power Franchise
®
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TINYOPTO™
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TRUECURRENT™*
®
μSerDes™
®
UHC
Ultra FRFET™
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VCX™
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®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDS8958A_F085 Dual N & P-Channel PowerTrench
®
MOSFET
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
expected to result in a significant injury of the user.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
FDS
8958A_F085 Rev. A www.fairchildsemi.com8
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